SI7629DN-T1-GE3

Mfr. #:: SI7629DN-T1-GE3
Fabricante:: Vishay
Descripción:: MOSFET P-CH 20V 35A 1212-8 PPAK
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: SI7629DN-T1-GE3 Ficha de datos
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Más información:: SI7629DN-T1-GE3 más información

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Valor de atributo

Fabricante: Vishay Siliconix

categoria de producto: FET - Single

Serie: TrincheraFETR

embalaje: Embalaje alternativo de Digi-ReelR

Alias de parte: SI7629DN-GE3

Estilo de montaje: SMD / SMT

Paquete-Estuche: PowerPAKR 1212-8

Tecnología: Si

Temperatura de funcionamiento: -55°C ~ 150°C (TJ)

Tipo de montaje: Montaje superficial

Número de canales: 1 Channel

Paquete de dispositivo de proveedor: PowerPAKR 1212-8

Configuración: Único

Tipo FET: Canal P MOSFET, óxido metálico

Potencia máxima: 52W

Tipo transistor: 1 P-Channel

Drenaje-a-fuente-voltaje-Vdss: 20V

Entrada-Capacitancia-Ciss-Vds: 5790pF @ 10V

Función FET: Estándar

Corriente-Continuo-Drenaje-Id-25 ° C: 35A (Tc)

Rds-On-Max-Id-Vgs: 4.6 mOhm @ 20A, 10V

Vgs-th-Max-Id: 1.5V @ 250μA

Puerta-Carga-Qg-Vgs: 177nC @ 10V

Disipación de potencia Pd: 52 W

Temperatura máxima de funcionamiento: + 150 C

Temperatura mínima de funcionamiento: - 55 C

Vgs-Puerta-Fuente-Voltaje: 12 V

Id-corriente-de-drenaje-continua: - 35 A

Vds-Drain-Source-Breakdown-Voltage: - 20 V

Vgs-th-Gate-Source-Threshold-Voltage: - 1.5 V

Resistencia a la fuente de desagüe de Rds: 3.8 mOhms

Polaridad del transistor: P-Channel

Qg-Gate-Charge: 118 nC

Transconductancia directa-Mín.: 64 S

Tags: SI7629DN-T, SI7629, SI762, SI76, SI7

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7629DN-T1-GE3 Más información

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET® P-Channel MOSFETs: Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
SI7629DN-T1-GE3 DISTI # V72:2272_09215664	Vishay Intertechnologies	Trans MOSFET P-CH 20V 21.3A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	4923	3000:$0.4581 1000:$0.4798 500:$0.5511 250:$0.6026 100:$0.6235 25:$0.7641 10:$0.7672 1:$0.8873
SI7629DN-T1-GE3 DISTI # SI7629DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 20V 35A 1212-8 PPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6691In Stock	1000:$0.5438 500:$0.6889 100:$0.8883 10:$1.1240 1:$1.2700
SI7629DN-T1-GE3 DISTI # SI7629DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 20V 35A 1212-8 PPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6691In Stock	1000:$0.5438 500:$0.6889 100:$0.8883 10:$1.1240 1:$1.2700
SI7629DN-T1-GE3 DISTI # SI7629DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 20V 35A 1212-8 PPAK RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	3000:$0.4928
SI7629DN-T1-GE3 DISTI # 25789888	Vishay Intertechnologies	Trans MOSFET P-CH 20V 21.3A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	4923	3000:$0.4581 1000:$0.4798 500:$0.5511 250:$0.6026 100:$0.6235 25:$0.7641 16:$0.7672
SI7629DN-T1-GE3 DISTI # SI7629DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 21.3A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7629DN-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.3229 6000:$0.3129 12000:$0.3009 18000:$0.2919 30000:$0.2839
SI7629DN-T1-GE3 DISTI # 86R3929	Vishay Intertechnologies	P-CHANNEL 20-V (D-S) MOSFET	0	1:$0.5150 3000:$0.5150
SI7629DN-T1-GE3. DISTI # 30AC0202	Vishay Intertechnologies	P-CHANNEL 20-V (D-S) MOSFET , ROHS COMPLIANT: NO	0	1:$0.5150 3000:$0.5150
SI7629DN-T1-GE3 DISTI # 781-SI7629DN-T1-GE3	Vishay Intertechnologies	MOSFET 20V 35A 52W RoHS: Compliant	3993	1:$1.1200 10:$0.9220 100:$0.7080 500:$0.6090 1000:$0.5350 3000:$0.5340
SI7629DNT1GE3	Vishay Intertechnologies	RoHS: Compliant	Europe - 3000
SI7629DN-T1-GE3	Vishay Intertechnologies	MOSFET 20V 35A 52W RoHS: Compliant	Americas -
SI7629DN-T1-GE3 DISTI # C1S803601953764	Vishay Intertechnologies	MOSFETs RoHS: Compliant	4923	250:$0.6219 100:$0.6236 25:$0.7643 10:$0.7674

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: SI7629DN-T1-GE3 OMO.#: OMO-SI7629DN-T1-GE3	MOSFET 20V 35A 52W
	Mfr.#: SI7629DN-T1-GE3-CUT TAPE OMO.#: OMO-SI7629DN-T1-GE3-CUT-TAPE-1190	Nuevo y original
	Mfr.#: SI7629DN-T1 OMO.#: OMO-SI7629DN-T1-1190	Nuevo y original
	Mfr.#: SI7629DN-T1-GE3 OMO.#: OMO-SI7629DN-T1-GE3-VISHAY	MOSFET P-CH 20V 35A 1212-8 PPAK
	Mfr.#: SI7629DNT1GE3 OMO.#: OMO-SI7629DNT1GE3-1190	Power Field-Effect Transistor, 35A I(D), 20V, 0.0046ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Disponibilidad

Valores:: Available
En orden:: 2000
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El precio actual de SI7629DN-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,43 US$~~; ~~0,43 US$~~

10: ~~0,40 US$~~; ~~4,05 US$~~

100: ~~0,38 US$~~; ~~38,33 US$~~

500: ~~0,36 US$~~; ~~181,00 US$~~

1000: ~~0,34 US$~~; ~~340,70 US$~~

Empezar con

SI7629DN-T 3
SI7629 4
SI762 12
SI76 155
SI7 1547

SI7629DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes