BSS84PWH6327XTSA1

BSS84PWH6327XTSA1
Mfr. #:
BSS84PWH6327XTSA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET P-Ch -60V 150mA SOT-323-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSS84PWH6327XTSA1 Ficha de datos
Entrega:
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Pago:
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HTML Datasheet:
BSS84PWH6327XTSA1 DatasheetBSS84PWH6327XTSA1 Datasheet (P4-P6)BSS84PWH6327XTSA1 Datasheet (P7-P9)
ECAD Model:
Más información:
BSS84PWH6327XTSA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOT-323-3
Número de canales:
1 Channel
Polaridad del transistor:
P-Channel
Vds - Voltaje de ruptura de drenaje-fuente:
60 V
Id - Corriente de drenaje continua:
150 mA
Rds On - Resistencia de la fuente de drenaje:
4.6 Ohms
Vgs th - Voltaje umbral puerta-fuente:
2 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
1.5 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
300 mW
Configuración:
Único
Modo de canal:
Mejora
Calificación:
AEC-Q101
Embalaje:
Carrete
Altura:
0.9 mm
Longitud:
2 mm
Serie:
BSS84
Tipo de transistor:
1 P-Channel
Ancho:
1.25 mm
Marca:
Infineon Technologies
Transconductancia directa - Mín .:
80 mS
Otoño:
20.5 ns
Tipo de producto:
MOSFET
Hora de levantarse:
16.2 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
8.6 ns
Tiempo típico de retardo de encendido:
6.7 ns
Parte # Alias:
BSS84PW BSS84PWH6327XT H6327 SP000917564
Unidad de peso:
0.000176 oz
Tags
BSS84PWH, BSS84PW, BSS84P, BSS84, BSS8, BSS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single P-Channel 60 V 8 Ohm 1 nC SIPMOS® Small Signal Mosfet - SOT-323
***ark
MOSFET, P-CH, 60V, 0.15A, SOT-323; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:150mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V RoHS Compliant: Yes
***ineon
Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger
*** Source Electronics
Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-323 T/R / MOSFET N-CH 100V 170MA SC70-3
***el Electronic
0805 0.22 uF 50 V ±10 % Tolerance X7R Surface Mount Multilayer Ceramic Capacitor
***ure Electronics
N-Channel 100 V 10 O Surface Mount Enhancement Mode Mosfet - SOT-323
***ment14 APAC
MOSFET, N-CH, 100V, 0.17A, SOT-323; Transistor Polarity:N Channel; Continuous Drain Current Id:170mA; Source Voltage Vds:100V; On Resistance
***nell
MOSFET, N-CH, 100V, 0.17A, SOT-323; Transistor Polarity: N Channel; Continuous Drain Current Id: 170mA; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.4V; Power Dissipation Pd: 200mW; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***roFlash
transistor mosfet n-channel 60volt 115ma 200mwatt sot-323
***ical
Trans MOSFET N-CH 60V 0.115A Automotive 3-Pin SOT-323 T/R
***ure Electronics
N-Channel 60 V 7.5 Ohm Surface Mount Enhancement Mode Transistor SOT-323
***ment14 APAC
MOSFET, N CH, 60V, 0.115A, SOT-323; Transistor Polarity:N Channel; Continuous Drain Current Id:115mA; Source Voltage Vds:60V; On Resistance
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SOT-323 Polarity: N Variants: N-Channel, Enh. Power dissipation: 0.2 W
***nell
MOSFET, N CH, 60V, 0.115A, SOT-323; Transistor Polarity: N Channel; Continuous Drain Current Id: 115mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 13.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 200mW; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 800mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Enhancement; Voltage Vds Typ: 60V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
***ure Electronics
N-Channel 60 V 7.5 Ohm SMT Enhancement Field Effect Transistor SOT-23-3
***emi
N-Channel MOSFET, small signal 60V, 340mA, 1.6 Ohm, SC-70
*** Source Electronics
Trans MOSFET N-CH 60V 0.115A 3-Pin SC-70 T/R / MOSFET N-CH 60V 115MA SOT-323
***nell
MOSFET, N-CH, 78V, 0.115A, SOT-323-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 115mA; Drain Source Voltage Vds: 78V; On Resistance Rds(on): 2.53ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.76V; Power Dissipation Pd: 200mW; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***Yang
Transistor MOSFET N-CH 100V 170mA 3-Pin SOT-323 T/R - Tape and Reel
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 100 V, RoHS
***roFlash
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***nell
MOSFET, AEC-Q101, N-CH, 100V, SOT-323; Transistor Polarity: N Channel; Continuous Drain Current Id: 170mA; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.4V; Power Dissipation Pd: 200mW; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ark
Bss Family Sot323 T&r 3K Rohs Compliant: Yes
***emi
N-Channel MOSFET, Enhancement Mode, 60V, 310mA, 1.6Ω
***ure Electronics
Single N-Channel 60 V 2.4 Ohm 300 mW Silicon Surface Mount Mosfet - SOT-323
***et
Transistor MOSFET N-CH 60V 0.31A 3-Pin SOT-323 T/R
***ment14 APAC
MOSFET, N CH, 60V, 0.31A, SOT-323-3; Transistor Polarity:N Channel; Continuous Drain Current Id:310mA; Source Voltage Vds:60V; On Resistance
***nell
MOSFET, N CH, 60V, 0.31A, SOT-323-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 310mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 1.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.1V; Power Dissipation Pd: 300mW; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***emi
N-Channel MOSFET, Logic Level Enhancement Mode, 100V, 0.17A, 6Ω
***nell
MOSFET, N-CH, 100V, 0.17A, 150DEG C; Transistor Polarity: N Channel; Continuous Drain Current Id: 170mA; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 1.39; Available until stocks are exhausted Alternative available
***ark
MOSFET, N-CH, 100V, 0.17A, 0.2W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:170mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V RoHS Compliant: Yes
***rchild Semiconductor
This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology. This product minimizes on-state resistance while providing rugged, reliable and fast switching performance. This product is particularly suited for low-voltage, low-current applications such as small servo motor control, power MOSFET gate drivers, logic level transistor, high speed line drivers, power management/power supply and switching applications.
Small Signal Power MOSFETs
Infineon Small Signal Power MOSFETs are available in 7 industry-standard package types ranging from the largest SOT-223 down to the smallest SOT-363 measuring 2.1mm x 2mm x 0.9mm. These are offered in single, dual and complementary configurations. They are available in N-Channel, P-Channel or Complementary (both P-Channel and N-Channel within the same package) versions to meet a variety of design requirements. Typical applications for these devices include battery protection, LED lighting, low voltage drives, and DC/DC converters. Each of these Small Signal Power MOSFETs are also qualified to Automotive AEC Q101.Learn More
Parte # Mfg. Descripción Valores Precio
BSS84PWH6327XTSA1
DISTI # V72:2272_06391493
Infineon Technologies AGTrans MOSFET P-CH 60V 0.15A Automotive 3-Pin SOT-323 T/R
RoHS: Compliant
17476
  • 15000:$0.0332
  • 6000:$0.0369
  • 3000:$0.0410
  • 1000:$0.0572
  • 500:$0.0848
  • 250:$0.0857
  • 100:$0.0866
  • 25:$0.2095
  • 10:$0.2116
  • 1:$0.3230
BSS84PWH6327XTSA1
DISTI # BSS84PWH6327XTSA1TR-ND
Infineon Technologies AGMOSFET P-CH 60V 150MA SOT-323
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 3000:$0.0633
BSS84PWH6327XTSA1
DISTI # BSS84PWH6327XTSA1CT-ND
Infineon Technologies AGMOSFET P-CH 60V 150MA SOT-323
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$0.0722
  • 500:$0.1062
  • 100:$0.1983
  • 10:$0.3540
  • 1:$0.3900
BSS84PWH6327XTSA1
DISTI # BSS84PWH6327XTSA1DKR-ND
Infineon Technologies AGMOSFET P-CH 60V 150MA SOT-323
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$0.0722
  • 500:$0.1062
  • 100:$0.1983
  • 10:$0.3540
  • 1:$0.3900
BSS84PWH6327XTSA1
DISTI # 31016292
Infineon Technologies AGTrans MOSFET P-CH 60V 0.15A Automotive 3-Pin SOT-323 T/R
RoHS: Compliant
17476
  • 1000:$0.0505
  • 500:$0.0848
  • 251:$0.0857
BSS84PWH6327XTSA1
DISTI # BSS84PWH6327XTSA1
Infineon Technologies AGTrans MOSFET P-CH 60V 0.15A 3-Pin SOT-323 T/R - Tape and Reel (Alt: BSS84PWH6327XTSA1)
RoHS: Compliant
Min Qty: 18000
Container: Reel
Americas - 0
  • 18000:$0.0288
  • 24000:$0.0278
  • 42000:$0.0268
  • 90000:$0.0259
  • 180000:$0.0254
BSS84PWH6327XTSA1
DISTI # 68AC4436
Infineon Technologies AGMOSFET, P-CH, -60V, -0.15A, SOT-323-3,Transistor Polarity:P Channel,Continuous Drain Current Id:-150mA,Drain Source Voltage Vds:-60V,On Resistance Rds(on):4.6ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.5V,Power RoHS Compliant: Yes0
  • 1:$0.3400
  • 10:$0.2250
  • 25:$0.1810
  • 50:$0.1380
  • 100:$0.0940
  • 250:$0.0840
  • 500:$0.0740
  • 1000:$0.0640
BSS84PWH6327XTSA1Infineon Technologies AGSmall Signal Field-Effect Transistor, 0.15A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
3876
  • 1:$0.0300
  • 25:$0.0300
  • 100:$0.0300
  • 500:$0.0300
  • 1000:$0.0300
BSS84PWH6327XTSA1
DISTI # 726-BSS84PWH6327XTSA
Infineon Technologies AGMOSFET P-Ch -60V 150mA SOT-323-3
RoHS: Compliant
113791
  • 1:$0.3400
  • 10:$0.2250
  • 100:$0.0940
  • 1000:$0.0640
  • 3000:$0.0500
BSS84PWH6327XT
DISTI # 726-BSS84PWH6327XT
Infineon Technologies AGMOSFET P-Ch -60V 150mA SOT-323-3
RoHS: Compliant
18085
  • 1:$0.3400
  • 10:$0.2250
  • 100:$0.0940
  • 1000:$0.0640
  • 3000:$0.0500
BSS84PW H6327
DISTI # 726-BSS84PWH6327
Infineon Technologies AGMOSFET P-Ch -60V 150mA SOT-323-3
RoHS: Compliant
4000
  • 1:$0.3400
  • 10:$0.2250
  • 100:$0.0940
  • 1000:$0.0640
  • 3000:$0.0500
BSS84PWH6327XTSA1
DISTI # 2480656
Infineon Technologies AGMOSFET, P-CH, -60V, -0.15A, SOT-323-3
RoHS: Compliant
0
  • 5:£0.2010
  • 25:£0.1940
  • 100:£0.0791
  • 250:£0.0734
  • 500:£0.0640
BSS84PWH6327XTSA1
DISTI # 2480656
Infineon Technologies AGMOSFET, P-CH, -60V, -0.15A, SOT-323-3
RoHS: Compliant
0
  • 1:$0.5380
  • 10:$0.3560
  • 100:$0.1500
  • 1000:$0.1010
  • 3000:$0.0790
BSS84PWH6327XTSA1
DISTI # C1S322000321443
Infineon Technologies AGTrans MOSFET P-CH 60V 0.15A Automotive 3-Pin SOT-323 T/R
RoHS: Compliant
6000
  • 3000:$0.0475
BSS84PWH6327XTSA1
DISTI # C1S322000413753
Infineon Technologies AGTrans MOSFET P-CH 60V 0.15A Automotive 3-Pin SOT-323 T/R
RoHS: Compliant
19226
  • 250:$0.0857
  • 100:$0.0866
Imagen Parte # Descripción
BSS138

Mfr.#: BSS138

OMO.#: OMO-BSS138

MOSFET SOT-23 N-CH LOGIC
BSS123

Mfr.#: BSS123

OMO.#: OMO-BSS123

MOSFET SOT-23 N-CH LOGIC
RC0603FR-071KL

Mfr.#: RC0603FR-071KL

OMO.#: OMO-RC0603FR-071KL

Thick Film Resistors - SMD 1K OHM 1%
885012106022

Mfr.#: 885012106022

OMO.#: OMO-885012106022

Multilayer Ceramic Capacitors MLCC - SMD/SMT WCAP-CSGP 1uF 0603 20% 25V MLCC
RC0603FR-073K3L

Mfr.#: RC0603FR-073K3L

OMO.#: OMO-RC0603FR-073K3L

Thick Film Resistors - SMD 3.3K OHM 1%
BSS123

Mfr.#: BSS123

OMO.#: OMO-BSS123-ON-SEMICONDUCTOR

MOSFET N-CH 100V 170MA SOT-23
BSS138

Mfr.#: BSS138

OMO.#: OMO-BSS138-ON-SEMICONDUCTOR

MOSFET N-CH 50V 220MA SOT-23
RC0603FR-07330RL

Mfr.#: RC0603FR-07330RL

OMO.#: OMO-RC0603FR-07330RL-YAGEO

Thick Film Resistors - SMD 330 OHM 1%
RC0603FR-07100RL

Mfr.#: RC0603FR-07100RL

OMO.#: OMO-RC0603FR-07100RL-YAGEO

Thick Film Resistors - SMD 100 OHM 1%
RC0603FR-07100KL

Mfr.#: RC0603FR-07100KL

OMO.#: OMO-RC0603FR-07100KL-YAGEO

Thick Film Resistors - SMD 100K OHM 1%
Disponibilidad
Valores:
91
En orden:
2074
Ingrese la cantidad:
El precio actual de BSS84PWH6327XTSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,33 US$
0,33 US$
10
0,22 US$
2,25 US$
100
0,09 US$
9,40 US$
1000
0,06 US$
64,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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