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IRF460

IRF460
Mfr. #:
IRF460
Fabricante:
IR
Descripción:
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF460 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
IR
categoria de producto
Chips de IC
Tags
IRF460, IRF46, IRF4, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
***ure Electronics
IRF460 Seris 500 V 0.27 Ohm 21 A N-Channel Hexfet®Transistor - TO-3
***ment14 APAC
MOSFET, N, TO-3; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:500V; On Resistance Rds(on):270mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300W; Transistor Case Style:TO-3; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:1200mJ; Current Iar:21A; Current Id Max:21A; Current Temperature:25°C; Fixing Centres:30mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Lead Spacing:11mm; No. of Transistors:1; Package / Case:TO-3; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Pulse Current Idm:84A; Repetitive Avalanche Energy Max:30mJ; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Weight:11.5g
***ineon
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
***ernational Rectifier
500V Single N-Channel Hi-Rel MOSFET in a TO-204AA package
***nell
MOSFET, N, TO-3; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:500V; Current, Id Cont:4.5A; Resistance, Rds On:1.5ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-3; Termination Type:Through Hole; Avalanche Single Pulse Energy Eas:1.1mJ; Current Iar:4.5A; Current, Idm Pulse:18A; Fixing Centres:30mm; Lead Spacing:11mm; No. of Pins:2; Power Dissipation:75W; Power, Pd:75W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Transistors, No. of:1; Voltage, Vds Max:500V; Voltage, Vgs th Max:4V; Weight:0.012kg
***ineon
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
***ource
200V Single N-Channel Hi-Rel MOSFET in a TO-204AE package; A IRF240 with Standard Packaging
***ure Electronics
Single N-Channel 200 V 125 W 60 nC Hexfet Transistor Through Hole - TO-3
***el Electronic
Power Field-Effect Transistor, 18A I(D), 200V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:18A; On Resistance Rds(On):0.18Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:200V; Threshold Voltage Vgs:4V; Msl:- Rohs Compliant: No
***nell
MOSFET, N, TO-3; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:18A; Resistance, Rds On:0.18ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-3; Termination Type:Through Hole; Centres, Fixing:30mm; Current, Iar:18A; Current, Idm Pulse:72A; Energy, Avalanche Repetitive Ear:12.5mJ; Energy, Avalanche Single Pulse Eas:450mJ; Pins, No. of:2; Pitch, Lead:11mm; Power Dissipation:125W; Power, Pd:125W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Transistors, No. of:1; Voltage, Vds Max:200V; Voltage, Vgs th Max:4V; Weight:0.012kg
***ark
Trans Mosfet N-Ch 400V 14A 3-Pin(2+Tab) To-3. Note :rohs Non-Compliant Rohs Compliant: No
***ineon
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
***el Electronic
Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
***ineon
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
***ineon SCT
-100V Single P-Channel Hi-Rel MOSFET in a TO-204AA package, TO-204AA-2
***el Electronic
Power Field-Effect Transistor, 18A I(D), 100V, 0.23ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-100V; Continuous Drain Current, Id:-18A; On Resistance, Rds(on):0.2ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:TO-204AA ;RoHS Compliant: No
***ment14 APAC
MOSFET, P, TO-3; Transistor Polarity:P Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:100V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:125W; Transistor Case Style:TO-3; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Current Id Max:-18A; Current Temperature:25°C; Device Marking:IRF9140; Fixing Centres:30mm; Full Power Rating Temperature:25°C; Lead Spacing:11mm; No. of Transistors:1; Package / Case:TO-3; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Pulse Current Idm:76A; Termination Type:Through Hole; Voltage Vds Typ:-100V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V
***ineon
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
***ure Electronics
Single N-Channel 400 V 150 W 110 nC Hexfet Transistor Through Hole - TO-3
***et
100V THRU 500V, UP TO 38A, N-CHANNEL, ENHANCEMENT MODE MOSFET POWER TRANSISTOR 2TO-204
***ure Electronics
N-Channel 100 V 40 mOhm 97 nC Through Hole Advanced Power Mosfet - TO-3P
***Yang
Trans MOSFET N-CH 100V 43A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube
***inecomponents.com
N-CH/100V/40A/0.04OHM/Substitute of IRFP150 & IRFP150N
***r Electronics
Power Field-Effect Transistor, 43A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
Af 100V 40Mohm To3Pn Rohs Compliant: Yes
***enic
100V 43A 40m´Î@10V21.5A 193W 4V@250uA 185pF@25V 1.75nF@25V 75nC@10V -55¡Í~+175¡Í@(Tj) TO-3P MOSFETs ROHS
***i-Key
PFET, 43A I(D), 100V, 0.04OHM, 1
***eco
IRFP150A.,3LD PLAS EXPOSED HEA T SINK
***el Electronic
IC REG LIN 1.8V 150MA VCSP60N1
Parte # Mfg. Descripción Valores Precio
IRF460HHarris Semiconductor 6
  • 1:$22.1000
IRF460International Rectifier 2
    IRF460International Rectifier 191
      Imagen Parte # Descripción
      IRFPE50PBF

      Mfr.#: IRFPE50PBF

      OMO.#: OMO-IRFPE50PBF

      		 MOSFET N-CH 800V HEXFET MOSFET
      IRF9530

      Mfr.#: IRF9530

      OMO.#: OMO-IRF9530

      		 MOSFET RECOMMENDED ALT 844-IRF9530PBF
      IRFR9010PBF

      Mfr.#: IRFR9010PBF

      OMO.#: OMO-IRFR9010PBF-VISHAY

      		 MOSFET P-CH 50V 5.3A DPAK
      IRF9610STRR

      Mfr.#: IRF9610STRR

      OMO.#: OMO-IRF9610STRR-VISHAY

      		 MOSFET P-CH 200V 1.8A D2PAK
      IRFM340

      Mfr.#: IRFM340

      OMO.#: OMO-IRFM340-1190

      		 Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-254AA - Bulk (Alt: IRFM340)
      IRF7325

      Mfr.#: IRF7325

      OMO.#: OMO-IRF7325-INFINEON-TECHNOLOGIES

      		 MOSFET 2P-CH 12V 7.8A 8-SOIC
      IRF8010L

      Mfr.#: IRF8010L

      OMO.#: OMO-IRF8010L-1190

      		 Nuevo y original
      IRF8788PBF-1

      Mfr.#: IRF8788PBF-1

      OMO.#: OMO-IRF8788PBF-1-1190

      		 Nuevo y original
      IRFP450LC

      Mfr.#: IRFP450LC

      OMO.#: OMO-IRFP450LC-VISHAY

      		 MOSFET N-Chan 500V 14 Amp
      IRF730ASPBF

      Mfr.#: IRF730ASPBF

      OMO.#: OMO-IRF730ASPBF-VISHAY

      		 IGBT Transistors MOSFET N-Chan 400V 5.5 Amp
      Disponibilidad
      Valores:
      Available
      En orden:
      1000
      Ingrese la cantidad:
      El precio actual de IRF460 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,00 US$
      0,00 US$
      10
      0,00 US$
      0,00 US$
      100
      0,00 US$
      0,00 US$
      500
      0,00 US$
      0,00 US$
      1000
      0,00 US$
      0,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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