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2N7002E-7-F

2N7002E-7-F
Mfr. #:
2N7002E-7-F
Fabricante:
Diodes Incorporated
Descripción:
IGBT Transistors MOSFET N-Channel
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
2N7002E-7-F Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
2N7002E-7-F más información
Atributo del producto
Valor de atributo
Fabricante
Diodos incorporados
categoria de producto
FET - Single
Serie
2N7002
embalaje
Embalaje alternativo de Digi-ReelR
Unidad de peso
0.000282 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
TO-236-3, SC-59, SOT-23-3
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
1 Channel
Paquete de dispositivo de proveedor
SOT-23-3
Configuración
Único
Tipo FET
Canal N MOSFET, óxido metálico
Potencia máxima
370mW
Tipo transistor
1 N-Channel
Drenaje-a-fuente-voltaje-Vdss
60V
Entrada-Capacitancia-Ciss-Vds
50pF @ 25V
Función FET
Estándar
Corriente-Continuo-Drenaje-Id-25 ° C
250mA (Ta)
Rds-On-Max-Id-Vgs
3 Ohm @ 250mA, 10V
Vgs-th-Max-Id
2.5V @ 250μA
Puerta-Carga-Qg-Vgs
0.22nC @ 4.5V
Disipación de potencia Pd
300 mW
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
250 mA
Vds-Drain-Source-Breakdown-Voltage
60 V
Resistencia a la fuente de desagüe de Rds
4 Ohms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
11 ns
Tiempo de retardo de encendido típico
7 ns
Modo de canal
Mejora
Tags
2N7002E-7, 2N7002E, 2N7002, 2N700, 2N70, 2N7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 150, N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 Diodes Inc 2N7002E-7-F
***et
Transistor MOSFET N-CH 60V 300mA 3-Pin SOT-23 T/R
***p One Stop Global
Trans MOSFET N-CH 60V 0.3A Automotive 3-Pin SOT-23 T/R
***ure Electronics
N-Channel 60 V 4 Ohm MosFet Surface Mount - SOT-23-3
***ied Electronics & Automation
N-Channel Enhancement MOSFET SOT-23
*** Source Electronics
MOSFET N-CH 60V 0.25A SOT23-3
***ser
MOSFETs - Low Threshold Voltage N-Channel
Power MOSFETs
Diodes Inc. continues to expand its portfolio of power MOSFETs with new N- and P-channel devices with breakdown voltages up to 450V and a wide range of package options. The Diodes Inc. MOSFET portfolio is ideally suited to a range of applications, including DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive.
Parte # Mfg. Descripción Valores Precio
2N7002E-7-F
DISTI # 2N7002E-FDICT-ND		Diodes IncorporatedMOSFET N-CH 60V 0.25A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		47661In Stock
  • 1000:$0.0619
  • 500:$0.0891
  • 100:$0.1627
  • 10:$0.2870
  • 1:$0.3100
2N7002E-7-F
DISTI # 2N7002E-FDIDKR-ND		Diodes IncorporatedMOSFET N-CH 60V 0.25A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		47661In Stock
  • 1000:$0.0619
  • 500:$0.0891
  • 100:$0.1627
  • 10:$0.2870
  • 1:$0.3100
2N7002E-7-F
DISTI # 2N7002E-FDITR-ND		Diodes IncorporatedMOSFET N-CH 60V 0.25A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		45000In Stock
  • 3000:$0.0546
2N7002E-7-F
DISTI # 2N7002E-7-F		Diodes IncorporatedTrans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: 2N7002E-7-F)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.0249
  • 6000:$0.0236
  • 12000:$0.0225
  • 18000:$0.0215
  • 30000:$0.0210
2N7002E-7-F
DISTI # 2N7002E-7-F		Diodes IncorporatedTrans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R (Alt: 2N7002E-7-F)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.0326
  • 6000:€0.0325
  • 12000:€0.0324
  • 18000:€0.0323
  • 30000:€0.0284
2N7002E-7-F
DISTI # 70550310		Diodes IncorporatedN-Channel Enhancement MOSFET SOT-23
RoHS: Compliant		0
  • 750:$0.0560
  • 1500:$0.0410
  • 2250:$0.0360
  • 3000:$0.0330
2N7002E-7-F
DISTI # 621-2N7002E-7-F		Diodes IncorporatedMOSFET N-Channel
RoHS: Compliant		44936
  • 1:$0.2700
  • 10:$0.1800
  • 100:$0.0750
  • 1000:$0.0520
  • 3000:$0.0400
2N7002E-7
DISTI # 621-2N7002E-7		Diodes IncorporatedMOSFET N-Channel
RoHS: Not compliant		0
    2N7002E-7-F
    DISTI # 8228641P    		Zetex / Diodes IncN-CHANNEL ENHANCEMENT MOSFET SOT-23, RL13350
    • 750:£0.0510
    • 1500:£0.0440
    2N7002E-7-F
    DISTI # 8228641    		Zetex / Diodes IncN-CHANNEL ENHANCEMENT MOSFET SOT-23, PK7950
    • 150:£0.0550
    • 750:£0.0510
    • 1500:£0.0440
    2N7002E-7-F
    DISTI # 2N7002E-7-F    		Diodes IncorporatedTransistor: N-MOSFET,unipolar,60V,0.2A,0.37W,SOT2323
    • 10:$0.0557
    • 50:$0.0376
    • 250:$0.0332
    • 1000:$0.0299
    • 3000:$0.0279
    2N7002E-7-F
    DISTI # XSFP00000139057    		Diodes IncorporatedSmall Signal Field-Effect Transistor,0.24AI(D),60V,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET
    RoHS: Compliant    		12114
    • 6000:$0.0440
    • 12114:$0.0400
    Imagen Parte # Descripción
    2N7002VA

    Mfr.#: 2N7002VA

    OMO.#: OMO-2N7002VA

    		 MOSFET N-Chan Enhancement Mode Field Effect
    2N7002-7-F/2N7002K-7

    Mfr.#: 2N7002-7-F/2N7002K-7

    OMO.#: OMO-2N7002-7-F-2N7002K-7-1190

    		 Nuevo y original
    2N7002-F

    Mfr.#: 2N7002-F

    OMO.#: OMO-2N7002-F-1190

    		 INSTOCK
    2N7002BKS

    Mfr.#: 2N7002BKS

    OMO.#: OMO-2N7002BKS-1190

    		 MOSFET, NN CHANNEL, 60V, 0.3A, SOT363, Transistor Polarity:N Channel, Continuous Drain Current Id:300mA, Drain Source Voltage Vds:60V, On Resistance Rds(on):1ohm, Rds(on) Test Voltage Vgs:10V, T
    2N7002BKW

    Mfr.#: 2N7002BKW

    OMO.#: OMO-2N7002BKW-1190

    		 MOSFET, N CHANNEL, 60V, 0.31A, SOT323, Transistor Polarity:N Channel, Continuous Drain Current Id:310mA, Drain Source Voltage Vds:60V, On Resistance Rds(on):1ohm, Rds(on) Test Voltage Vgs:10V, T
    2N7002LT3

    Mfr.#: 2N7002LT3

    OMO.#: OMO-2N7002LT3-ON-SEMICONDUCTOR

    		 MOSFET N-CH 60V 0.115A SOT-23
    2N7002MTF

    Mfr.#: 2N7002MTF

    OMO.#: OMO-2N7002MTF-ON-SEMICONDUCTOR

    		 MOSFET N-CH 60V 0.115A SOT-23
    2N7002DW

    Mfr.#: 2N7002DW

    OMO.#: OMO-2N7002DW-ON-SEMICONDUCTOR

    		 MOSFET 2N-CH 60V 0.115A SC70-6
    2N7002VC-7

    Mfr.#: 2N7002VC-7

    OMO.#: OMO-2N7002VC-7-DIODES

    		 IGBT Transistors MOSFET Dual N-Channel
    2N7002-T1-E3-CUT TAPE

    Mfr.#: 2N7002-T1-E3-CUT TAPE

    OMO.#: OMO-2N7002-T1-E3-CUT-TAPE-1190

    		 Nuevo y original
    Disponibilidad
    Valores:
    Available
    En orden:
    5000
    Ingrese la cantidad:
    El precio actual de 2N7002E-7-F es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,03 US$
    0,03 US$
    10
    0,03 US$
    0,29 US$
    100
    0,03 US$
    2,76 US$
    500
    0,03 US$
    13,00 US$
    1000
    0,02 US$
    24,50 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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