FDMS3660S

Mfr. #:: FDMS3660S
Fabricante:: ON Semiconductor / Fairchild
Descripción:: MOSFET PowerStage Dual N-Ch PowerTrench MOSFET
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: FDMS3660S Ficha de datos
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Más información:: FDMS3660S más información

Atributo del producto
Valor de atributo

Fabricante:: EN Semiconductor

Categoria de producto:: MOSFET

RoHS:: Y

Tecnología:: Si

Estilo de montaje:: SMD / SMT

Paquete / Caja:: Power-56-8

Número de canales:: 2 Channel

Polaridad del transistor:: Canal N

Vds - Voltaje de ruptura de drenaje-fuente:: 30 V

Id - Corriente de drenaje continua:: 13 A, 30 A

Rds On - Resistencia de la fuente de drenaje:: 8 mOhms, 1.8 mOhms

Vgs - Voltaje puerta-fuente:: 20 V, 12 V

Temperatura mínima de funcionamiento:: - 55 C

Temperatura máxima de funcionamiento:: + 150 C

Pd - Disipación de energía:: 2.2 W, 2.5 W

Configuración:: Doble

Nombre comercial:: Power Stage PowerTrench

Embalaje:: Carrete

Altura:: 1.1 mm

Longitud:: 6 mm

Serie:: FDMS3660S

Tipo de transistor:: 2 N-Channel

Ancho:: 5 mm

Marca:: ON Semiconductor / Fairchild

Tipo de producto:: MOSFET

Cantidad de paquete de fábrica:: 3000

Subcategoría:: MOSFET

Unidad de peso:: 0.006032 oz

Tags: FDMS3660S, FDMS3660, FDMS366, FDMS36, FDMS3, FDMS, FDM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDMS3660S Descripción

***et Japan: Transistor MOSFET Array Dual N-CH 30V 60A/145A 8-Pin Power 56 T/R

***emi: Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V

***ure Electronics: Dual N-Channel 30 V 8 /1.8 mO 21 / 62 nC PowerTrench Asymmetric Mosfet - Power56

*** Stop Electro: Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.

***nell: MOSFET, DUAL N CH, 30V, 60A, POWER 56-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:2.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:-; SVHC:No SVHC (20-Jun-2013)

***emi: Power MOSFET 25V 72A 8 mOhm Single N-Channel DPAK

***Yang: Trans MOSFET N-CH 25V 32A 3-Pin(2+Tab) DPAK T/R - Tape and Reel

***r Electronics: Power Field-Effect Transistor, 32A I(D), 25V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ser: MOSFETs- Power and Small Signal 25V 75A N-Channel

***ment14 APAC: N CHANNEL MOSFET, 25V, 75A, D-PAK

***(Formerly Allied Electronics): SIS330DN-T1-GE3 N-channel MOSFET Transistor; 19 A; 30 V; 8-Pin PowePAK 1212

***et: Trans MOSFET N-CH 30V 19.1A 8-Pin PowerPAK 1212 T/R

***or: MOSFET N-CH 30V 35A PPAK1212-8

*** Electronics: MOSFET 30 Volts 35 Amps 52 Watts

***S: French Electronic Distributor since 1988

***nell: MOSFET, N CH, 30V, 35A, PPK 1212; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0045ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:52W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C

***(Formerly Allied Electronics): SIRA18DP-T1-GE3 N-channel MOSFET Transistor; 15.5 A; 30 V; 8-Pin PowerPAK SO

***ure Electronics: Single N-Channel 30 V 15.5 A 3.3 W Surface Mount Mosfet - POWERPAK-SO-8

***nell: MOSFET, N-CH, 30V, 33A, POWERPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:14.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited

***ure Electronics: Single N-Channel 30 V 8.7 mOhm 12 nC HEXFET® Power Mosfet - PQFN-5 x 6 mm

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS

***(Formerly Allied Electronics): MOSFET, 30V, 14A, 8.7 MOHM, 8.1 NC QG, PQFN56

***ment14 APAC: MOSFET, N CH, 30V, 14A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Current Id Max:15A; Package / Case:PQFN; Power Dissipation Pd:3.1W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***ineon: Benefits: RoHS Compliant; Industry-leading quality; 100% Rg tested; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Fully Characterized Avalanche Voltage and Current | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load ControlFET

***et: Trans MOSFET N-CH 30V 15.3A 8-Pin PowerPAK 1212 T/R

***ure Electronics: MOSFET 30V 7.5MOHM@10V 18A N-CH G-IV

***nsix Microsemi: Power Field-Effect Transistor, 38.3A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***nell: MOSFET, N-CH, 30V, 38.3A, PPAK1212-8; Transistor Polarity:N Channel; Continuous Drain Current Id:38.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:19.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:MSL 1 - Unlimited

***mal: N-Ch PowerPAK1212 BWL 30V 7.5mohm@10V

***emi: PowerTrench® MOSFET, N-Channel, 25V, 35A, 8.5mΩ

***ure Electronics: N-Channel 25 V 35 A 8.5 mOhm PowerTrench® MOSFET- TO-252AA

*** Stop Electro: Power Field-Effect Transistor, 35A I(D), 25V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***el Electronic: Rectangular Connectors - Headers, Receptacles, Female Sockets 2 Socket Solder Beryllium Copper Through Hole Bulk Gold Polycyclohexylenedimethylene Terephthalate (PCT), Polyester, Glass Filled 10 CONN SOCKET 10POS 0.1 GOLD PCB

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.

***nell: MOSFET, N CH, 25V, 35A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.0065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 50W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

FDMS3660S Más información

Fairchild PowerTrench MOSFETs

FDMS366xS PowerTrench® Power Stage MOSFETs: ON Semiconductor's FDMS366xS PowerTrench® Power Stage MOSFETs include two specialized N-Channel MOSFETs in a dual PQFN package. Low inductance packaging shortens rise/fall times, resulting in lower switching losses. Integration of the two MOSFETs enables optimum layout for lower circuit inductance and reduced switch node ringing. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.

PowerTrench® MOSFETs: ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
FDMS3660S DISTI # V79:2366_17786121	ON Semiconductor	Trans MOSFET N-CH 30V 13A/30A 8-Pin Power 56 EP T/R	1480	24000:$0.4520 9000:$0.4667 3000:$0.4782 1000:$0.5241 500:$0.6677 100:$0.7772 10:$1.0037 1:$1.2798
FDMS3660S DISTI # V72:2272_06338050	ON Semiconductor	Trans MOSFET N-CH 30V 13A/30A 8-Pin Power 56 EP T/R	170	100:$0.7539 25:$1.0045 10:$1.0225 1:$1.3052
FDMS3660S DISTI # V36:1790_06338050	ON Semiconductor	Trans MOSFET N-CH 30V 13A/30A 8-Pin Power 56 EP T/R	0	3000000:$0.4291 1500000:$0.4295 300000:$0.4646 30000:$0.5304 3000:$0.5416
FDMS3660S DISTI # FDMS3660SFSCT-ND	ON Semiconductor	MOSFET 2N-CH 30V 13A/30A 8-PQFN RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2790In Stock	1000:$0.5976 500:$0.7570 100:$0.9164 10:$1.1750 1:$1.3100
FDMS3660S DISTI # FDMS3660SFSDKR-ND	ON Semiconductor	MOSFET 2N-CH 30V 13A/30A 8-PQFN RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2790In Stock	1000:$0.5976 500:$0.7570 100:$0.9164 10:$1.1750 1:$1.3100
FDMS3660S-F121 DISTI # FDMS3660S-F121TR-ND	ON Semiconductor	MOSFET 2N-CH 30V 13A/30A 8-PQFN RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
FDMS3660S-F121 DISTI # FDMS3660S-F121CT-ND	ON Semiconductor	MOSFET 2N-CH 30V 13A/30A 8-PQFN RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
FDMS3660S-F121 DISTI # FDMS3660S-F121DKR-ND	ON Semiconductor	MOSFET 2N-CH 30V 13A/30A 8-PQFN RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
FDMS3660S DISTI # FDMS3660SFSTR-ND	ON Semiconductor	MOSFET 2N-CH 30V 13A/30A 8-PQFN RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	15000:$0.4951 6000:$0.5145 3000:$0.5415
FDMS3660S DISTI # 26115018	ON Semiconductor	Trans MOSFET N-CH 30V 13A/30A 8-Pin Power 56 EP T/R	1480	31:$1.2798
FDMS3660S DISTI # 25979820	ON Semiconductor	Trans MOSFET N-CH 30V 13A/30A 8-Pin Power 56 EP T/R	170	13:$1.3052
FDMS3660S DISTI # FDMS3660S	ON Semiconductor	Trans MOSFET N-CH 30V 13A/30A 8-Pin Power 56 T/R (Alt: FDMS3660S) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0	150000:$0.6039 75000:$0.6140 30000:$0.6352 15000:$0.6579 9000:$0.6822 6000:$0.7085 3000:$0.7368
FDMS3660S DISTI # FDMS3660S	ON Semiconductor	Trans MOSFET N-CH 30V 13A/30A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS3660S) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.4539 18000:$0.4659 12000:$0.4719 6000:$0.4779 3000:$0.4809
FDMS3660S DISTI # FDMS3660S	ON Semiconductor	Trans MOSFET N-CH 30V 13A/30A 8-Pin Power 56 T/R - Bulk (Alt: FDMS3660S) Min Qty: 313 Container: Bulk	Americas - 0	3130:$0.9869 1565:$1.0119 939:$1.0249 626:$1.0379 313:$1.0449
FDMS3660S DISTI # FDMS3660S	ON Semiconductor	Trans MOSFET N-CH 30V 13A/30A 8-Pin Power 56 T/R (Alt: FDMS3660S) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.4569 18000:€0.4919 12000:€0.5329 6000:€0.5819 3000:€0.7109
FDMS3660S DISTI # 95W3165	ON Semiconductor	Dual MOSFET, Dual N Channel, 60 A, 30 V, 0.0013 ohm, 10 V, 1.5 V RoHS Compliant: Yes	8228	1000:$0.5130 500:$0.6490 100:$0.7350 10:$0.9570 1:$1.1200
FDMS3660S. DISTI # 29AC6266	Fairchild Semiconductor Corporation	ERTRENCH ERSTAGE ASYMMET ROHS COMPLIANT: YES	0	30000:$0.4540 18000:$0.4660 12000:$0.4720 6000:$0.4780 1:$0.4810
FDMS3660S DISTI # 512-FDMS3660S	ON Semiconductor	MOSFET PowerStage Dual N-Ch PowerTrench MOSFET RoHS: Compliant	2796	1:$1.2000 10:$1.0300 100:$0.7920 500:$0.6990 1000:$0.5520 3000:$0.4890 9000:$0.4710
FDMS3660S_F121 DISTI # 512-FDMS3660S_F121	ON Semiconductor	MOSFET PowerTrench PowerStage Asymmetric Dual N-Channel MOSFET RoHS: Compliant	3842	1:$1.6200 10:$1.3800 100:$1.1000 500:$0.9630 1000:$0.7980 3000:$0.7430 6000:$0.7160 9000:$0.6880
FDMS3660S	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA RoHS: Compliant	9907	1000:$0.5400 500:$0.5700 100:$0.5900 25:$0.6200 1:$0.6600
FDMS3660S	Fairchild Semiconductor Corporation		1134
FDMS3660S DISTI # 2322592	ON Semiconductor	MOSFET, DUAL N CH, 30V, 60A, POWER 56-8 RoHS: Compliant	11228	1000:$0.7820 500:$0.9890 100:$1.1300 10:$1.4600 1:$1.7100
FDMS3660S DISTI # 2322592	ON Semiconductor	MOSFET, DUAL N CH, 30V, 60A, POWER 56-8	8268	500:£0.5010 250:£0.5340 100:£0.5670 10:£0.7950 1:£0.9860
FDMS3660S	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA RoHS: Compliant	1695

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Disponibilidad

Valores:: Available
En orden:: 1985
Ingrese la cantidad:

El precio actual de FDMS3660S es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~1,20 US$~~; ~~1,20 US$~~

10: ~~1,03 US$~~; ~~10,30 US$~~

100: ~~0,79 US$~~; ~~79,20 US$~~

500: ~~0,70 US$~~; ~~349,50 US$~~

1000: ~~0,55 US$~~; ~~552,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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FDMS3660S

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes