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HGTG11N120CND

HGTG11N120CND
Mfr. #:
HGTG11N120CND
Fabricante:
ON Semiconductor / Fairchild
Descripción:
IGBT Transistors 43A 1200V NCh w/Anti Parallel Hyprfst Dde
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
HGTG11N120CND Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores IGBT
RoHS:
E
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
1200 V
Voltaje de saturación colector-emisor:
2.1 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
43 A
Pd - Disipación de energía:
298 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
HGTG11N120CND
Embalaje:
Tubo
Corriente continua de colector Ic Max:
43 A
Altura:
20.82 mm
Longitud:
15.87 mm
Ancho:
4.82 mm
Marca:
ON Semiconductor / Fairchild
Corriente continua del colector:
55 A
Corriente de fuga puerta-emisor:
+/- 250 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
450
Subcategoría:
IGBT
Parte # Alias:
HGTG11N120CND_NL
Unidad de peso:
0.225401 oz
Tags
HGTG11N120CND, HGTG11N120C, HGTG11N12, HGTG11N1, HGTG11, HGTG1, HGTG, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***inecomponents.com
43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
***p One Stop Japan
Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail
***ure Electronics
HGTG11N120CND Series 1200 V 43 A Flange Mount NPT N-Channel IGBT-TO-247
***et
PWR IGBT 35A 1200V NPT N-CHANNEL W/DIODE TO-247
***i-Key
IGBT NPT N-CH 1200V 43A TO-247
*** Source Electronics
IGBT 1200V 43A 298W TO247
***ser
IGBTs 35A, 1200V, N-Ch
***Semiconductor
1200V, NPT IGBT
***an P&S
1200V NPT IGBT
***nell
IGBT, N; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:1200V; Current Ic Continuous a Max:43A; Voltage, Vce Sat Max:2.4V; Power Dissipation:298W; Case Style:TO-247; Termination Type:SMD
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:NPN; Continuous Collector Current, Ic:43A; Collector Emitter Saturation Voltage, Vce(sat):2.1V; Power Dissipation, Pd:298W; Package/Case:TO-247; C-E Breakdown Voltage:1200V ;RoHS Compliant: Yes
***rchild Semiconductor
HGTG11N120CND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.
***ment14 APAC
IGBT, N; Transistor Type:IGBT; DC Collector Current:43A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:298W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:43A; Package / Case:TO-247; Power Dissipation Max:298W; Power Dissipation Pd:298W; Termination Type:SMD; Transistor Polarity:N Channel; Voltage Vces:1.2kV
Parte # Mfg. Descripción Valores Precio
HGTG11N120CND
DISTI # C1S226600594853		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail
RoHS: Compliant		3280
  • 1020:$1.6200
  • 510:$1.7400
  • 120:$2.2800
  • 60:$2.4800
  • 30:$3.0200
HGTG11N120CND
DISTI # HGTG11N120CND-ND		ON SemiconductorIGBT 1200V 43A 298W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		422In Stock
  • 1350:$1.8282
  • 900:$2.1678
  • 450:$2.4159
  • 10:$3.1080
  • 1:$3.4600
HGTG11N120CND
DISTI # HGTG11N120CND		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG11N120CND)
RoHS: Compliant
Min Qty: 1		Europe - 150
  • 1:€1.7900
  • 10:€1.6900
  • 25:€1.4900
  • 50:€1.4900
  • 100:€1.3900
  • 500:€1.2900
  • 1000:€1.2900
HGTG11N120CND
DISTI # HGTG11N120CND		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG11N120CND)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$1.3900
  • 452:$1.3900
  • 902:$1.3900
  • 2250:$1.3900
  • 4500:$1.3900
HGTG11N120CND
DISTI # 58K8900		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K8900)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 1:$3.3000
  • 10:$2.8000
  • 25:$2.6800
  • 50:$2.5500
  • 100:$2.4300
  • 250:$2.3100
  • 500:$2.0700
HGTG11N120CND
DISTI # 58K8900		ON SemiconductorSINGLE IGBT, 1.2KV, 43A,DC Collector Current:43A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:298W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes442
  • 1:$3.4400
  • 10:$2.9400
  • 25:$2.8200
  • 50:$2.6900
  • 100:$2.5700
  • 250:$2.4500
  • 500:$2.2100
HGTG11N120CNDFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-247
RoHS: Compliant		2679
  • 1000:$1.8300
  • 500:$1.9300
  • 100:$2.0000
  • 25:$2.0900
  • 1:$2.2500
HGTG11N120CND
DISTI # 512-HGTG11N120CND		ON SemiconductorIGBT Transistors 43A 1200V NCh w/Anti Parallel Hyprfst Dde
RoHS: Compliant		191
  • 1:$3.3000
  • 10:$2.8000
  • 100:$2.4300
  • 250:$2.3100
HGTG11N120CNDON SemiconductorHGTG11N120CND Series 1200 V 43 A Flange Mount NPT N-Channel IGBT-TO-247
RoHS: Compliant		1800Tube
  • 5:$2.1600
  • 50:$1.9700
  • 300:$1.6400
HGTG11N120CND
DISTI # HGTG11N120CND		ON SemiconductorTransistor: IGBT,1.2kV,22A,298W,TO24739
  • 1:$4.3900
  • 3:$3.7700
  • 10:$3.0400
  • 30:$2.7300
HGTG11N120CNDFairchild Semiconductor Corporation 
RoHS: Compliant		Europe - 200
    HGTG11N120CNDFairchild Semiconductor CorporationINSTOCK1180
      HGTG11N120CND
      DISTI # 1611490      		ON SemiconductorIGBT, N
      RoHS: Compliant      		849
      • 1:$5.2200
      • 10:$4.4400
      • 100:$3.8500
      HGTG11N120CND
      DISTI # 1611490      		ON SemiconductorIGBT, N
      RoHS: Compliant      		872
      • 1:£2.8700
      • 10:£2.1600
      • 100:£1.8800
      • 250:£1.7700
      • 500:£1.6000
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      		 Microcontrollers - MCU 8-bit Microcontrollers - MCU 28KB Flash, 2KB RAM, 256B EE, 10b ADC2, DAC, Comp, PWM, CWG, SMT, HLT, WWDT, SCAN/CRC, ZCD, PPS, EUSART, SPI/I2C, IDLE/DOZE/PMD
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      Disponibilidad
      Valores:
      408
      En orden:
      2391
      Ingrese la cantidad:
      El precio actual de HGTG11N120CND es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      3,73 US$
      3,73 US$
      10
      3,17 US$
      31,70 US$
      100
      2,75 US$
      275,00 US$
      250
      2,61 US$
      652,50 US$
      500
      2,34 US$
      1 170,00 US$
      1000
      1,97 US$
      1 970,00 US$
      2500
      1,87 US$
      4 675,00 US$
      5000
      1,80 US$
      9 000,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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