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IPP60R170CFD7XKSA1

IPP60R170CFD7XKSA1
Mfr. #:
IPP60R170CFD7XKSA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET HIGH POWER_NEW
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPP60R170CFD7XKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPP60R170CFD7XKSA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
14 A
Rds On - Resistencia de la fuente de drenaje:
144 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3.5 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
28 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
75 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
CoolMOS
Embalaje:
Tubo
Serie:
CoolMOS CFD7
Tipo de transistor:
1 N-Channel
Marca:
Infineon Technologies
Otoño:
9 ns
Tipo de producto:
MOSFET
Hora de levantarse:
15 ns
Cantidad de paquete de fábrica:
500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
68 ns
Tiempo típico de retardo de encendido:
31 ns
Parte # Alias:
IPP60R170CFD7 SP001617974
Tags
IPP60R1, IPP60R, IPP60, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
CoolMOS CFD7 Power Transistor High Power 170mΩ 75W 600V PG-TO 220-3
***ark
Mosfet, N-Ch, 600V, 14A, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.144Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes
***ineon
Summary of Features: Ultra-fast body diode; Best-in-class reverse recovery charge (Qrr); Improved reverse diode dv/dt and dif/dt ruggedness; Lowest FOM RDS(on) x Qg and Eoss; Best-in-class RDS(on)/package combinations | Benefits: Best-in-class hard commutation ruggedness; Highest reliability for resonant topologies; Highest efficiency with outstanding ease-of-use/performance trade-off; Enabling increased power density solutions | Target Applications: Target Applications:
CFD7 CoolMOS™ MOSFETs
Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power SMPS applications include server, telecom and EV charging stations.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Parte # Mfg. Descripción Valores Precio
IPP60R170CFD7XKSA1
DISTI # V36:1790_18787591		Infineon Technologies AGHIGH POWER_NEW0
    IPP60R170CFD7XKSA1
    DISTI # V99:2348_18787591    		Infineon Technologies AGHIGH POWER_NEW0
      IPP60R170CFD7XKSA1
      DISTI # IPP60R170CFD7XKSA1-ND      		Infineon Technologies AGMOSFET N-CH TO220-3
      RoHS: Compliant
      Min Qty: 1
      Container: Tube      		1856In Stock
      • 5000:$1.3707
      • 2500:$1.3879
      • 500:$1.7991
      • 100:$2.1898
      • 25:$2.5700
      • 10:$2.7240
      • 1:$3.0300
      IPP60R170CFD7XKSA1
      DISTI # IPP60R170CFD7XKSA1      		Infineon Technologies AGCoolMOS CFD7 Power Transistor High Power 170mΩ 75W 600V PG-TO 220-3 - Rail/Tube (Alt: IPP60R170CFD7XKSA1)
      RoHS: Compliant
      Min Qty: 500
      Container: Tube      		Americas - 0
      • 3000:$1.1900
      • 5000:$1.1900
      • 1000:$1.2900
      • 2000:$1.2900
      • 500:$1.3900
      IPP60R170CFD7XKSA1
      DISTI # 43AC9327      		Infineon Technologies AGMOSFET, N-CH, 600V, 14A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:14A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.144ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes0
      • 5000:$1.4500
      • 2500:$1.4900
      • 1000:$1.5800
      • 500:$1.8700
      • 100:$2.1000
      • 10:$2.5700
      • 1:$2.9900
      IPP60R170CFD7XKSA1
      DISTI # 726-IPP60R170CFD7XKS      		Infineon Technologies AGMOSFET HIGH POWER_NEW
      RoHS: Compliant      		500
      • 1:$2.8800
      • 10:$2.4400
      • 100:$1.9500
      • 500:$1.7100
      • 1000:$1.4200
      IPP60R170CFD7XKSA1
      DISTI # 2807979      		Infineon Technologies AGMOSFET, N-CH, 600V, 14A, TO-220
      RoHS: Compliant      		960
      • 1000:$1.9600
      • 500:$2.0100
      • 250:$2.1100
      • 100:$2.2300
      • 10:$2.5300
      • 1:$2.7000
      IPP60R170CFD7XKSA1
      DISTI # 2807979      		Infineon Technologies AGMOSFET, N-CH, 600V, 14A, TO-220960
      • 500:£1.2400
      • 250:£1.3400
      • 100:£1.4300
      • 10:£1.7900
      • 1:£2.3800
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      Disponibilidad
      Valores:
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      En orden:
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      Ingrese la cantidad:
      El precio actual de IPP60R170CFD7XKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      2,88 US$
      2,88 US$
      10
      2,44 US$
      24,40 US$
      100
      1,95 US$
      195,00 US$
      500
      1,71 US$
      855,00 US$
      1000
      1,42 US$
      1 420,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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