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AS4C16M32SC-7TINTR

AS4C16M32SC-7TINTR
Mfr. #:
AS4C16M32SC-7TINTR
Fabricante:
Alliance Memory
Descripción:
DRAM 512Mb 16Mx32 3.3V 143MHz SDRAM I-Temp
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
AS4C16M32SC-7TINTR Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
AS4C16M32SC-7TINTR más información
Atributo del producto
Valor de atributo
Fabricante:
Memoria de la Alianza
Categoria de producto:
DRACMA
RoHS:
Y
Escribe:
SDRAM
Ancho del bus de datos:
32 bit
Organización:
16 M x 32
Paquete / Caja:
TSOP-86
Tamaño de la memoria:
512 Mbit
Frecuencia máxima de reloj:
143 MHz
Voltaje de suministro - Máx:
3.6 V
Voltaje de suministro - Min:
3 V
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 85 C
Serie:
AS4C16M32SC
Embalaje:
Carrete
Marca:
Memoria de la Alianza
Estilo de montaje:
SMD / SMT
Sensible a la humedad:
Yes
Tipo de producto:
DRACMA
Cantidad de paquete de fábrica:
1000
Subcategoría:
Memoria y almacenamiento de datos
Tags
AS4C16M3, AS4C16M, AS4C16, AS4C1, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
AS4C Series SDRAM
Alliance Memory AS4C Series SDRAM is high-speed CMOS synchronous DRAM containing 64, 128, or 256Mbits. They are internally configured as 4 Banks of 1M, 2M, or 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented, accesses start at selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.Learn More
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OMO.#: OMO-AS4C16M32MSA-6BIN

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Mfr.#: AS4C16M32MS-7BCN

OMO.#: OMO-AS4C16M32MS-7BCN

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Mfr.#: AS4C16M32MD1-5BINTR

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Mfr.#: AS4C16M32MD1-5BCNTR

OMO.#: OMO-AS4C16M32MD1-5BCNTR-ALLIANCE-MEMORY

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Mfr.#: AS4C16M32SC-7TIN

OMO.#: OMO-AS4C16M32SC-7TIN-ALLIANCE-MEMORY

 512MB SDR 16M x 32 3.3V 54PIN TSOP II 133 MHZ
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Mfr.#: AS4C16M32MS-7BCNTR

OMO.#: OMO-AS4C16M32MS-7BCNTR-ALLIANCE-MEMORY

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Mfr.#: AS4C16M32MSA-6BINTR

OMO.#: OMO-AS4C16M32MSA-6BINTR-ALLIANCE-MEMORY

 IC DRAM 512M PARALLEL 90FBGA
Disponibilidad
Valores:
Available
En orden:
5500
Ingrese la cantidad:
El precio actual de AS4C16M32SC-7TINTR es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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