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STP100N6F7

STP100N6F7
Mfr. #:
STP100N6F7
Fabricante:
STMicroelectronics
Descripción:
MOSFET N-channel 60 V, 4.7 mOhm typ., 100 A STripFET F7 Power MOSFET in a TO-220 package
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STP100N6F7 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
STP100N6F7 DatasheetSTP100N6F7 Datasheet (P4-P6)STP100N6F7 Datasheet (P7-P9)STP100N6F7 Datasheet (P10-P12)STP100N6F7 Datasheet (P13)
ECAD Model:
Más información:
STP100N6F7 más información STP100N6F7 Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
60 V
Id - Corriente de drenaje continua:
100 A
Rds On - Resistencia de la fuente de drenaje:
5.6 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2 V
Vgs - Voltaje puerta-fuente:
10 V
Qg - Carga de puerta:
30 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
125 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
STripFET
Embalaje:
Tubo
Serie:
STP100N6F7
Tipo de transistor:
1 N-Channel Power MOSFET
Marca:
STMicroelectronics
Otoño:
15 ns
Tipo de producto:
MOSFET
Hora de levantarse:
55.5 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
28.6 ns
Tiempo típico de retardo de encendido:
21.6 ns
Unidad de peso:
0.011640 oz
Tags
STP100N, STP100, STP10, STP1, STP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 60 V, 4.7 mOhm typ., 100 A STripFET F7 Power MOSFET in a TO-220 package
***ical
Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-220AB Tube
***enic
60V 100A 5.6m´Î@10V50A 125W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***ark
MOSFET, N-CH, 60V, 100A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:100A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 100A I(D), 60V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS
***ure Electronics
Single N-Channel 60 V 5.1 mOhm 88 nC HEXFET® Power Mosfet - TO-220-3
***Yang
Trans MOSFET N-CH 60V 110A 3-Pin TO-220AB Tube - Rail/Tube
***et
MOSFET, 60V, 110A, 5.1 MOHM, 88 NC QG, TO-220AB
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 160 W
*** Stop Electro
Power Field-Effect Transistor, 110A I(D), 60V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:110A; On Resistance Rds(On):0.0042Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V; Msl:- Rohs Compliant: Yes
***icroelectronics
N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power MOSFET in TO-220 package
***ical
Trans MOSFET N-CH 60V 80A 3-Pin(3+Tab) TO-220AB Tube
***ark
Mosfet, N-Ch, 60V, 80A, 175Deg C; Transistor Polarity:n Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0042Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ical
Trans MOSFET N-CH 60V 98A 3-Pin(3+Tab) TO-220 Tube
***et
MOSFET BVDSS: 41V~60V TO220-3 TUBE 50PCS
***des Inc SCT
60V N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
***ure Electronics
STP80N6F6: 60 V 5 mOhm 80 A N-Channel STripFET™ VI DeepGATE™ Power MOSFET-TO-220
***ical
Trans MOSFET N-CH 60V 80A Automotive 3-Pin(3+Tab) TO-220AB Tube
***r Electronics
Power Field-Effect Transistor, 110A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***eco
MOSFET Transistor N-Channel 60 V 95A (Tc) 125W (Tc) Through Hole TO-220
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS
***ure Electronics
Single N-Channel 60 V 5.9 mOhm 75 nC HEXFET® Power Mosfet - TO-220-3
***Yang
Trans MOSFET N-CH 60V 95A 3-Pin TO-220AB Tube - Rail/Tube
***et
MOSFET, 60V, 95A, 5.9 MOHM, 75 NC QG, TO-220AB
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
***ical
Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-220 Tube
***et
MOSFET BVDSS: 41V~60V TO220-3 TUBE 50PCS
***des Inc SCT
60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
STripFET Power MOSFETs
STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET™ technology with a new gate structure. The resulting STripFET™ Power MOSFET exhibits the high current and low RDS(on) required by automotive and industrial switching applications such as motor control, UPS, DC/DC converters, induction heater vaporizers and solar. STMicroelectronics STripFET™ Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses and high power density. These STripFET™ Power MOSFETs offer among the industry's lowest RDS(on) 30V-150V power MOSFETs in the market.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
STMicroelectronics STripFET VII Power MOSFETs
Parte # Mfg. Descripción Valores Precio
STP100N6F7
DISTI # 30746884		STMicroelectronicsTrans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		2340
  • 17:$0.6030
STP100N6F7
DISTI # 30608598		STMicroelectronicsTrans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		38
  • 31:$0.8075
STP100N6F7
DISTI # 497-15888-5-ND		STMicroelectronicsMOSFET N-CH 60V 100A F7 TO220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		1459In Stock
  • 5000:$0.7985
  • 2500:$0.8292
  • 500:$1.0749
  • 100:$1.3084
  • 50:$1.5356
  • 10:$1.6280
  • 1:$1.8100
STP100N6F7
DISTI # C1S730201016361		STMicroelectronicsMOSFETs38
  • 1:$0.6460
STP100N6F7
DISTI # V36:1790_13796892		STMicroelectronicsTrans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		0
  • 1000:$0.6814
STP100N6F7
DISTI # STP100N6F7		STMicroelectronicsPOWER MOSFET (Alt: STP100N6F7)
RoHS: Compliant
Min Qty: 50		Europe - 1950
  • 500:€0.5719
  • 300:€0.6159
  • 200:€0.6679
  • 100:€0.7279
  • 50:€0.8899
STP100N6F7
DISTI # STP100N6F7		STMicroelectronicsPOWER MOSFET (Alt: STP100N6F7)
RoHS: Compliant
Min Qty: 1000		Asia - 0
  • 50000:$0.4868
  • 25000:$0.5000
  • 10000:$0.5139
  • 5000:$0.5362
  • 3000:$0.5606
  • 2000:$0.5873
  • 1000:$0.6167
STP100N6F7
DISTI # STP100N6F7		STMicroelectronicsPOWER MOSFET - Rail/Tube (Alt: STP100N6F7)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 10000:$0.7469
  • 6000:$0.7619
  • 4000:$0.7979
  • 2000:$0.8349
  • 1000:$0.8769
STP100N6F7
DISTI # 45AC7686		STMicroelectronicsPOWER MOSFET - Bulk (Alt: 45AC7686)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 1000:$0.9350
  • 500:$1.1100
  • 100:$1.2500
  • 10:$1.5400
  • 1:$1.7900
STP100N6F7
DISTI # 45AC7686		STMicroelectronicsMOSFET, N-CH, 60V, 100A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0047ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V RoHS Compliant: Yes250
  • 1:$0.5070
  • 10:$0.5070
  • 100:$0.5070
  • 500:$0.5070
  • 1000:$0.5070
STP100N6F7
DISTI # 511-STP100N6F7		STMicroelectronicsMOSFET N-channel 60 V, 4.7 mOhm typ., 100 A STripFET F7 Power MOSFET in a TO-220 package
RoHS: Compliant		1815
  • 1:$1.7200
  • 10:$1.4600
  • 100:$1.1700
  • 500:$1.0200
  • 1000:$0.8490
  • 2000:$0.7900
  • 5000:$0.7610
  • 10000:$0.7320
STP100N6F7
DISTI # 9064680P		STMicroelectronicsMOSFET N-CH 60V100A STRIPFET F7 TO-220, TU1250
  • 200:£0.8120
  • 100:£0.8460
STP100N6F7
DISTI # STP100N6F7		STMicroelectronicsTransistor: N-MOSFET,unipolar,60V,75A,125W,TO220-37
  • 100:$0.8500
  • 25:$0.9500
  • 5:$1.1800
  • 1:$1.3600
STP100N6F7
DISTI # TMOSP12862		STMicroelectronicsN-CH 60V 100A 5,6mOhmTO220-3
RoHS: Compliant		Stock DE - 0Stock HK - 0Stock US - 0
  • 2000:$0.6744
STP100N6F7
DISTI # 2807208		STMicroelectronicsMOSFET, N-CH, 60V, 100A, TO-220AB955
  • 500:£0.7940
  • 250:£0.8520
  • 100:£0.9090
  • 10:£1.1800
  • 1:£1.5200
STP100N6F7
DISTI # 2807208		STMicroelectronicsMOSFET, N-CH, 60V, 100A, TO-220AB
RoHS: Compliant		925
  • 5000:$1.2400
  • 2500:$1.2500
  • 500:$1.6200
  • 100:$1.9800
  • 50:$2.3200
  • 5:$2.4600
Imagen Parte # Descripción
STP110N8F7

Mfr.#: STP110N8F7

OMO.#: OMO-STP110N8F7

 MOSFET N-channel 80 V, 6.4 mOhm typ., 80 A STripFET F7 Power MOSFET in a TO-220 package
VIPER011LS

Mfr.#: VIPER011LS

OMO.#: OMO-VIPER011LS

 AC/DC Converters VIPerPlus family: Low voltage energy saving fixed frequency high voltage converter
MBR40250TG

Mfr.#: MBR40250TG

OMO.#: OMO-MBR40250TG

 Schottky Diodes & Rectifiers 40A 250
142-0701-801

Mfr.#: 142-0701-801

OMO.#: OMO-142-0701-801

 RF Connectors / Coaxial Connectors PC END MT JCK GLD .062" BOARD THICK
NUCLEO-F446ZE

Mfr.#: NUCLEO-F446ZE

OMO.#: OMO-NUCLEO-F446ZE

 Development Boards & Kits - ARM STM32 Nucleo-144 development board with STM32F446ZE MCU, supports Arduino, ST Zio and morpho connectivity
NUCLEO-F767ZI

Mfr.#: NUCLEO-F767ZI

OMO.#: OMO-NUCLEO-F767ZI

 Development Boards & Kits - ARM STM32 Nucleo-144 development board with STM32F767ZI MCU, supports Arduino, ST Zio and morpho connectivity
NXFT15WB473FA2B060

Mfr.#: NXFT15WB473FA2B060

OMO.#: OMO-NXFT15WB473FA2B060-1150

 Thermistors - NTC 0402 47k ohm+/-1% 4050K +/-1%
EMHS500GRA471MKG5S

Mfr.#: EMHS500GRA471MKG5S

OMO.#: OMO-EMHS500GRA471MKG5S-UNITED-CHEMI-CON

 Aluminum Electrolytic Capacitors - SMD 470uF 20% 50V AEC-Q200
NUCLEO-F446ZE

Mfr.#: NUCLEO-F446ZE

OMO.#: OMO-NUCLEO-F446ZE-STMICROELECTRONICS

 STM32F446ZET6 Microcontroller Development Board 0.032768MHz CPU 512KB Flash
NUCLEO-F767ZI

Mfr.#: NUCLEO-F767ZI

OMO.#: OMO-NUCLEO-F767ZI-STMICROELECTRONICS

 STM32F767ZIT6 Microcontroller Development Board 0.032768MHz CPU 2MB Flash
Disponibilidad
Valores:
Available
En orden:
1984
Ingrese la cantidad:
El precio actual de STP100N6F7 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,72 US$
1,72 US$
10
1,46 US$
14,60 US$
100
1,17 US$
117,00 US$
500
1,02 US$
510,00 US$
1000
0,85 US$
849,00 US$
2000
0,79 US$
1 580,00 US$
5000
0,76 US$
3 805,00 US$
10000
0,73 US$
7 320,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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