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IPP80N06S2L07AKSA2

IPP80N06S2L07AKSA2
Mfr. #:
IPP80N06S2L07AKSA2
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CHANNEL_55/60V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPP80N06S2L07AKSA2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPP80N06S2L07AKSA2 DatasheetIPP80N06S2L07AKSA2 Datasheet (P4-P6)IPP80N06S2L07AKSA2 Datasheet (P7-P8)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Configuración:
Único
Calificación:
AEC-Q101
Embalaje:
Tubo
Altura:
15.65 mm
Longitud:
10 mm
Tipo de transistor:
1 N-Channel
Ancho:
4.4 mm
Marca:
Infineon Technologies
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
500
Subcategoría:
MOSFET
Parte # Alias:
IPP80N06S2L-07 SP001067894
Unidad de peso:
0.211644 oz
Tags
IPP80N06S2L0, IPP80N06S2L, IPP80N06S2, IPP80N06, IPP80N, IPP80, IPP8, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 55V 80A Automotive 3-Pin(3+Tab) TO-220AB
***et
Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) TO-220AB
***et Europe
Trans MOSFET N-CH 55V 80A 3-Pin TO-220 Tube
***Components
MOSFET N-Channel 55V 80A OptiMOS TO220AB
***ronik
MOSFET 55V 7.0mOHM AECQ TO220
***i-Key
MOSFET N-CH 55V 80A TO220-3
***ark
N Channel Mosfet, 55V, 80A P-To-220
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
***ment14 APAC
Prices include import duty and tax. MOSFET, N, LOGIC, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.007ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:210W; Transistor Case Style:TO-220AB; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Current Id Max:80A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Pulse Current Idm:320A; Termination Type:Through Hole; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:1.6V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
***nell
MOSFET, N, LOGIC, TO-220; Polarità Transistor:Canale N; Corrente Continua di Drain Id:80A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.007ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.6V; Dissipazione di Potenza Pd:210W; Modello Case Transistor:TO-220AB; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Id Max:80A; Corrente di Impulso Idm:320A; Intervallo Temperatura di Esercizio:Da -55°C a +175°C; Livello Temperatura a Piena Potenza:25°C; Temperatura di Corrente:25°C; Temperatura di Esercizio Min:-55°C; Tensione Vds:55V; Tensione Vds Tipica:55V; Tensione Vgs Max:1.6V; Tensione Vgs di Misurazione Rds on:10V; Tensione Vgs th Max:2V; Tipo di Terminazione:Foro Passante
Parte # Mfg. Descripción Valores Precio
IPP80N06S2L07AKSA2
DISTI # 32628461		Infineon Technologies AGTrans MOSFET N-CH 55V 80A Automotive 3-Pin(3+Tab) TO-220 Tube30500
  • 500:$1.6117
IPP80N06S2L07AKSA2
DISTI # IPP80N06S2L07AKSA2-ND		Infineon Technologies AGMOSFET N-CH 55V 80A TO220-3
RoHS: Compliant
Min Qty: 500
Container: Tube		Temporarily Out of Stock
  • 500:$1.7447
IPP80N06S2L07AKSA2
DISTI # V99:2348_06383881		Infineon Technologies AGTrans MOSFET N-CH 55V 80A Automotive 3-Pin(3+Tab) TO-220 Tube0
  • 500:$1.2530
IPP80N06S2L07AKSA2
DISTI # IPP80N06S2L07AKSA2		Infineon Technologies AGTrans MOSFET N-CH 55V 80A 3-Pin TO-220 Tube - Bulk (Alt: IPP80N06S2L07AKSA2)
RoHS: Compliant
Min Qty: 439
Container: Bulk		Americas - 0
    IPP80N06S2L07AKSA2
    DISTI # IPP80N06S2L07AKSA2    		Infineon Technologies AGTrans MOSFET N-CH 55V 80A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP80N06S2L07AKSA2)
    RoHS: Compliant
    Min Qty: 500
    Container: Tube    		Americas - 0
    • 3000:$1.1900
    • 5000:$1.1900
    • 1000:$1.2900
    • 2000:$1.2900
    • 500:$1.3900
    IPP80N06S2L07AKSA2
    DISTI # IPP80N06S2L07AKSA2    		Infineon Technologies AGTrans MOSFET N-CH 55V 80A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP80N06S2L07AKSA2)
    RoHS: Compliant
    Min Qty: 500
    Container: Tube    		Americas - 0
    • 3000:$1.1900
    • 5000:$1.1900
    • 1000:$1.2900
    • 2000:$1.2900
    • 500:$1.3900
    IPP80N06S2L07AKSA2
    DISTI # SP001067894    		Infineon Technologies AGTrans MOSFET N-CH 55V 80A 3-Pin TO-220 Tube (Alt: SP001067894)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 0
    • 500:€1.1900
    • 1000:€1.1900
    • 50:€1.2900
    • 100:€1.2900
    • 25:€1.3900
    • 10:€1.4900
    • 1:€1.6900
    IPP80N06S2L07AKSA2
    DISTI # 13AC9088    		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 55V, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.0056ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power RoHS Compliant: Yes1
    • 5000:$0.8080
    • 2500:$0.8390
    • 1000:$0.9010
    • 500:$1.0900
    • 100:$1.2500
    • 10:$1.5600
    • 1:$1.8300
    IPP80N06S2L07AKSA2
    DISTI # 726-IPP80N06S2L07AKS    		Infineon Technologies AGMOSFET N-CHANNEL_55/60V
    RoHS: Compliant    		1152
    • 1:$1.8100
    • 10:$1.5400
    • 100:$1.2400
    • 500:$1.0800
    • 1000:$0.8920
    • 2500:$0.8310
    • 5000:$0.8000
    • 10000:$0.7690
    IPP80N06S2L07AKSA2
    DISTI # 2725872    		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 55V, TO-220101
    • 500:£0.8400
    • 250:£0.9020
    • 100:£0.9630
    • 10:£1.2300
    • 1:£1.6000
    IPP80N06S2L07AKSA2
    DISTI # 2725872    		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 55V, TO-220
    RoHS: Compliant    		1
    • 100:$1.9600
    • 10:$2.4000
    • 1:$2.7500
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    Disponibilidad
    Valores:
    Available
    En orden:
    1985
    Ingrese la cantidad:
    El precio actual de IPP80N06S2L07AKSA2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,81 US$
    1,81 US$
    10
    1,54 US$
    15,40 US$
    100
    1,24 US$
    124,00 US$
    500
    1,08 US$
    540,00 US$
    1000
    0,89 US$
    892,00 US$
    2500
    0,83 US$
    2 077,50 US$
    5000
    0,80 US$
    4 000,00 US$
    10000
    0,77 US$
    7 690,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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