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IPB120N06S4H1ATMA2

IPB120N06S4H1ATMA2
Mfr. #:
IPB120N06S4H1ATMA2
Fabricante:
Infineon Technologies
Descripción:
RF Bipolar Transistors MOSFET N-Ch 60V 120A D2PAK-2
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB120N06S4H1ATMA2 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
IPB120N06
embalaje
Carrete
Alias ​​de parte
IPB120N06S4-H1 IPB120N06S4H1XT SP001028782
Unidad de peso
0.139332 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
TO-263-3
Tecnología
Si
Número de canales
1 Channel
Tipo transistor
1 N-Channel
Disipación de potencia Pd
250 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
15 ns
Hora de levantarse
5 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
120 A
Vds-Drain-Source-Breakdown-Voltage
60 V
Vgs-th-Gate-Source-Threshold-Voltage
4 V
Resistencia a la fuente de desagüe de Rds
2.4 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
60 ns
Tiempo de retardo de encendido típico
30 ns
Qg-Gate-Charge
270 nC
Modo de canal
Mejora
Tags
IPB120N06S, IPB120N06, IPB120N0, IPB120N, IPB120, IPB12, IPB1, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 60V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 60V, 175DEG C, 250W;
***ure Electronics
Single N-Channel 60 V 2.1 mOhm 270 nC OptiMOS™ Power Mosfet - TO-263-3
***et
Transistor MOSFET N-CH 60V 120A 3-Pin TO-263 T/R
***ark
MOSFET, N-CH, 60V, 175DEG C, 250W ROHS COMPLIANT: YES
***nell
MOSFET, CAN-N, 60V, 175°C, 250W;
***i-Key
MOSFET N-CH 60V 120A TO263-3
***ronik
N-CH 60V 120A 2,1mOhm TO263
***ineon
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
Parte # Mfg. Descripción Valores Precio
IPB120N06S4H1ATMA2
DISTI # IPB120N06S4H1ATMA2-ND		Infineon Technologies AGMOSFET N-CH 60V 120A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$1.5807
IPB120N06S4H1ATMA2
DISTI # IPB120N06S4H1ATMA2		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB120N06S4H1ATMA2)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$1.3900
  • 2000:$1.3900
  • 4000:$1.2900
  • 6000:$1.2900
  • 10000:$1.2900
IPB120N06S4H1ATMA2
DISTI # SP001028782		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R (Alt: SP001028782)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 1000:€1.5900
  • 2000:€1.2900
  • 4000:€1.1900
  • 6000:€1.0900
  • 10000:€1.0900
IPB120N06S4H1ATMA2
DISTI # 726-IPB120N06S4H1ATM		Infineon Technologies AGMOSFET N-Ch 60V 120A D2PAK-2
RoHS: Compliant		2017
  • 1:$2.7200
  • 10:$2.3100
  • 100:$2.0100
  • 250:$1.9000
  • 500:$1.7100
  • 1000:$1.4400
IPB120N06S4-H1
DISTI # 726-IP726-B120N06S4H		Infineon Technologies AGMOSFET N-Ch 60V 120A D2PAK-2 OptiMOS-T2
RoHS: Compliant		0
    Imagen Parte # Descripción
    IPB120N06S4H1ATMA2

    Mfr.#: IPB120N06S4H1ATMA2

    OMO.#: OMO-IPB120N06S4H1ATMA2

    		 MOSFET N-Ch 60V 120A D2PAK-2
    IPB120N06S403ATMA1

    Mfr.#: IPB120N06S403ATMA1

    OMO.#: OMO-IPB120N06S403ATMA1

    		 MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS-T2
    IPB120N06N G

    Mfr.#: IPB120N06N G

    OMO.#: OMO-IPB120N06N-G

    		 MOSFET N-Ch 60V 75A D2PAK-2
    IPB120N06S402ATMA1

    Mfr.#: IPB120N06S402ATMA1

    OMO.#: OMO-IPB120N06S402ATMA1

    		 MOSFET N-CHANNEL_55/60V
    IPB120N06N G

    Mfr.#: IPB120N06N G

    OMO.#: OMO-IPB120N06N-G-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 60V 75A TO-263
    IPB120N06NGINTR-ND

    Mfr.#: IPB120N06NGINTR-ND

    OMO.#: OMO-IPB120N06NGINTR-ND-1190

    		 Nuevo y original
    IPB120N06S4-H1

    Mfr.#: IPB120N06S4-H1

    OMO.#: OMO-IPB120N06S4-H1-1190

    		 Trans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R (Alt: IPB120N06S4-H1)
    IPB120N06S402ATMA1

    Mfr.#: IPB120N06S402ATMA1

    OMO.#: OMO-IPB120N06S402ATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 60V 120A TO263-3
    IPB120N06S4H1ATMA2

    Mfr.#: IPB120N06S4H1ATMA2

    OMO.#: OMO-IPB120N06S4H1ATMA2-INFINEON-TECHNOLOGIES

    		 RF Bipolar Transistors MOSFET N-Ch 60V 120A D2PAK-2
    IPB120N06S4-03

    Mfr.#: IPB120N06S4-03

    OMO.#: OMO-IPB120N06S4-03-317

    		 RF Bipolar Transistors MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS-T2
    Disponibilidad
    Valores:
    Available
    En orden:
    1500
    Ingrese la cantidad:
    El precio actual de IPB120N06S4H1ATMA2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,86 US$
    1,86 US$
    10
    1,77 US$
    17,65 US$
    100
    1,67 US$
    167,22 US$
    500
    1,58 US$
    789,65 US$
    1000
    1,49 US$
    1 486,40 US$
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