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NGTB60N65FL2WG

NGTB60N65FL2WG
Mfr. #:
NGTB60N65FL2WG
Fabricante:
ON Semiconductor
Descripción:
IGBT Transistors 650V/60A FAST IGBT FSII
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NGTB60N65FL2WG Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NGTB60N65FL2WG DatasheetNGTB60N65FL2WG Datasheet (P4-P6)NGTB60N65FL2WG Datasheet (P7-P8)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
650 V
Voltaje de saturación colector-emisor:
1.64 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
100 A
Pd - Disipación de energía:
595 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Embalaje:
Tubo
Marca:
EN Semiconductor
Corriente de fuga puerta-emisor:
200 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
30
Subcategoría:
IGBT
Unidad de peso:
0.395068 oz
Tags
NGTB, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 100A 595000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
NGTB60N Series 650 V 100 A Through Hole Silicon IGBT - TO-247-3
*** Stop Electro
Insulated Gate Bipolar Transistor, 100A I(C), 650V V(BR)CES, N-Channel, TO-247
***emi
IGBT, 650V 60A Field Stop 2 IGBT
***nell
IGBT, SINGLE, N-CH, 650V, 100A, TO-247-3;
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ical
Trans IGBT Chip N-CH 1200V 80A 468000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Trench gate field-stop IGBT, S series 1200 V, 40 A low drop
***nell
IGBT, SINGLE, 1.2KV, 80A, TO-247-3; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 468W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
Parte # Mfg. Descripción Valores Precio
NGTB60N65FL2WG
DISTI # V99:2348_14671478		ON SemiconductorTrans IGBT Chip N-CH 650V 100A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		30
  • 1000:$6.5700
  • 500:$7.1860
  • 250:$8.0900
  • 100:$8.4179
  • 25:$9.7300
  • 10:$10.2040
  • 1:$11.2780
NGTB60N65FL2WG
DISTI # V36:1790_14671478		ON SemiconductorTrans IGBT Chip N-CH 650V 100A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
    NGTB60N65FL2WG
    DISTI # NGTB60N65FL2WGOS-ND    		ON Semiconductor650V/60A IGBT FSII
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		121In Stock
    • 5010:$1.1922
    • 2520:$1.2071
    • 510:$1.5648
    • 120:$1.9046
    • 30:$2.2353
    • 10:$2.3700
    • 1:$2.6400
    NGTB60N65FL2WG
    DISTI # 31577063    		ON SemiconductorTrans IGBT Chip N-CH 650V 100A 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant    		120
    • 120:$6.9179
    NGTB60N65FL2WG
    DISTI # 25891541    		ON SemiconductorTrans IGBT Chip N-CH 650V 100A 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant    		30
    • 1:$11.2780
    NGTB60N65FL2WG
    DISTI # NGTB60N65FL2WG    		ON Semiconductor(Alt: NGTB60N65FL2WG)
    RoHS: Compliant
    Min Qty: 90    		Asia - 450
    • 4500:$7.9500
    • 2250:$8.0847
    • 900:$8.2241
    • 450:$8.5179
    • 270:$8.8333
    • 180:$9.1731
    • 90:$9.5400
    NGTB60N65FL2WG
    DISTI # NGTB60N65FL2WG    		ON Semiconductor- Bulk (Alt: NGTB60N65FL2WG)
    Min Qty: 48
    Container: Bulk    		Americas - 0
    • 480:$6.4900
    • 144:$6.6900
    • 240:$6.6900
    • 96:$6.7900
    • 48:$6.8900
    NGTB60N65FL2WG
    DISTI # NGTB60N65FL2WG    		ON Semiconductor- Rail/Tube (Alt: NGTB60N65FL2WG)
    RoHS: Compliant
    Min Qty: 120
    Container: Tube    		Americas - 0
    • 1200:$1.0509
    • 600:$1.0769
    • 360:$1.0909
    • 240:$1.1049
    • 120:$1.1129
    NGTB60N65FL2WG
    DISTI # NGTB60N65FL2WG    		ON Semiconductor(Alt: NGTB60N65FL2WG)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 250:€5.4600
    • 100:€7.2000
    • 50:€7.7500
    • 10:€8.2900
    • 5:€8.9600
    • 1:€9.6200
    NGTB60N65FL2WG
    DISTI # 81Y3910    		ON Semiconductor650V/60A FAST IGBT FSII T / TUBE0
    • 500:$6.2100
    • 250:$6.4000
    • 100:$7.6400
    • 50:$8.2100
    • 25:$8.7800
    • 10:$9.6400
    • 1:$10.7400
    NGTB60N65FL2WG.
    DISTI # 29AC8931    		ON SemiconductorDC Collector Current:100A,Collector Emitter Saturation Voltage Vce(on):1.64V,Power Dissipation Pd:595W,Collector Emitter Voltage V(br)ceo:650V,No. of Pins:3Pins,Operating Temperature Max:175°C,Product Range:-,MSL:- RoHS Compliant: Yes0
    • 1200:$5.7900
    • 600:$5.9900
    • 240:$6.0900
    • 1:$6.1900
    NGTB60N65FL2WG
    DISTI # 863-NGTB60N65FL2WG    		ON SemiconductorIGBT Transistors 650V/60A FAST IGBT FSII
    RoHS: Compliant    		240
    • 1:$11.3400
    • 10:$10.2500
    • 25:$9.7700
    • 100:$8.4900
    • 250:$8.1100
    • 500:$7.3900
    • 1000:$6.4400
    NGTB60N65FL2WGON SemiconductorInsulated Gate Bipolar Transistor
    RoHS: Compliant    		240
    • 1000:$1.2500
    • 500:$1.3200
    • 100:$1.3700
    • 25:$1.4300
    • 1:$1.5400
    NGTB60N65FL2WG
    DISTI # 1217872P    		ON SemiconductorTRANSISTOR IGBT N-CH 650V 60A TO247, TU150
    • 2000:£5.7300
    • 1000:£5.8700
    • 100:£6.9600
    • 10:£7.8600
    NGTB60N65FL2WG
    DISTI # 2563378    		ON SemiconductorIGBT, SINGLE, N-CH, 650V, 100A, TO-247-34
    • 100:£6.4700
    • 50:£6.9600
    • 10:£7.4500
    • 5:£8.6500
    • 1:£9.2000
    NGTB60N65FL2WGON Semiconductor650V,60A,IGBT120
    • 1:$17.3600
    • 100:$11.0800
    • 500:$9.1400
    • 1000:$8.4000
    NGTB60N65FL2WG
    DISTI # 2563378    		ON SemiconductorIGBT, SINGLE, N-CH, 650V, 100A, TO-247-3
    RoHS: Compliant    		4
    • 1000:$9.7100
    • 500:$11.1400
    • 250:$12.2200
    • 100:$12.7900
    • 25:$14.7200
    • 10:$15.4500
    • 1:$17.0900
    Imagen Parte # Descripción
    STGWA75M65DF2

    Mfr.#: STGWA75M65DF2

    OMO.#: OMO-STGWA75M65DF2

    		 IGBT Transistors PTD HIGH VOLTAGE
    STGWA75M65DF2

    Mfr.#: STGWA75M65DF2

    OMO.#: OMO-STGWA75M65DF2-STMICROELECTRONICS

    		 TRENCH GATE FIELD-STOP IGBT M SE
    Disponibilidad
    Valores:
    240
    En orden:
    2223
    Ingrese la cantidad:
    El precio actual de NGTB60N65FL2WG es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    11,34 US$
    11,34 US$
    10
    10,25 US$
    102,50 US$
    25
    9,77 US$
    244,25 US$
    100
    8,49 US$
    849,00 US$
    250
    8,11 US$
    2 027,50 US$
    500
    7,39 US$
    3 695,00 US$
    1000
    6,44 US$
    6 440,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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