SPA20N60CFDXKSA1

Mfr. #:: SPA20N60CFDXKSA1
Fabricante:: Infineon Technologies
Descripción:: MOSFET N-CH 600V 20.7A TO220-3
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: SPA20N60CFDXKSA1 Ficha de datos
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Tags: SPA20N60CF, SPA20N60C, SPA20N60, SPA20N6, SPA20N, SPA20, SPA2, SPA

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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SPA20N60CFDXKSA1 Descripción

***ical: Trans MOSFET N-CH 600V 20.7A 3-Pin(3+Tab) TO-220FP Tube

***et: Trans MOSFET N-CH 600V 20.7A 3-Pin TO-220FP Tube

***i-Key: MOSFET N-CH 600V 20.7A TO220-3

***an P&S: 600V,20.7A,N channel Power MOSFET

***ark: MOSFET, N, 600V, TO-220F; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:20.7A; Resistance, Rds On:0.22ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220F; ;RoHS Compliant: Yes

***nell: MOSFET, N, 600V, TO-220F; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:20.7A; Resistance, Rds On:0.22ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220F; Termination Type:Through Hole; Current, Idm Pulse:52A; Power, Pd:35W; Voltage, Vds:600V; Voltage, Vds Max:600V

***ment14 APAC: MOSFET, N, 600V, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:20.7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):220mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:35W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:20.7A; Package / Case:TO-220F; Power Dissipation Pd:35W; Power Dissipation Pd:35W; Pulse Current Idm:52A; Termination Type:Through Hole; Voltage Vds:600V; Voltage Vds Typ:600V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***ineon: CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation. | Summary of Features: Fourth series of CoolMOS market entry in 2004; Fast Body Diode, Q rr 1/10th of C3 series, V th 4 V, g fs high, R g low; Specific for phase-shift ZVS and DC-AC power applications | Benefits: Improved efficiency; More efficient, more compact, lighter and cooler; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness | Target Applications: Solar; Adapter; PC power; Consumer; Server; Telecom

Market price

Parte #	Mfg.	Descripción	Valores	Precio
SPA20N60CFDXKSA1 DISTI # V99:2348_06377674	Infineon Technologies AG	Trans MOSFET N-CH 600V 20.7A 3-Pin(3+Tab) TO-220FP Tube RoHS: Compliant	500	500:$2.8620 250:$3.2210 100:$3.4260 50:$3.6330 25:$3.8540 10:$4.0690 1:$5.3108
SPA20N60CFDXKSA1 DISTI # SPA20N60CFDXKSA1-ND	Infineon Technologies AG	MOSFET N-CH 600V 20.7A TO220-3 RoHS: Compliant Min Qty: 500 Container: Tube	Limited Supply - Call	500:$3.2022
SPA20N60CFDXKSA1 DISTI # 33731686	Infineon Technologies AG	Trans MOSFET N-CH 600V 20.7A 3-Pin(3+Tab) TO-220FP Tube RoHS: Compliant	500	3:$5.3108
SPA20N60CFDXK DISTI # SPA20N60CFDXKSA1	Infineon Technologies AG	Trans MOSFET N-CH 600V 20.7A 3-Pin(3+Tab) TO-220FP - Rail/Tube (Alt: SPA20N60CFDXKSA1) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 0	3000:$2.2900 5000:$2.2900 2000:$2.3900 1000:$2.4900 500:$2.5900
SPA20N60CFDXKSA1 DISTI # 62M0122	Infineon Technologies AG	MOSFET, N CHANNEL, 600V, 20.7A, TO-220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:20.7A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.19ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes	0	500:$3.0800 250:$3.4300 100:$3.6200 50:$3.8000 25:$3.9900 10:$4.1700 1:$4.9100
SPA20N60CFD DISTI # 726-SPA20N60CFD	Infineon Technologies AG	MOSFET N-Ch 600V 20.7A TO220FP CoolMOS CFD RoHS: Compliant	0	1:$4.8600 10:$4.1300 100:$3.5800 250:$3.4000 500:$3.0500
SPA20N60CFDXKSA1 DISTI # N/A	Infineon Technologies AG	MOSFET HIGH POWER_LEGACY	0
SPA20N60CFDXKSA1	Infineon Technologies AG	Power Field-Effect Transistor, 20.7A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB RoHS: Compliant	290	1000:$2.2100 500:$2.3300 100:$2.4200 25:$2.5300 1:$2.7200
SPA20N60CFDXKSA1 DISTI # 1471775	Infineon Technologies AG	MOSFET, N, 600V, TO-220F	0	500:£2.3400 250:£2.6200 100:£2.7600 10:£3.1800 1:£4.1600
SPA20N60CFDXKSA1 DISTI # 1471775	Infineon Technologies AG	MOSFET, N, 600V, TO-220F RoHS: Compliant	0	500:$4.6000 250:$5.1200 100:$5.4000 10:$6.2200 1:$7.3200

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Disponibilidad

Valores:: Available
En orden:: 4000
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El precio actual de SPA20N60CFDXKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~3,24 US$~~; ~~3,24 US$~~

10: ~~3,08 US$~~; ~~30,78 US$~~

100: ~~2,92 US$~~; ~~291,60 US$~~

500: ~~2,75 US$~~; ~~1 377,00 US$~~

1000: ~~2,59 US$~~; ~~2 592,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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SPA20N60CFDXKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes