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BSP19AT1G

BSP19AT1G
Mfr. #:
BSP19AT1G
Fabricante:
ON Semiconductor
Descripción:
Bipolar Transistors - BJT 1A 400V NPN
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSP19AT1G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BSP19AT1G DatasheetBSP19AT1G Datasheet (P4)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores bipolares - BJT
RoHS:
Y
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOT-223-4
Polaridad del transistor:
NPN
Configuración:
Único
Voltaje colector-emisor VCEO Max:
350 V
Colector- Voltaje base VCBO:
400 V
Emisor- Voltaje base VEBO:
5 V
Voltaje de saturación colector-emisor:
0.5 V
Corriente máxima del colector de CC:
100 mA
Producto de ganancia de ancho de banda fT:
70 MHz
Temperatura mínima de funcionamiento:
- 65 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
BSP19A
Altura:
1.75 mm
Longitud:
6.7 mm
Embalaje:
Carrete
Ancho:
3.7 mm
Marca:
EN Semiconductor
Corriente continua del colector:
100 mA
Colector de CC / Ganancia base hfe Min:
40
Pd - Disipación de energía:
800 mW
Tipo de producto:
BJT - Transistores bipolares
Cantidad de paquete de fábrica:
1000
Subcategoría:
Transistores
Unidad de peso:
0.003951 oz
Tags
BSP19AT, BSP19A, BSP19, BSP1, BSP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
Transistor, Bipolar,Si,NPN,Power,VCEO 350VDC,IC 100mA,PD 0.8W,SOT-223,hFE 40
***ical
Trans GP BJT NPN 350V 0.1A Automotive 4-Pin(3+Tab) SOT-223 T/R
***S.I.T. Europe - USA - Asia
Small Signal Bipolar Transistor, 0.1A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA
***o-Tech
Transistor SOT223-4/HIGH VOLTAGE TRANSISTOR NPN
***ment14 APAC
BIPOLAR TRANSISTOR, NPN, 350V; Transisto; BIPOLAR TRANSISTOR, NPN, 350V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency Typ ft:70MHz; Power Dissipation Pd:800mW; DC Collector Current:100mA; DC Current Gain hFE:40; No. of Pins:3
***th Star Micro
This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.
Parte # Mfg. Descripción Valores Precio
BSP19AT1G
DISTI # BSP19AT1GOSTR-ND		ON SemiconductorTRANS NPN 350V 0.1A SOT223
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)		Limited Supply - Call
    BSP19AT1G
    DISTI # BSP19AT1GOSCT-ND    		ON SemiconductorTRANS NPN 350V 0.1A SOT223
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      BSP19AT1G
      DISTI # BSP19AT1GOSDKR-ND      		ON SemiconductorTRANS NPN 350V 0.1A SOT223
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        NSVBSP19AT1G
        DISTI # NSVBSP19AT1G-ND        		ON SemiconductorTRANS NPN 350V 0.1A SOT223
        RoHS: Compliant
        Min Qty: 1000
        Container: Tape & Reel (TR)        		Limited Supply - Call
          BSP19AT1G
          DISTI # 10N9392          		ON SemiconductorBIPOLAR TRANSISTOR, NPN, 350V,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:350V,Transition Frequency ft:70MHz,Power Dissipation Pd:800mW,DC Collector Current:100mA,DC Current Gain hFE:40hFE,No. of Pins:4Pins RoHS Compliant: Yes0
            BSP19AT1G
            DISTI # 70100376            		ON SemiconductorTransistor,Bipolar,Si,NPN,Power,VCEO 350VDC,IC 100mA,PD 0.8W,SOT-223,hFE 40
            RoHS: Compliant            		0
            • 1:$0.3290
            • 100:$0.3260
            • 250:$0.3230
            BSP19AT1G
            DISTI # 863-BSP19AT1G            		ON SemiconductorBipolar Transistors - BJT 1A 400V NPN
            RoHS: Compliant            		0
              BSP19AT1
              DISTI # 863-BSP19AT1              		ON SemiconductorBipolar Transistors - BJT 1A 400V NPN
              RoHS: Not compliant              		0
                NSVBSP19AT1G
                DISTI # 863-NSVBSP19AT1G                		ON SemiconductorOn Semiconductor SS SOT223 HV XTR NPN 35
                RoHS: Compliant                		0
                  BSP19AT1GON Semiconductor 405
                    BSP19AT1GON SemiconductorSmall Signal Bipolar Transistor, 0.1A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA
                    RoHS: Compliant                    		Europe - 1000
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                      BSP171P L6327

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                      BSP1203SM-25-T/R

                      Mfr.#: BSP1203SM-25-T/R

                      OMO.#: OMO-BSP1203SM-25-T-R-1190

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                      BSP125 E6327

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                      OMO.#: OMO-BSP125-E6327-INFINEON-TECHNOLOGIES

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                      Disponibilidad
                      Valores:
                      Available
                      En orden:
                      5000
                      Ingrese la cantidad:
                      El precio actual de BSP19AT1G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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