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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| BF1108R,215 DISTI # 568-1958-2-ND | NXP Semiconductors | IC RF SWITCH SOT-143R RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BF1108R,215 DISTI # BF1108R215 | Avnet, Inc. | Trans JFET 3V 10mA 4-Pin(3+Tab) SOT-143R T/R - Bulk (Alt: BF1108R215) RoHS: Not Compliant Min Qty: 1250 Container: Bulk | Americas - 0 |
|
| BF1108R,215 DISTI # 771-BF1108R215 | NXP Semiconductors | RF MOSFET Transistors TAPE7 MOS-RFSS RoHS: Compliant | 1685 |
|
| BF1108R215 | NXP Semiconductors | RF Small Signal Field-Effect Transistor1-ElementUltra High Frequency Band,Silicon,N-Channel, MosFET RoHS: Not Compliant | 18000 |
|
| BF1108R,215 DISTI # BF1108R-215 | NXP Semiconductors | RF SMALL SIGNAL TRANSISTOR MOSFET RoHS: Compliant | 0 |
| Imagen | Parte # | Descripción |
|---|---|---|
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Mfr.#: BF1102+115 |
RF Small Signal Field-Effect Transistor 2-Element Ultra High Frequency Band, Silicon, N-Channel, MosFET |
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Mfr.#: BF1105WR115 |
RF Small Signal Field-Effect Transistor 1-Element Ultra High Frequency Band, Silicon, N-Channel, MosFET |
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Mfr.#: BF1108.215 OMO.#: OMO-BF1108-215-PHILIPS |
RF FET, 3V, SOT-143B, Drain Source Voltage Vds:3V, Continuous Drain Current Id:-, Power Dissipation Pd:-, Operating Frequency Min:-, Operating Frequency Max:-, RF Transistor Case:SOT-143B, No. |
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Mfr.#: BF1108R215 |
RF Small Signal Field-Effect Transistor 1-Element Ultra High Frequency Band, Silicon, N-Channel, MosFET |
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Mfr.#: BF1109R OMO.#: OMO-BF1109R-PHILIPS |
Nuevo y original |
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Mfr.#: BF1100WR,115 |
MOSFET N-CH 14V 30MA SOT343R |
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Mfr.#: BF1108 OMO.#: OMO-BF1108-1190 |
Nuevo y original |
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Mfr.#: BF1100R,235 |
RF MOSFET Transistors Dual N-Channel 14V 30mA 200mW |
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Mfr.#: BF1109,215 OMO.#: OMO-BF1109-215-319 |
RF MOSFET Transistors Dual N-Channel 11V 30mA 200mW |
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Mfr.#: BF1105,215 |
RF MOSFET Transistors Dual N-Channel 7V 30mA 200mW |