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IPB020N10N5ATMA1

IPB020N10N5ATMA1
Mfr. #:
IPB020N10N5ATMA1
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors MOSFET N-Ch 100V 120A D2PAK-2
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB020N10N5ATMA1 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
IPB020N10N5ATMA1 más información
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Carrete
Alias ​​de parte
IPB020N10N5 SP001132558
Unidad de peso
0.139332 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
TO-263-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
375 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
29 ns
Hora de levantarse
26 ns
Vgs-Puerta-Fuente-Voltaje
+/- 20 V
Id-corriente-de-drenaje-continua
120 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Source-Threshold-Voltage
2.2 V
Resistencia a la fuente de desagüe de Rds
2.5 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
77 ns
Tiempo de retardo de encendido típico
33 ns
Qg-Gate-Charge
168 nC
Transconductancia directa-Mín.
124 S
Modo de canal
Mejora
Tags
IPB020N1, IPB020, IPB02, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
IPB020N10N5 Series 100 V 2 mOhm 176 A OptiMOSTM5 Power Transistor - PG-TO 263-3
***ineon SCT
OptiMOS™ 5 100V power MOSFET in D2PAK package with 22% lower RDS(on) for telecom and server power supply applications, PG-TO263-3, RoHS
***ark
Mosfet, N-Ch, 100V, 120A, 175Deg C, 375W; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:120A; On Resistance Rds(On):0.0017Ohm; Transistor Mounting:surface Mount; Threshold Voltage Vgs:3V Rohs Compliant: Yes
***ineon
OptiMOS 5 100V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 100V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 43% from previous generation | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Parte # Mfg. Descripción Valores Precio
IPB020N10N5ATMA1
DISTI # 31260256		Infineon Technologies AGTrans MOSFET N-CH 100V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 1000:$4.2667
IPB020N10N5ATMA1
DISTI # IPB020N10N5ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 120A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		On Order
  • 1000:$3.4114
IPB020N10N5ATMA1
DISTI # IPB020N10N5ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 500:$4.1663
  • 100:$5.1451
  • 10:$6.2750
  • 1:$7.0300
IPB020N10N5ATMA1
DISTI # IPB020N10N5ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 500:$4.1663
  • 100:$5.1451
  • 10:$6.2750
  • 1:$7.0300
IPB020N10N5ATMA1
DISTI # IPB020N10N5ATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB020N10N5ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$3.2900
  • 2000:$3.2900
  • 4000:$3.2900
  • 6000:$3.2900
  • 10000:$3.2900
IPB020N10N5ATMA1
DISTI # 13AC9024		Infineon Technologies AGMOSFET, N-CH, 100V, 120A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0017ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes25
  • 1:$5.8700
  • 10:$4.9900
  • 25:$4.7700
  • 50:$4.5400
  • 100:$4.3200
  • 250:$4.1000
  • 500:$3.6800
IPB020N10N5
DISTI # 726-IPB020N10N5		Infineon Technologies AGMOSFET N-Ch 100V 120A D2PAK-2
RoHS: Compliant		1919
  • 1:$5.8700
  • 10:$4.9900
  • 100:$4.3200
  • 250:$4.1000
  • 500:$3.6800
  • 1000:$3.1100
IPB020N10N5ATMA1
DISTI # 726-IPB020N10N5ATMA1		Infineon Technologies AGMOSFET N-Ch 100V 120A D2PAK-2
RoHS: Compliant		0
  • 1:$5.8700
  • 10:$4.9900
  • 100:$4.3200
  • 250:$4.1000
  • 500:$3.6800
  • 1000:$3.1100
IPB020N10N5ATMA1Infineon Technologies AGIPB020N10N5 Series 100 V 2 mOhm 176 A OptiMOSTM5 Power Transistor - PG-TO 263-3
RoHS: Not Compliant		1000Reel
  • 1000:$3.0500
IPB020N10N5ATMA1
DISTI # 2725837		Infineon Technologies AGMOSFET, N-CH, 100V, 120A, TO-263
RoHS: Compliant		25
  • 1:$11.2100
  • 10:$10.0100
  • 100:$8.2100
  • 500:$6.6500
IPB020N10N5ATMA1
DISTI # 2725837		Infineon Technologies AGMOSFET, N-CH, 100V, 120A, TO-263
RoHS: Compliant		553
  • 1:£5.1600
  • 10:£4.6200
  • 100:£3.9400
Imagen Parte # Descripción
IPB020N10N5LFATMA1

Mfr.#: IPB020N10N5LFATMA1

OMO.#: OMO-IPB020N10N5LFATMA1

 MOSFET DIFFERENTIATED MOSFETS
IPB020N10N5

Mfr.#: IPB020N10N5

OMO.#: OMO-IPB020N10N5

 MOSFET N-Ch 100V 120A D2PAK-2
IPB020N10N5ATMA1

Mfr.#: IPB020N10N5ATMA1

OMO.#: OMO-IPB020N10N5ATMA1

 MOSFET N-Ch 100V 120A D2PAK-2
IPB020N10N5LFATMA1

Mfr.#: IPB020N10N5LFATMA1

OMO.#: OMO-IPB020N10N5LFATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 100V D2PAK-3
IPB020N10N5

Mfr.#: IPB020N10N5

OMO.#: OMO-IPB020N10N5-1190

 Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) TO-263
IPB020N10N5LF

Mfr.#: IPB020N10N5LF

OMO.#: OMO-IPB020N10N5LF-1190

 SP001503854 , DIFFERENTIATED MOSFETS (Alt: IPB020N10N5LF)
IPB020N10N5ATMA1

Mfr.#: IPB020N10N5ATMA1

OMO.#: OMO-IPB020N10N5ATMA1-INFINEON-TECHNOLOGIES

 IGBT Transistors MOSFET N-Ch 100V 120A D2PAK-2
Disponibilidad
Valores:
Available
En orden:
2000
Ingrese la cantidad:
El precio actual de IPB020N10N5ATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
4,58 US$
4,58 US$
10
4,35 US$
43,46 US$
100
4,12 US$
411,75 US$
500
3,89 US$
1 944,40 US$
1000
3,66 US$
3 660,00 US$
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