FK14KM-9

FK14KM-9
Mfr. #:
FK14KM-9
Fabricante:
Renesas Electronics Corporation
Descripción:
Trans MOSFET N-CH 450V 14A 3-Pin(3+Tab) TO-220FN Tube
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FK14KM-9 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
FK14K, FK14, FK1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 450V 14A 3-Pin(3+Tab) TO-220FN Tube
***ponent Stockers USA
14 A 450 V 0.65 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***ical
Trans MOSFET N-CH 450V 10A 3-Pin(3+Tab) TO-220FI
***r Electronics
Power Field-Effect Transistor, 10A I(D), 450V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N CH 450V 10A TO220; Transistor Type:MOSFET; Transistor Polarity:N; Typ Voltage Vds:450V; Cont Current Id:10A; On State Resistance:0.68ohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:5V; Case Style:TO-220FI; Termination Type:Through Hole; Power Dissipation:2W; Transistor Case Style:TO-220FI
***ure Electronics
Single N-Channel 400 V 0.3 Ohms Flange Mount Power Mosfet - TO-247AC
*** Stop Electro
Power Field-Effect Transistor, 16A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***ment14 APAC
N CHANNEL MOSFET, 400V, 16A, TO-247; Tra; N CHANNEL MOSFET, 400V, 16A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:400V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; MSL:-
***nell
MOSFET, N, 400V, 16A, TO-247AC; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:400V; Current, Id Cont:16A; Resistance, Rds On:0.3ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247AC; Termination Type:Through Hole; Current, Idm Pulse:64A; Lead Spacing:5.45mm; No. of Pins:3; Power Dissipation:190W; Power, Pd:180W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:0.65°C/W; Transistors, No. of:1; Voltage, Vds Max:400V
***ure Electronics
Single N-Channel 500 V 0.28 Ohms Flange Mount Power Mosfet - TO-220-3
***ical
Trans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-220AB
***nell
MOSFET, N, 500V, 17A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.28ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Di
***nsix Microsemi
Power Field-Effect Transistor, 16A I(D), 500V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***emi
N-Channel Power MOSFET, UniFETTM, 500 V, 18 A, 265 mΩ, TO-220F
*** Source Electronics
Trans MOSFET N-CH 500V 18A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 500V 18A TO-220F
***enic
500V 18A 58W 265m´Î@10V9A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
***ment14 APAC
MOSFET, N-CH, 500V, 18A, TO-220F-3; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Source Voltage Vds:500V; On Resistance
***r Electronics
Power Field-Effect Transistor, 18A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N, TO-220F; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:500V; Current, Id Cont:18A; Resistance, Rds On:0.265ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220F; Termination Type:Through Hole; Current, Idm Pulse:72A; No. of Pins:3; Power Dissipation:38.5W; Voltage, Vds Max:500V; Voltage, Vgs th Max:5V
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, UniFETTM, 500 V, 16 A, 380 mΩ, TO-220F
***Yang
Trans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
*** Stop Electro
Power Field-Effect Transistor, 16A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:500V; On Resistance Rds(on):380mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:38.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:16A; Package / Case:TO-220F; Power Dissipation Pd:38.5W; Pulse Current Idm:64A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***ical
Trans MOSFET N-CH 560V 16A 3-Pin(3+Tab) TO-220FP
***nell
MOSFET, N, 500V, TO-220F; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:560V; Current, Id Cont:16A; Resistance, Rds On:0.28ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-220F; Termination Type:Through Hole; Current, Idm Pulse:48.0A; Power, Pd:34.0W; Voltage, Vds:500V; Voltage, Vds Max:500V
***ment14 APAC
MOSFET, N-CH, 560V, 16A, TO220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:560V; On Resistance Rds(on):0.25ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:160W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; MSL:-; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C
***ineon
Replacement for 500V CoolMOS C3 is 500V CoolMOS CE >> Click & go to 500V CoolMOS CE | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
Parte # Mfg. Descripción Valores Precio
FK14KM-9
DISTI # C1S620200427874
Renesas Electronics CorporationTrans MOSFET N-CH 450V 14A 3-Pin(3+Tab) TO-220FN Tube
RoHS: Not Compliant
10
  • 10:$15.8000
Imagen Parte # Descripción
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OMO.#: OMO-FK14X5R1A106MR006

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Mfr.#: FK14C0G2E182JN006

OMO.#: OMO-FK14C0G2E182JN006-TDK

CAP CER 1800PF 250V C0G RADIAL
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Mfr.#: FK14X5R1A155KN006

OMO.#: OMO-FK14X5R1A155KN006-TDK

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Mfr.#: FK14X7R2A332KN006

OMO.#: OMO-FK14X7R2A332KN006-TDK

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Mfr.#: FK14C0G2A332JN006

OMO.#: OMO-FK14C0G2A332JN006-TDK

CAP CER 3300PF 100V C0G RADIAL
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Mfr.#: FK14X5R1E105KN006

OMO.#: OMO-FK14X5R1E105KN006-TDK

CAP CER 1UF 25V X5R RADIAL
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Mfr.#: FK14X7S2A154K

OMO.#: OMO-FK14X7S2A154K-TDK

Multilayer Ceramic Capacitors MLCC - Leaded 0.15uF 100volts X7S +/-10%
FK14X7R1E155KR020

Mfr.#: FK14X7R1E155KR020

OMO.#: OMO-FK14X7R1E155KR020-1190

Multilayer Ceramic Capacitors MLCC - Leaded 1.5uF 25V X7R 10%
FK14X5R1C105KN020

Mfr.#: FK14X5R1C105KN020

OMO.#: OMO-FK14X5R1C105KN020-1190

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Mfr.#: FK14X7R2E472KN020

OMO.#: OMO-FK14X7R2E472KN020-TDK

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Disponibilidad
Valores:
Available
En orden:
2000
Ingrese la cantidad:
El precio actual de FK14KM-9 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
23,70 US$
23,70 US$
10
22,52 US$
225,15 US$
100
21,33 US$
2 133,00 US$
500
20,14 US$
10 072,50 US$
1000
18,96 US$
18 960,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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