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FDD3860

FDD3860
Mfr. #:
FDD3860
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 100V N-Channel Power Trench
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDD3860 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
FDD3860 más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-252-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
100 V
Id - Corriente de drenaje continua:
6.2 A
Rds On - Resistencia de la fuente de drenaje:
36 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
3.1 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
PowerTrench
Embalaje:
Carrete
Altura:
2.39 mm
Longitud:
6.73 mm
Serie:
FDD3860
Tipo de transistor:
1 N-Channel
Ancho:
6.22 mm
Marca:
ON Semiconductor / Fairchild
Otoño:
7 ns
Tipo de producto:
MOSFET
Hora de levantarse:
10 ns
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
24 ns
Tiempo típico de retardo de encendido:
16 ns
Unidad de peso:
0.009171 oz
Tags
FDD38, FDD3, FDD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
PowerTrench® MOSFET, N-Channel, 100 V, 29 A, 36 mΩ
***et Europe
Trans MOSFET N-CH 100V 6.2A 3-Pin(2+Tab) DPAK T/R
***ark
TAPE REEL/100V N-Channel Power Trench MOSFET
***ment14 APAC
MOSFET, N-CH, 100V, 29A, TO-252-3
***rchild Semiconductor
Using Fairchild's proprietary high density trench MOSFET process, this part is tailored for low rDS(on) and low Qg figure of merit and with avalanche ruggedness for a wide range of switching applications.
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Parte # Mfg. Descripción Valores Precio
FDD3860
DISTI # V72:2272_06298605		ON Semiconductor100V N-CHANNEL POWER TRENCH MO1539
  • 1000:$0.5246
  • 500:$0.6206
  • 250:$0.6636
  • 100:$0.7373
  • 25:$0.8610
  • 10:$1.0523
  • 1:$1.2387
FDD3860
DISTI # V36:1790_06298605		ON Semiconductor100V N-CHANNEL POWER TRENCH MO0
  • 2500000:$0.4057
  • 1250000:$0.4060
  • 250000:$0.4381
  • 25000:$0.4971
  • 2500:$0.5072
FDD3860
DISTI # FDD3860CT-ND		ON SemiconductorMOSFET N-CH 100V 6.2A DPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3121In Stock
  • 1000:$0.5597
  • 500:$0.7089
  • 100:$0.8582
  • 10:$1.1010
  • 1:$1.2300
FDD3860
DISTI # FDD3860DKR-ND		ON SemiconductorMOSFET N-CH 100V 6.2A DPAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3121In Stock
  • 1000:$0.5597
  • 500:$0.7089
  • 100:$0.8582
  • 10:$1.1010
  • 1:$1.2300
FDD3860
DISTI # FDD3860TR-ND		ON SemiconductorMOSFET N-CH 100V 6.2A DPAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 12500:$0.4637
  • 5000:$0.4818
  • 2500:$0.5071
FDD3860
DISTI # 32925263		ON Semiconductor100V N-CHANNEL POWER TRENCH MO2500
  • 2500:$0.4003
FDD3860
DISTI # 31029177		ON Semiconductor100V N-CHANNEL POWER TRENCH MO1539
  • 17:$1.2387
FDD3860
DISTI # FDD3860		ON SemiconductorTrans MOSFET N-CH 100V 6.2A 3-Pin(2+Tab) DPAK T/R (Alt: FDD3860)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 7500
  • 25000:€0.3799
  • 15000:€0.4089
  • 10000:€0.4429
  • 5000:€0.4829
  • 2500:€0.5909
FDD3860
DISTI # FDD3860		ON SemiconductorTrans MOSFET N-CH 100V 6.2A 3-Pin(2+Tab) DPAK T/R (Alt: FDD3860)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
  • 125000:$0.4918
  • 62500:$0.5000
  • 25000:$0.5172
  • 12500:$0.5357
  • 7500:$0.5556
  • 5000:$0.5769
  • 2500:$0.6000
FDD3860
DISTI # FDD3860		ON SemiconductorTrans MOSFET N-CH 100V 6.2A 3-Pin(2+Tab) DPAK T/R - Bulk (Alt: FDD3860)
RoHS: Compliant
Min Qty: 642
Container: Bulk		Americas - 0
  • 6420:$0.4809
  • 3210:$0.4929
  • 1926:$0.4999
  • 1284:$0.5059
  • 642:$0.5089
FDD3860
DISTI # FDD3860		ON SemiconductorTrans MOSFET N-CH 100V 6.2A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FDD3860)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.5919
  • 15000:$0.6069
  • 10000:$0.6149
  • 5000:$0.6229
  • 2500:$0.6269
FDD3860
DISTI # 08N9273		ON SemiconductorMOSFET Transistor, N Channel, 29 A, 100 V, 0.029 ohm, 10 V, 3.8 V0
  • 25000:$0.4430
  • 10000:$0.4570
  • 2500:$0.4740
  • 1:$0.4770
FDD3860
DISTI # 31Y1356		ON SemiconductorMOSFET, N-CH, 100V, 29A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:29A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.029ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.8V RoHS Compliant: Yes171
  • 1000:$0.6070
  • 500:$0.7460
  • 250:$0.7890
  • 100:$0.8330
  • 50:$0.9080
  • 25:$0.9830
  • 10:$1.0600
  • 1:$1.2300
FDD3860
DISTI # 512-FDD3860		ON SemiconductorMOSFET 100V N-Channel Power Trench
RoHS: Compliant		3625
  • 1:$1.1400
  • 10:$0.9660
  • 100:$0.7420
  • 500:$0.6560
  • 1000:$0.5180
  • 2500:$0.4590
  • 10000:$0.4420
FDD3860Fairchild Semiconductor CorporationPower Field-Effect Transistor, 6.2A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
RoHS: Compliant		452210
  • 1000:$0.5100
  • 500:$0.5400
  • 100:$0.5600
  • 25:$0.5900
  • 1:$0.6300
FDD3860Fairchild Semiconductor Corporation 81
    FDD3860
    DISTI # 7599071P    		ON SemiconductorMOSFET N-CHANNEL 100V 6.2A DPAK, RL1205
    • 50:£0.4200
    FDD3860Fairchild Semiconductor CorporationPOWER FIELD-EFFECT TRANSISTOR, 6.2A I(D), 100V, 0.036OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252180
    • 72:$0.4900
    • 15:$0.7000
    • 1:$1.4000
    FDD3860
    DISTI # 2453848RL    		ON SemiconductorMOSFET, N-CH, 100V, 29A, TO-252-3
    RoHS: Compliant    		0
    • 10000:$0.6800
    • 2500:$0.7060
    • 1000:$0.7970
    • 500:$1.0100
    • 100:$1.1500
    • 10:$1.4900
    • 1:$1.7600
    FDD3860
    DISTI # 2453848    		ON SemiconductorMOSFET, N-CH, 100V, 29A, TO-252-3
    RoHS: Compliant    		0
    • 10000:$0.6800
    • 2500:$0.7060
    • 1000:$0.7970
    • 500:$1.0100
    • 100:$1.1500
    • 10:$1.4900
    • 1:$1.7600
    FDD3860
    DISTI # XSKDRABV0019225    		ON SEMICONDUCTOR 
    RoHS: Compliant    		7500 in Stock0 on Order
    • 7500:$0.5600
    • 2500:$0.6000
    FDD3860
    DISTI # 2453848    		ON SemiconductorMOSFET, N-CH, 100V, 29A, TO-252-3110
    • 500:£0.5060
    • 250:£0.5390
    • 100:£0.5720
    • 10:£0.8010
    • 1:£1.0000
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    Disponibilidad
    Valores:
    Available
    En orden:
    1986
    Ingrese la cantidad:
    El precio actual de FDD3860 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,14 US$
    1,14 US$
    10
    0,97 US$
    9,66 US$
    100
    0,74 US$
    74,20 US$
    500
    0,66 US$
    328,00 US$
    1000
    0,52 US$
    518,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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