APT80GA60LD40

APT80GA60LD40
Mfr. #:
APT80GA60LD40
Fabricante:
Microchip / Microsemi
Descripción:
IGBT Transistors FG, IGBT-COMBI, 600V, TO-264
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
APT80GA60LD40 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT80GA60LD40 DatasheetAPT80GA60LD40 Datasheet (P4-P6)APT80GA60LD40 Datasheet (P7-P9)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Pastilla
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-264-3
Estilo de montaje:
SMD / SMT
Configuración:
Único
Voltaje colector-emisor VCEO Max:
600 V
Voltaje de saturación colector-emisor:
2 V
Voltaje máximo del emisor de puerta:
30 V
Corriente continua del colector a 25 C:
143 A
Pd - Disipación de energía:
625 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Embalaje:
Tubo
Corriente continua de colector Ic Max:
143 A
Altura:
5.21 mm
Longitud:
26.49 mm
Rango de temperatura de funcionamiento:
- 55 C to + 150 C
Ancho:
20.5 mm
Marca:
Microchip / Microsemi
Corriente continua del colector:
143 A
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
1
Subcategoría:
IGBT
Nombre comercial:
POWER MOS 8
Unidad de peso:
0.373904 oz
Tags
APT80GA, APT80G, APT80, APT8, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 143A 625000mW 3-Pin(3+Tab) TO-264 Tube
***ure Electronics
IGBT,600V, 143A, 625W, TO264
***th Star Micro
Insulated Gate Bipolar Transistor - Power MOS 8
***hardson RFPD
POWER IGBT TRANSISTOR
Parte # Mfg. Descripción Valores Precio
APT80GA60LD40
DISTI # V36:1790_09095997
Microsemi CorporationTrans IGBT Chip N-CH 600V 143A 3-Pin(3+Tab) TO-264
RoHS: Compliant
0
    APT80GA60LD40
    DISTI # APT80GA60LD40-ND
    Microsemi CorporationIGBT 600V 143A 625W TO264
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    107In Stock
    • 500:$9.5196
    • 100:$11.1609
    • 25:$12.1456
    • 10:$13.1300
    • 1:$14.4400
    APT80GA60LD40
    DISTI # APT80GA60LD40
    Microchip Technology IncTrans IGBT Chip N-CH 600V 143A 3-Pin(3+Tab) TO-264 - Rail/Tube (Alt: APT80GA60LD40)
    RoHS: Compliant
    Min Qty: 41
    Container: Tube
    Americas - 0
    • 410:$7.6900
    • 205:$7.7900
    • 123:$8.0900
    • 82:$8.3900
    • 41:$8.6900
    APT80GA60LD40
    DISTI # 494-APT80GA60LD40
    Microchip Technology IncIGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Combi
    RoHS: Compliant
    52
    • 1:$13.4900
    APT80GA60LD40
    DISTI # APT80GA60LD40
    Microsemi CorporationPOWER IGBT TRANSISTOR
    RoHS: Compliant
    0
    • 41:$8.2000
    • 100:$7.9900
    • 500:$7.8900
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    Disponibilidad
    Valores:
    Available
    En orden:
    2000
    Ingrese la cantidad:
    El precio actual de APT80GA60LD40 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    13,49 US$
    13,49 US$
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