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IRF7603PBF

IRF7603PBF
Mfr. #:
IRF7603PBF
Fabricante:
Infineon Technologies AG
Descripción:
MOSFET, N, MICRO-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF7603PBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
IRF7603, IRF760, IRF76, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N, MICRO-8; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:5.6A; Resistance, Rds On:0.135ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1V; Case Style:Micro8; Termination ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, MICRO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:5.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):135mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:1.8W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:µSOIC; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Capacitance Ciss Typ:520pF; Charge Qrr @ Tj = 25°C Typ:87nC; Current Id Max:5.6A; Current Temperature:25°C; External Depth:5.03mm; External Length / Height:1.11mm; External Width:3.05mm; Full Power Rating Temperature:25°C; Gfs Min:4.3A/V; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Lead Spacing:0.65mm; No. of Transistors:1; On State Resistance Max:135mohm; Package / Case:Micro8; Power Dissipation Pd:1.8W; Power Dissipation Pd:1.8W; Pulse Current Idm:30A; Rate of Voltage Change dv / dt:5V/ns; Reverse Recovery Time trr Typ:53ns; Row Pitch:4.24mm; SMD Marking:7603; Voltage Vds:30V; Voltage Vds Typ:30V
Parte # Mfg. Descripción Valores Precio
IRF7603PBF
DISTI # 9102809		Infineon Technologies AGMOSFET, N, MICRO-8
RoHS: Compliant		0
  • 1:$0.7280
  • 10:$0.6000
  • 100:$0.4860
  • 250:$0.4340
  • 500:$0.3850
  • 1000:$0.3580
  • 4000:$0.3460
  • 8000:$0.3240
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Disponibilidad
Valores:
Available
En orden:
5500
Ingrese la cantidad:
El precio actual de IRF7603PBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
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Ext. Precio
1
0,00 US$
0,00 US$
10
0,00 US$
0,00 US$
100
0,00 US$
0,00 US$
500
0,00 US$
0,00 US$
1000
0,00 US$
0,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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