BLL6H1214-500

BLL6H1214-500
Mfr. #:
BLL6H1214-500
Fabricante:
NXP Semiconductors
Descripción:
LDMOS,RF,500W,1200M-1400MHZ,50V, Drain Source Voltage Vds:100V, Continuous Drain Current Id:45A, Power Dissipation Pd:500W, Operating Frequency Min:1.03GHz, Operating Frequency Max:1.09GHz, RF T
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BLL6H1214-500 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
BLL6H1214-500 más información BLL6H1214-500 Product Details
Atributo del producto
Valor de atributo
Tags
BLL6H1214-5, BLL6H1, BLL6H, BLL6, BLL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ponent Stockers USA
2 CHANNEL L BAND Si N-CHANNEL RF POWER MOSFET
***ark
Ldmos,rf,500W,1200M-1400Mhz,50V; Drain Source Voltage Vds:100V; Continuous Drain Current Id:45A; Power Dissipation Pd:500W; Operating Frequency Min:1.03Ghz; Operating Frequency Max:1.09Ghz; Rf Transistor Case:sot-539A; Msl:- Rohs Compliant: Yes
Parte # Mfg. Descripción Valores Precio
BLL6H1214-500112
DISTI # V36:1790_16135102
AmpleonBLL6H1214-500/SOT539/TRAY
RoHS: Compliant
0
  • 60000:$493.2800
  • 30000:$493.3100
  • 6000:$508.9200
  • 600:$558.4000
  • 60:$568.3800
BLL6H1214-500,112
DISTI # 568-7559-ND
AmpleonRF FET LDMOS 100V 17DB SOT539A
RoHS: Compliant
Min Qty: 1
Container: Tray
1In Stock
  • 1:$568.3800
BLL6H1214-500,112
DISTI # BLL6H1214-500,112
AmpleonTrans MOSFET N-CH 100V 72A 5-Pin LDMOST Blister - Rail/Tube (Alt: BLL6H1214-500,112)
RoHS: Compliant
Min Qty: 20
Container: Tube
Americas - 0
    BLL6H1214-500
    DISTI # 18T7208
    NXP SemiconductorsLDMOS,RF,500W,1200M-1400MHZ,50V,Drain Source Voltage Vds:100V,Continuous Drain Current Id:45A,Power Dissipation Pd:500W,Operating Frequency Min:1.03GHz,Operating Frequency Max:1.09GHz,RF Transistor Case:SOT-539A,MSL:- RoHS Compliant: Yes0
      BLL6H1214-500,112
      DISTI # 70R2890
      NXP SemiconductorsN CHANNEL L-BAND LDMOS TRANSISTOR, 50V, 1200MHZ - 1400MHZ, 2-SOT-539A,Drain Source Voltage Vds:50V,Continuous Drain Current Id:45A,Power Dissipation Pd:500W,Operating Frequency Min:1.2GHz,Operating Frequency Max:1.4GHz,MSL:- RoHS Compliant: Yes0
        Imagen Parte # Descripción
        BLL6H1214-500

        Mfr.#: BLL6H1214-500

        OMO.#: OMO-BLL6H1214-500-NXP-SEMICONDUCTORS

        LDMOS,RF,500W,1200M-1400MHZ,50V, Drain Source Voltage Vds:100V, Continuous Drain Current Id:45A, Power Dissipation Pd:500W, Operating Frequency Min:1.03GHz, Operating Frequency Max:1.09GHz, RF T
        BLL6H1214L-250

        Mfr.#: BLL6H1214L-250

        OMO.#: OMO-BLL6H1214L-250-NXP-SEMICONDUCTORS

        Nuevo y original
        BLL6H1214L-250112

        Mfr.#: BLL6H1214L-250112

        OMO.#: OMO-BLL6H1214L-250112-1190

        Now Ampleon, BLL6H1214L-250, LDMOS L-band radar power transistor, SOT502 (LDMOST)
        BLL6H1214LS-250

        Mfr.#: BLL6H1214LS-250

        OMO.#: OMO-BLL6H1214LS-250-NXP-SEMICONDUCTORS

        Nuevo y original
        BLL6H1214LS-25011

        Mfr.#: BLL6H1214LS-25011

        OMO.#: OMO-BLL6H1214LS-25011-1190

        Nuevo y original
        BLL6H1214LS-500

        Mfr.#: BLL6H1214LS-500

        OMO.#: OMO-BLL6H1214LS-500-1190

        Nuevo y original
        BLL6H1214LS-50011

        Mfr.#: BLL6H1214LS-50011

        OMO.#: OMO-BLL6H1214LS-50011-1152

        RF Components - Rail/Tube (Alt: BLL6H1214LS-500,11)
        BLL6H1214-500,112

        Mfr.#: BLL6H1214-500,112

        OMO.#: OMO-BLL6H1214-500-112-AMPLEON

        RF MOSFET Transistors TRANS L-BAND RADAR LDMOS
        BLL6H1214LS-250,11

        Mfr.#: BLL6H1214LS-250,11

        OMO.#: OMO-BLL6H1214LS-250-11-AMPLEON

        RF MOSFET Transistors Single 100V 42A 100mOhms
        BLL6H1214P2S-250Z

        Mfr.#: BLL6H1214P2S-250Z

        OMO.#: OMO-BLL6H1214P2S-250Z-AMPLEON

        RF MOSFET Transistors LDMOS L-band radar power module
        Disponibilidad
        Valores:
        Available
        En orden:
        3500
        Ingrese la cantidad:
        El precio actual de BLL6H1214-500 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        0,00 US$
        0,00 US$
        10
        0,00 US$
        0,00 US$
        100
        0,00 US$
        0,00 US$
        500
        0,00 US$
        0,00 US$
        1000
        0,00 US$
        0,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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