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IRF6629TRPBF

IRF6629TRPBF
Mfr. #:
IRF6629TRPBF
Fabricante:
Infineon / IR
Descripción:
MOSFET 25V 1 N-CH HEXFET 2.1mOhms 34nC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF6629TRPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6629TRPBF DatasheetIRF6629TRPBF Datasheet (P4-P6)IRF6629TRPBF Datasheet (P7-P9)IRF6629TRPBF Datasheet (P10)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
DirectFET-MX
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
25 V
Id - Corriente de drenaje continua:
29 A
Rds On - Resistencia de la fuente de drenaje:
2.1 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
34 nC
Pd - Disipación de energía:
100 W
Configuración:
Único
Embalaje:
Carrete
Altura:
0.7 mm
Longitud:
6.35 mm
Tipo de transistor:
1 N-Channel
Ancho:
5.05 mm
Marca:
Infineon / IR
Sensible a la humedad:
Yes
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
4800
Subcategoría:
MOSFET
Parte # Alias:
SP001526802
Tags
IRF6629, IRF662, IRF66, IRF6, IRF
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
A 25V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A DIRECTFET MX PACKAGE RATED AT 18
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:25V; Continuous Drain Current, Id:23A; On Resistance, Rds(on):2.1mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET MX ;RoHS Compliant: Yes
***ernational Rectifier
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number
Parte # Mfg. Descripción Valores Precio
IRF6629TRPBF
DISTI # IRF6629TRPBFTR-ND		Infineon Technologies AGMOSFET N-CH 25V 29A DIRECTFET
RoHS: Compliant
Min Qty: 4800
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF6629TRPBF
    DISTI # IRF6629TRPBFCT-ND    		Infineon Technologies AGMOSFET N-CH 25V 29A DIRECTFET
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IRF6629TRPBF
      DISTI # IRF6629TRPBFDKR-ND      		Infineon Technologies AGMOSFET N-CH 25V 29A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IRF6629TRPBF
        DISTI # 70019571        		Infineon Technologies AGA 25V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A DIRECTFET MX PACKAGE RATED AT 18
        RoHS: Compliant        		0
        • 4800:$3.2800
        • 9600:$3.2140
        • 24000:$3.1160
        • 48000:$2.9850
        • 120000:$2.7880
        IRF6629TRPBF
        DISTI # 942-IRF6629TRPBF        		Infineon Technologies AGMOSFET 25V 1 N-CH HEXFET 2.1mOhms 34nC
        RoHS: Compliant        		0
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          Mfr.#: IRF6629TRPBF.

          OMO.#: OMO-IRF6629TRPBF--1190

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          IRF6629TRPBF

          Mfr.#: IRF6629TRPBF

          OMO.#: OMO-IRF6629TRPBF-INFINEON-TECHNOLOGIES

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          Disponibilidad
          Valores:
          Available
          En orden:
          4000
          Ingrese la cantidad:
          El precio actual de IRF6629TRPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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