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FDS6982S

FDS6982S
Mfr. #:
FDS6982S
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET SO-8 DUAL N-CH
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDS6982S Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SO-8
Número de canales:
2 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
6.3 A
Rds On - Resistencia de la fuente de drenaje:
16 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
2 W
Configuración:
Doble
Modo de canal:
Mejora
Embalaje:
Carrete
Altura:
1.75 mm
Longitud:
4.9 mm
Serie:
FDS6982S
Tipo de transistor:
2 N-Channel
Escribe:
MOSFET
Ancho:
3.9 mm
Marca:
ON Semiconductor / Fairchild
Otoño:
7 ns, 14 ns
Tipo de producto:
MOSFET
Hora de levantarse:
14 ns, 10 ns
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
21 ns, 34 ns
Tiempo típico de retardo de encendido:
10 ns
Parte # Alias:
FDS6982S_NL
Unidad de peso:
0.008127 oz
Tags
FDS6982S, FDS6982, FDS698, FDS69, FDS6, FDS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET Array Dual N-CH 30V 6.3A/8.6A 8-Pin SOIC T/R
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel / Schottky Diode; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:8.6A; On Resistance, Rds(on):13.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, DUAL, NN, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:8.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):16mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Cont Current Id N Channel 2:6.3A; Cont Current Id N Channel 3:8.6A; Current Id Max:8.6A; Current Temperature:25°C; Forward Current If(AV):3A; Forward Voltage VF Max:700mV; Full Power Rating Temperature:25°C; No. of Transistors:2; On State Resistance Channel 1:28mohm; On State Resistance N Channel 2:16mohm; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:30A; Pulse Current Idm N Channel 2:20A; Pulse Current Idm N Channel 3:30A; SMD Marking:FDS6982S; Termination Type:SMD; Voltage Vds N Channel 1:30V; Voltage Vds N Channel 2:30V; Voltage Vds Typ:30V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V; Voltage Vgs th Min:1V
***(Formerly Allied Electronics)
SI4936BDY-T1-E3 Dual N-channel MOSFET Transistor; 5.9 A; 30 V; 8-Pin SOIC
***ure Electronics
Dual N-Channel 30 V 0.035 Ohms Surface Mount Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N-CH 30V 6.9A 8-Pin SOIC N T/R / MOSFET 2N-CH 30V 6.9A 8-SOIC
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:6900mA; On Resistance, Rds(on):0.051ohm; Rds(on) Test Voltage, Vgs:20V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, DUAL, N, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:6.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Base Number:4936; Current Id Max:6.9A; N-channel Gate Charge:4.5nC; On State Resistance @ Vgs = 4.5V:51mohm; On State resistance @ Vgs = 10V:35mohm; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
***p One Stop Global
Trans MOSFET N-CH 30V 8.9A 8-Pin SOIC N T/R
***enic
30V 8.9A 11m´Î@10V12A 1.4W 3V@250Ã×A N Channel SOIC-8_150mil MOSFETs ROHS
***S
French Electronic Distributor since 1988
***ment14 APAC
N CHANNEL MOSFET, 30V, 12A; Transistor P; N CHANNEL MOSFET, 30V, 12A; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:30V; On Resistance Rds(on):16mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:3V; No. of Pins:8
***ure Electronics
Dual N-Channel 30 V 0.028 Ohm Enhancement Mode MOSFET - SOIC-8
***et Europe
Transistor MOSFET Array Dual N-CH 30V 7.1A 8-Pin SOIC T/R
***nell
MOSFET, NN, SO-8; Module Configuration:Dual N Channel; Transistor Polarity:Dual N; Max Current Id:7.1A; Max Voltage Vds:30V; On State Resistance:0.028ohm; Rds Measurement Voltage:10V; Typ Voltage Vgs th:3V; Power Dissipation:2.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; Case Style:SOIC; Termination Type:SMD; Transistor Type:MOSFET; Cont Current Id:7.1A; Max Voltage Vgs:20V; Min Voltage Vgs th:1V; On State Resistance @ Vgs = 4.5V:0.045ohm; On State resistance @ Vgs = 10V:0.028ohm; Pulse Current Idm:33.6A; Typ Voltage Vds:30V; Voltage Vgs Rds on Measurement:10V
***et
Transistor MOSFET Array Dual N-Channel 30V 6.3A/8.6A 8-Pin SOIC N T/R
***nell
MOSFET, DUAL, NN, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 8.6A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.021ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.2V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Cont Current Id N Channel 2: 8.6A; Cont Current Id N Channel 3: 6.3A; Current Id Max: 8.6A; No. of Transistors: 2; On State Resistance Channel 1: 15mohm; On State Resistance N Channel 2: 28mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation N Channel 2: 2W; Power Dissipation N Channel 3: 2W; Pulse Current Idm: 30A; Pulse Current Idm N Channel 2: 30A; Pulse Current Idm N Channel 3: 20A; SMD Marking: FDS6982; Voltage Vds N Channel 1: 30V; Voltage Vds N Channel 2: 30V; Voltage Vds Typ: 30V; Voltage Vgs Max: 2.2V
***rchild Semiconductor
This part is designed to replace two single SO-8 MOSFETs in synchronous DC:DC power supplies that provide the various peripheral voltage rails required in notebook computers and other battery powered electronic devices. FDS6982 contains two unique 30V, N-channel, logic level, PowerTrench® MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized for low conduction losses (less than 20mW at VGS = 4.5V).
***ark
Mosfet Transistor, N Channel, 10.8 A, 30 V, 0.011 Ohm, 4.5 V, 3 V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 11 Milliohms;ID 10.8A;SO-8;PD 2.5W;VGS +/-20
***eco
Transistor MOSFET N Channel 30 Volt 10.8.6 Amp 8 Pin SOIC
***ure Electronics
Single N-Channel 30 V 14 mOhm 17 nC HEXFET® Power Mosfet - SOIC-8
***S.I.T. Europe - USA - Asia
Small Signal Field-Effect Transistor, 10.8A I(D), 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.8A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 3V; Power Dissi
***et Japan
Transistor MOSFET Array Dual N-CH 30V 6.9A 8-Pin SOIC T/R
***ineon SCT
Automotive Q101 30V Dual N-Channel HEXFET Power MOSFET in a SO-8 Package, SO8, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 6.9A I(D), N-Channel, Metal-oxide Semiconductor FET
***nell
MOSFET, AUTO, DUAL N-CH, 30V, SOIC-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 6.9A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.023ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 2.4W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
Parte # Mfg. Descripción Valores Precio
FDS6982S
DISTI # FDS6982S-ND		ON SemiconductorMOSFET 2N-CH 30V 6.3A/8.6A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    FDS6982S
    DISTI # 34C0179    		ON SemiconductorN CHANNEL / SCHOTTKY MOSFET, 30V, SOIC, FULL REEL,Transistor Polarity:Dual N Channel + Schottky,Continuous Drain Current Id:8.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.012ohm,Rds(on) Test Voltage Vgs:10V , RoHS Compliant: Yes0
      FDS6982S
      DISTI # 512-FDS6982S      		ON SemiconductorMOSFET SO-8 DUAL N-CH
      RoHS: Compliant      		0
        FDS6982S_Q
        DISTI # 512-FDS6982S_Q        		ON SemiconductorMOSFET SO-8 DUAL N-CH
        RoHS: Not compliant        		0
          FDS6982S_D84Z
          DISTI # 512-FDS6982S_D84Z          		ON SemiconductorMOSFET NChannel PowerTrench Notebook Power
          RoHS: Not compliant          		0
            FDS6982SFairchild Semiconductor CorporationPower Field-Effect Transistor, 6.3A I(D), 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
            RoHS: Compliant            		85
            • 1000:$1.2700
            • 500:$1.3300
            • 100:$1.3900
            • 25:$1.4500
            • 1:$1.5600
            FDS6982SFreescale SemiconductorMOSFET Transistor, Matched Pair, N-Channel, SO4731
            • 3172:$0.4515
            • 1489:$0.4730
            • 1:$1.7200
            FDS6982SFairchild Semiconductor CorporationMOSFET Transistor, Matched Pair, N-Channel, SO2643
            • 1489:$0.4730
            • 333:$0.5375
            • 1:$1.7200
            FDS6982SFairchild Semiconductor CorporationMOSFET Transistor, Matched Pair, N-Channel, SO8
            • 9:$2.5000
            • 2:$3.0000
            • 1:$4.0000
            FDS6982SFairchild Semiconductor Corporation 1590
              FDS6982SFairchild Semiconductor Corporation 2272
                FDS6982SFairchild Semiconductor Corporation 3715
                  FDS6982SFairchild Semiconductor Corporation 1259
                    FDS6982SFairchild Semiconductor CorporationINSTOCK1640
                      FDS6982S
                      DISTI # 9844759                      		ON Semiconductor 
                      RoHS: Compliant                      		0
                      • 1:$4.1400
                      • 25:$3.2500
                      • 100:$2.6900
                      • 250:$1.9800
                      Imagen Parte # Descripción
                      FDS6982S

                      Mfr.#: FDS6982S

                      OMO.#: OMO-FDS6982S

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                      FDS6609A

                      Mfr.#: FDS6609A

                      OMO.#: OMO-FDS6609A

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                      FDS6690AS

                      Mfr.#: FDS6690AS

                      OMO.#: OMO-FDS6690AS-ON-SEMICONDUCTOR

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                      FDS6375-NF40

                      Mfr.#: FDS6375-NF40

                      OMO.#: OMO-FDS6375-NF40-1190

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                      FDS6575-NL

                      Mfr.#: FDS6575-NL

                      OMO.#: OMO-FDS6575-NL-1190

                      		 Nuevo y original
                      FDS6894AZ-NL

                      Mfr.#: FDS6894AZ-NL

                      OMO.#: OMO-FDS6894AZ-NL-1190

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                      FDS6910

                      Mfr.#: FDS6910

                      OMO.#: OMO-FDS6910-ON-SEMICONDUCTOR

                      		 MOSFET 2N-CH 30V 7.5A 8SOIC
                      FDS6910-NL

                      Mfr.#: FDS6910-NL

                      OMO.#: OMO-FDS6910-NL-1190

                      		 Nuevo y original
                      FDS6986S-NBBM019A

                      Mfr.#: FDS6986S-NBBM019A

                      OMO.#: OMO-FDS6986S-NBBM019A-1190

                      		 Nuevo y original
                      FDS6690AS-CUT TAPE

                      Mfr.#: FDS6690AS-CUT TAPE

                      OMO.#: OMO-FDS6690AS-CUT-TAPE-1190

                      		 Nuevo y original
                      Disponibilidad
                      Valores:
                      Available
                      En orden:
                      4500
                      Ingrese la cantidad:
                      El precio actual de FDS6982S es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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