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IRFH7911TRPBF

IRFH7911TRPBF
Mfr. #:
IRFH7911TRPBF
Fabricante:
Infineon Technologies
Descripción:
MOSFET 2N-CH 30V 13A/28A PQFN
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRFH7911TRPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
FET: matrices
Serie
HEXFETR
embalaje
Tape & Reel (TR)
Estilo de montaje
SMD / SMT
Paquete-Estuche
18-PowerVQFN
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
2 Channel
Paquete de dispositivo de proveedor
PQFN (5x6)
Configuración
Doble
Tipo FET
2 N-Channel (Dual)
Potencia máxima
2.4W, 3.4W
Tipo transistor
2 N-Channel
Drenaje-a-fuente-voltaje-Vdss
30V
Entrada-Capacitancia-Ciss-Vds
1060pF @ 15V
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
13A, 28A
Rds-On-Max-Id-Vgs
8.6 mOhm @ 12A, 10V
Vgs-th-Max-Id
2.35V @ 25μA
Puerta-Carga-Qg-Vgs
12nC @ 4.5V
Disipación de potencia Pd
2.4 W 3.4 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
5.9 ns 14 ns
Hora de levantarse
15 ns 35 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
13 A 28 A
Vds-Drain-Source-Breakdown-Voltage
30 V 30 V
Vgs-th-Gate-Source-Threshold-Voltage
2.35 V
Resistencia a la fuente de desagüe de Rds
8.6 mOhms 3 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
12 ns 28 ns
Tiempo de retardo de encendido típico
12 ns 22 ns
Qg-Gate-Charge
8.3 nC 34 nC
Transconductancia directa-Mín.
17 S 106 S
Tags
IRFH791, IRFH79, IRFH7, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
30V Dual N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm Lead Free package
***ure Electronics
Dual N-Channel 30 V 8.6 mOhm 34 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***ical
Trans MOSFET N-CH 30V 13A/28A 18-Pin PQFN EP T/R
***ied Electronics & Automation
MOSFET, DUAL N-CHANNEL, 30V, POL, PQFN5X6
*** Source Electronics
MOSFET 2N-CH 30V 13A/28A PQFN
***i-Key
MOSFET N-CH 30V DUAL PQFN
***ark
DUAL N CH MOSFET, 30V, PQFN-18; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.2mohm; Rds(on) Test Voltage Vgs:10V ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; 100% Rg tested; Low Profile (less than 0.9 mm); Dual N-Channel MOSFET; Control and Synchronous MOSFETs in one package; Low Charge Control MOSFET; Low Rdson Synchronous MOSFET; Intrinsic Schottky diode with Low Forward Voltage on Q2
***nell
MOSFET,NN CH,30V,PQFN56; Module Configuration:Dual; Continuous Drain Current Id:13A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0072ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.35V; Power Dissipation Pd:2.4W; Transistor Case Style:QFN; No. of Pins:18; SVHC:No SVHC (15-Dec-2010); Operating Temperature Range:-55°C to +150°C
***ment14 APAC
MOSFET,NN CH,30V,PQFN56; Module Configuration:Dual; Continuous Drain Current Id:13A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0072ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.35V; Power Dissipation Pd:2.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:18; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Power Dissipation Pd:2.4W
Parte # Mfg. Descripción Valores Precio
IRFH7911TRPBF
DISTI # V72:2272_13889764		Infineon Technologies AGTrans MOSFET N-CH 30V 13A/28A 18-Pin PQFN EP T/R
RoHS: Compliant		375
  • 250:$1.4135
  • 100:$1.4288
  • 25:$1.7130
  • 10:$1.7326
  • 1:$1.9747
IRFH7911TRPBF
DISTI # IRFH7911TRPBF-ND		Infineon Technologies AGMOSFET 2N-CH 30V 13A/28A PQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Limited Supply - Call
  • 4000:$1.2511
IRFH7911TRPBF
DISTI # 27502137		Infineon Technologies AGTrans MOSFET N-CH 30V 13A/28A 18-Pin PQFN EP T/R
RoHS: Compliant		4000
  • 4000:$1.0368
IRFH7911TRPBF
DISTI # 26196155		Infineon Technologies AGTrans MOSFET N-CH 30V 13A/28A 18-Pin PQFN EP T/R
RoHS: Compliant		375
  • 250:$1.4135
  • 100:$1.4288
  • 25:$1.7130
  • 10:$1.7326
  • 7:$1.9747
IRFH7911TRPBF
DISTI # IRFH7911TRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 13A/28A 18-Pin PQFN EP T/R (Alt: IRFH7911TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Asia - 0
    IRFH7911TRPBF
    DISTI # IRFH7911TRPBF    		Infineon Technologies AGTrans MOSFET N-CH 30V 13A/28A 18-Pin PQFN EP T/R - Tape and Reel (Alt: IRFH7911TRPBF)
    RoHS: Compliant
    Min Qty: 4000
    Container: Reel    		Americas - 0
    • 4000:$0.9709
    • 8000:$0.9359
    • 16000:$0.9019
    • 24000:$0.8709
    • 40000:$0.8559
    IRFH7911TRPBF
    DISTI # SP001577920    		Infineon Technologies AGTrans MOSFET N-CH 30V 13A/28A 18-Pin PQFN EP T/R (Alt: SP001577920)
    RoHS: Compliant
    Min Qty: 4000
    Container: Tape and Reel    		Europe - 0
    • 4000:€1.1999
    • 8000:€0.9999
    • 16000:€0.9229
    • 24000:€0.8569
    • 40000:€0.7999
    IRFH7911TRPBF
    DISTI # 70019702    		Infineon Technologies AGMOSFET,DUAL N-CHANNEL,30V,POL,PQFN5X6
    RoHS: Compliant    		0
    • 4000:$2.3900
    • 8000:$2.3420
    • 20000:$2.2710
    • 40000:$2.1750
    • 100000:$2.0320
    IRFH7911TRPBF
    DISTI # 942-IRFH7911TRPBF    		Infineon Technologies AGMOSFET 30V DUAL N-CH HEXFET 8.6mOhms 8.3nC
    RoHS: Compliant    		8011
    • 1:$2.4300
    • 10:$2.0700
    • 100:$1.6600
    • 500:$1.4500
    • 1000:$1.2000
    • 4000:$1.0800
    IRFH7911TRPBF
    DISTI # C1S322000604629    		Infineon Technologies AGTrans MOSFET N-CH 30V 13A/28A 18-Pin PQFN EP T/R
    RoHS: Compliant    		4000
    • 4000:$1.1100
    IRFH7911TRPBF
    DISTI # C1S322000576733    		Infineon Technologies AGTrans MOSFET N-CH 30V 13A/28A 18-Pin PQFN EP T/R
    RoHS: Compliant    		375
    • 250:$1.4135
    • 100:$1.4288
    • 25:$1.7130
    • 10:$1.7326
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    Disponibilidad
    Valores:
    Available
    En orden:
    1000
    Ingrese la cantidad:
    El precio actual de IRFH7911TRPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,28 US$
    1,28 US$
    10
    1,22 US$
    12,20 US$
    100
    1,16 US$
    115,55 US$
    500
    1,09 US$
    545,65 US$
    1000
    1,03 US$
    1 027,10 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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