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DDB6U84N16RRBOSA1

DDB6U84N16RRBOSA1
Mfr. #:
DDB6U84N16RRBOSA1
Fabricante:
Infineon Technologies
Descripción:
IGBT MODULE 1600V 60A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
DDB6U84N16RRBOSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
DDB6U84N16RRBOSA1 DatasheetDDB6U84N16RRBOSA1 Datasheet (P4)
ECAD Model:
Atributo del producto
Valor de atributo
Tags
DDB6U84N16, DDB6U84, DDB6U8, DDB6, DDB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Diode Rectifier Bridge Single 104A AG-Econo2 Tray
***ineon SCT
eupec™ EconoBRIDGE™ - 1600V Diode Bridge Modules with Brake Chopper for a more compact converter design, AG-ECONO2-3, RoHS
***ineon
eupec EconoBRIDGE - 1600V Diode Bridge Modules with Brake Chopper for a more compact converter design. | Summary of Features: 2.5 kV AC 1min Insulation; Al(2)O(3) Substrate with Low Thermal Resistance; High Power Density; High mechanical robustness; Isolated copper base plate; Solder Contact Technology; RoHS compliant | Benefits: Compact design; Standard Housing | Target Applications: drives; welding; wind; aircon
***et
Trans IGBT Module N-CH 600V 50A 12-Pin Case SP1
*** Stop Electro
Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel
***ark
PM-IGBT-TFS-SP1 SP1 Tube RoHS Compliant: Yes
***i-Key
IGBT MOD TRENCH FULL BRIDGE SP1
***et
Motor / Motion / Ignition Controllers & Drivers 600V/50A
***inecomponents.com
600V, 50A IGBT Module (Molding Type)
***el Electronic
IC REG CONV DDR BUS 1OUT 8MSOP
***omponent
Fairchild Semiconductor power module
***nell
IGBT MODULE, 600V, 50A; Transistor Type:IGBT; Transistor Polarity:NPN; Voltage, Vces:600V; Current, Ic Continuous a Max:50A; Voltage, Vce Sat Max:2.8V; Power Dissipation:250W; Case Style:7PM-GA; Termination Type:Screw; Centres, Fixing:80mm; Current, Icm Pulsed:100A; Depth, External:93mm; Diameter, Fixing Hole:5.4mm; Pin Configuration:C2E1, E2, C1, G2, E2, E1, G1; Power, Pd:250W; Time, Rise:30ns; Transistors, No. of:2; Voltage, Vceo:600V
***et
Trans IGBT Module N-CH 600V 50A 7-Pin EPM Rail
*** Electronics
IGBT MODULE 600V 50A 250W EPM7
***el Electronic
IC MPU/RESET CIRC 2.63V SOT23-5
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ical
Trans IGBT Module N-CH 1200V 50A 280000mW 28-Pin AG-ECONO2-6 Tray
***nell
IGBT, MODULE, N-CH, 1.2KV; Transistor Polarity: N Channel; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 280W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case
***ineon
EconoPACK 2 1200V sixpack IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and NTC (alternative mechnically compatible to an IGBT3 module) | Summary of Features: Low V(CEsat); T(vj op) = 150C; V(CEsat) with positive Temperature Coefficient; Al(2)O(3) Substrate with Low Thermal Resistance; High Power and Thermal Cycling Capability; Integrated NTC temperature sensor; Copper Base Plate; Standard Housing | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; induction; aircon
***et Europe
Trans IGBT Module N-CH 1.2kV 35A nom 280W 17-Pin EconoPACK 2A 107.5x45mm T/R
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel
***co
IGBT 35A 1200V SIX-PACK SHORT PINS
***ical
Trans IGBT Module N-CH 600V 37A 115000mW 23-Pin EASY1B-1 Tray
***ark
Igbt Module; Transistor Polarity:n Channel; Dc Collector Current:30A; Collector Emitter Saturation Voltage Vce(On):600V; Power Dissipation Pd:115W; Collector Emitter Voltage V(Br)Ceo:600V; No. Of Pins:23Pins; Product Range:- Rohs Compliant: Yes
***ineon
EasyPIM 1B 600V PIM IGBT module with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode and NTC | Summary of Features: Low Switching Losses; Trench IGBT 3; V(CEsat) with positive Temperature Coefficient; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Resistance; Compact Design; Solder Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; aircon
Parte # Mfg. Descripción Valores Precio
DDB6U84N16RRBOSA1
DISTI # DDB6U84N16RRBOSA1-ND		Infineon Technologies AGIGBT MODULE 1600V 60A
RoHS: Compliant
Min Qty: 1
Container: Bulk		On Order
  • 10:$71.3910
  • 1:$75.1500
DDB6U84N16RRBOSA1
DISTI # DDB6U84N16RRBOSA1		Infineon Technologies AGIGBT Module N-Ch 1600V 85A 17-pin ECONO2-3 - Trays (Alt: DDB6U84N16RRBOSA1)
RoHS: Compliant
Min Qty: 10
Container: Tray		Americas - 0
  • 100:$56.4900
  • 60:$57.8900
  • 40:$59.3900
  • 20:$60.8900
  • 10:$61.7900
DDB6U84N16RR
DISTI # 641-DDB6U84N16RR		Infineon Technologies AGDiscrete Semiconductor Modules 1600V 85A UN-CNTL
RoHS: Not compliant		0
    Imagen Parte # Descripción
    DDB6U84N16RR

    Mfr.#: DDB6U84N16RR

    OMO.#: OMO-DDB6U84N16RR

    		 Discrete Semiconductor Modules 1600V 85A UN-CNTL
    DDB6U84N10R

    Mfr.#: DDB6U84N10R

    OMO.#: OMO-DDB6U84N10R-1190

    		 Nuevo y original
    DDB6U84N12R

    Mfr.#: DDB6U84N12R

    OMO.#: OMO-DDB6U84N12R-1190

    		 Nuevo y original
    DDB6U84N16R

    Mfr.#: DDB6U84N16R

    OMO.#: OMO-DDB6U84N16R-1190

    		 Discrete Semiconductor Modules 1600V 85A UN-CNTL
    DDB6U84N16RRBOSA1

    Mfr.#: DDB6U84N16RRBOSA1

    OMO.#: OMO-DDB6U84N16RRBOSA1-INFINEON-TECHNOLOGIES

    		 IGBT MODULE 1600V 60A
    DDB6U84N16RR

    Mfr.#: DDB6U84N16RR

    OMO.#: OMO-DDB6U84N16RR-38

    		 Discrete Semiconductor Modules 1600V 85A UN-CNTL
    Disponibilidad
    Valores:
    Available
    En orden:
    5500
    Ingrese la cantidad:
    El precio actual de DDB6U84N16RRBOSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    89,38 US$
    89,38 US$
    10
    84,92 US$
    849,16 US$
    100
    80,45 US$
    8 044,65 US$
    500
    75,98 US$
    37 988,65 US$
    1000
    71,51 US$
    71 508,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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