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SI8409DB-T1-E1

SI8409DB-T1-E1
Mfr. #:
SI8409DB-T1-E1
Fabricante:
Vishay
Descripción:
MOSFET P-CH 30V 4.6A 2X2 4-MFP
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI8409DB-T1-E1 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
SI8409DB-T1-E1 más información
Atributo del producto
Valor de atributo
Fabricante
Vishay Siliconix
categoria de producto
Chips de IC
Serie
TrincheraFETR
embalaje
Embalaje alternativo de Digi-ReelR
Alias ​​de parte
SI8409DB-E1
Estilo de montaje
SMD / SMT
Nombre comercial
TrenchFET / MICRO PIE
Paquete-Estuche
4-XFBGA, CSPBGA
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
1 Channel
Paquete de dispositivo de proveedor
4-Microfoot
Configuración
Drenaje doble simple
Tipo FET
Canal P MOSFET, óxido metálico
Potencia máxima
1.47W
Tipo transistor
1 P-Channel
Drenaje-a-fuente-voltaje-Vdss
30V
Entrada-Capacitancia-Ciss-Vds
-
Función FET
Estándar
Corriente-Continuo-Drenaje-Id-25 ° C
4.6A (Ta)
Rds-On-Max-Id-Vgs
46 mOhm @ 1A, 4.5V
Vgs-th-Max-Id
1.4V @ 250μA
Puerta-Carga-Qg-Vgs
26nC @ 4.5V
Disipación de potencia Pd
1.47 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
35 ns
Hora de levantarse
35 ns
Vgs-Puerta-Fuente-Voltaje
12 V
Id-corriente-de-drenaje-continua
- 3.6 A
Vds-Drain-Source-Breakdown-Voltage
- 30 V
Resistencia a la fuente de desagüe de Rds
1.052 Ohms
Polaridad del transistor
P-Channel
Tiempo de retardo de apagado típico
140 ns
Tiempo de retardo de encendido típico
20 ns
Qg-Gate-Charge
17 nC
Transconductancia directa-Mín.
6.4 S
Modo de canal
Mejora
Tags
SI840, SI84, SI8
Service Guarantees

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single P-Channel 30 V 46 mO 17 nC Surface Mount Power Mosfet - MICRO FOOT
***ical
Trans MOSFET P-CH Si 30V 4.6A 4-Pin Micro Foot T/R
*** Source Electronics
MOSFET P-CH 30V 4.6A 2X2 4-MFP
***i-Key
MOSFET P-CH 30V 4.6A 4MICROFOOT
***ark
P Ch Mosfet, -30V, 6.3A, Micro Foot; Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6.3A; On Resistance Rds(On):0.065Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:12V Rohs Compliant: No
MicroFoot® Power MOSFETs
Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices' low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.Learn More
Parte # Mfg. Descripción Valores Precio
SI8409DB-T1-E1
DISTI # V72:2272_09216553		Vishay IntertechnologiesTrans MOSFET P-CH Si 30V 4.6A 4-Pin Micro Foot T/R
RoHS: Compliant		4407
  • 3000:$0.4274
  • 1000:$0.4304
  • 500:$0.5504
  • 250:$0.6208
  • 100:$0.6226
  • 25:$0.7627
  • 10:$0.7658
  • 1:$0.8855
SI8409DB-T1-E1
DISTI # V36:1790_09216553		Vishay IntertechnologiesTrans MOSFET P-CH Si 30V 4.6A 4-Pin Micro Foot T/R
RoHS: Compliant		3000
  • 3000:$0.4304
SI8409DB-T1-E1
DISTI # SI8409DB-T1-E1CT-ND		Vishay SiliconixMOSFET P-CH 30V 4.6A 2X2 4-MFP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		13394In Stock
  • 1000:$0.5438
  • 500:$0.6889
  • 100:$0.8883
  • 10:$1.1240
  • 1:$1.2700
SI8409DB-T1-E1
DISTI # SI8409DB-T1-E1DKR-ND		Vishay SiliconixMOSFET P-CH 30V 4.6A 2X2 4-MFP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		13394In Stock
  • 1000:$0.5438
  • 500:$0.6889
  • 100:$0.8883
  • 10:$1.1240
  • 1:$1.2700
SI8409DB-T1-E1
DISTI # SI8409DB-T1-E1TR-ND		Vishay SiliconixMOSFET P-CH 30V 4.6A 2X2 4-MFP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		12000In Stock
  • 3000:$0.4928
SI8409DB-T1-E1
DISTI # 27003823		Vishay IntertechnologiesTrans MOSFET P-CH Si 30V 4.6A 4-Pin Micro Foot T/R
RoHS: Compliant		4407
  • 3000:$0.4274
  • 1000:$0.4304
  • 500:$0.5504
  • 250:$0.6208
  • 100:$0.6226
  • 25:$0.7627
  • 16:$0.7658
SI8409DB-T1-E1
DISTI # 29546570		Vishay IntertechnologiesTrans MOSFET P-CH Si 30V 4.6A 4-Pin Micro Foot T/R
RoHS: Compliant		3000
  • 3000:$0.4867
SI8409DB-T1-E1
DISTI # 30743480		Vishay IntertechnologiesTrans MOSFET P-CH Si 30V 4.6A 4-Pin Micro Foot T/R
RoHS: Compliant		3000
  • 3000:$0.4304
SI8409DB-T1-E1
DISTI # SI8409DB-T1-E1		Vishay IntertechnologiesTrans MOSFET P-CH 30V 4.6A 4-Pin Micro Foot T/R - Tape and Reel (Alt: SI8409DB-T1-E1)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.4649
  • 6000:$0.4509
  • 12000:$0.4329
  • 18000:$0.4209
  • 30000:$0.4099
SI8409DB-T1-E1
DISTI # 18X0030		Vishay IntertechnologiesMOSFET, P CHANNEL, -30V, -4.6A, MICRO FOOT-4,Transistor Polarity:P Channel,Continuous Drain Current Id:-4.6A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.038ohm,Rds(on) Test Voltage Vgs:-4.5V,Power Dissipation Pd:1.47W, RoHS Compliant: Yes0
  • 1:$1.1200
  • 10:$0.9220
  • 25:$0.8510
  • 50:$0.7790
  • 100:$0.7080
  • 500:$0.6090
  • 1000:$0.4800
SI8409DB-T1-E1
DISTI # 51K7013		Vishay IntertechnologiesP CH MOSFET, -30V, 6.3A, MICRO FOOT,Transistor Polarity:P Channel,Continuous Drain Current Id:-6.3A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):65mohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:1.4V , RoHS Compliant: Yes0
  • 1:$0.4480
  • 3000:$0.4480
SI8409DB-T1-E1.
DISTI # 30AC0210		Vishay IntertechnologiesP-CHANNEL 30-V (D-S) MOSFET , ROHS COMPLIANT: NO0
  • 1:$0.4480
  • 3000:$0.4480
SI8409DB-T1-E1Vishay IntertechnologiesSingle P-Channel 30 V 46 mO 17 nC Surface Mount Power Mosfet - MICRO FOOT
RoHS: Compliant		6000Reel
  • 3000:$0.4050
SI8409DB-T1-E1
DISTI # 781-SI8409DB-E1		Vishay IntertechnologiesMOSFET -30V Vds 12V Vgs MICRO FOOT 1.6 x 1.6
RoHS: Compliant		4620
  • 1:$1.1200
  • 10:$0.9220
  • 100:$0.7080
  • 500:$0.6090
  • 1000:$0.4800
  • 3000:$0.4480
SI8409DB-T1-E1Vishay Semiconductors4600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET2340
  • 2052:$0.3750
  • 445:$0.3900
  • 1:$1.5000
SI8409DB-T1-E1Vishay Siliconix 2925
  • 5:$1.1250
  • 19:$0.7313
  • 70:$0.4219
  • 239:$0.3600
  • 515:$0.3150
  • 1224:$0.2925
SI8409DB-T1-E1
DISTI # XSFP00000107897		Vishay Siliconix 
RoHS: Compliant		4038
  • 3000:$0.8100
  • 4038:$0.7364
SI8409DB-T1-E1
DISTI # C1S803601003786		Vishay IntertechnologiesMOSFETs
RoHS: Compliant		4407
  • 250:$0.6193
  • 100:$0.6210
  • 25:$0.7598
  • 10:$0.7629
SI8409DB-T1-E1
DISTI # C1S803601906641		Vishay IntertechnologiesMOSFETs
RoHS: Compliant		3000
  • 3000:$0.4299
SI8409DB-T1-E1Vishay IntertechnologiesMOSFET -30V Vds 12V Vgs MICRO FOOT 1.6 x 1.6
RoHS: Compliant		Americas - 6000
    Imagen Parte # Descripción
    SI8409DB-T1-E1

    Mfr.#: SI8409DB-T1-E1

    OMO.#: OMO-SI8409DB-T1-E1

    		 MOSFET -30V Vds 12V Vgs MICRO FOOT 1.6 x 1.6
    SI8409DB-T1-E1

    Mfr.#: SI8409DB-T1-E1

    OMO.#: OMO-SI8409DB-T1-E1-VISHAY

    		 MOSFET P-CH 30V 4.6A 2X2 4-MFP
    Disponibilidad
    Valores:
    Available
    En orden:
    1500
    Ingrese la cantidad:
    El precio actual de SI8409DB-T1-E1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,44 US$
    0,44 US$
    10
    0,42 US$
    4,17 US$
    100
    0,39 US$
    39,49 US$
    500
    0,37 US$
    186,45 US$
    1000
    0,35 US$
    351,00 US$
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