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RGT50NS65DGC9

RGT50NS65DGC9
Mfr. #:
RGT50NS65DGC9
Fabricante:
Rohm Semiconductor
Descripción:
IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
RGT50NS65DGC9 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
RGT50NS65DGC9 más información
Atributo del producto
Valor de atributo
Fabricante:
Semiconductor ROHM
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-262-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
650 V
Voltaje de saturación colector-emisor:
1.65 V
Voltaje máximo del emisor de puerta:
30 V
Corriente continua del colector a 25 C:
48 A
Pd - Disipación de energía:
194 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 175 C
Embalaje:
Tubo
Marca:
Semiconductor ROHM
Corriente de fuga puerta-emisor:
200 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
50
Subcategoría:
IGBT
Parte # Alias:
RGT50NS65D(TO-262)
Tags
RGT50N, RGT5, RGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor IGBT Chip N-CH 650V 48A 3-Pin TO-262 Tube
***nell
IGBT, 650V, 48A, 175DEG C, 194W
***ark
Igbt, 650V, 48A, 175Deg C, 194W; Dc Collector Current:48A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:194W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-262; No. Of Pins:3Pins; Rohs Compliant: Yes
Field Stop Trench IGBTs
ROHM Field Stop Trench IGBTs are energy saving high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit withstand time, and built-in very fast & soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioner, welder, and general inverters for industrial use.
Parte # Mfg. Descripción Valores Precio
RGT50NS65DGC9
DISTI # RGT50NS65DGC9-ND		ROHM SemiconductorIGBT
RoHS: Compliant
Min Qty: 1
Container: Tube		1000In Stock
  • 1000:$1.6422
  • 100:$2.2874
  • 25:$2.6392
  • 10:$2.7920
  • 1:$3.1100
RGT50NS65DGC9
DISTI # RGT50NS65DGC9		ROHM SemiconductorTransistor IGBT Chip N-CH 650V 48A 3-Pin TO-262 Tube (Alt: RGT50NS65DGC9)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€1.1900
  • 100:€1.2900
  • 500:€1.2900
  • 50:€1.3900
  • 25:€1.4900
  • 10:€1.5900
  • 1:€1.7900
RGT50NS65DGC9
DISTI # 755-RGT50NS65DGC9		ROHM SemiconductorIGBT Transistors IGBT HIGHVOLT AND CURRENT AP
RoHS: Compliant		1000
  • 1:$3.1000
  • 10:$2.6300
  • 100:$2.2800
  • 250:$2.1700
  • 500:$1.9400
  • 1000:$1.6400
  • 2500:$1.5600
  • 5000:$1.5000
RGT50NS65DGC9ROHM Semiconductor 22
  • 8:$3.0580
  • 3:$3.4750
  • 1:$4.1700
RGT50NS65DGC9
DISTI # 3132327		ROHM SemiconductorIGBT, 650V, 48A, 175DEG C, 194W0
  • 500:£1.4500
  • 250:£1.5600
  • 100:£1.6400
  • 10:£1.9100
  • 1:£2.5200
RGT50NS65DGC9
DISTI # 3132327		ROHM SemiconductorIGBT, 650V, 48A, 175DEG C, 194W
RoHS: Compliant		0
  • 1000:$2.1400
  • 500:$2.5300
  • 250:$2.7200
  • 100:$2.8600
  • 10:$3.3300
  • 1:$4.3900
RGT50NS65DGC9ROHM SemiconductorIGBT Transistors IGBT HIGHVOLT AND CURRENT AP
RoHS: Compliant		Americas -
    RGT50NS65DGC9ROHM SemiconductorRoHS(ship within 1day)28
    • 1:$2.7500
    • 10:$2.0600
    • 50:$1.8200
    • 100:$1.5500
    • 500:$1.4400
    • 1000:$1.3900
    Imagen Parte # Descripción
    RGT50NL65DGTL

    Mfr.#: RGT50NL65DGTL

    OMO.#: OMO-RGT50NL65DGTL

    		 IGBT Transistors FIELD STOP TRENCH IGBT
    RGT50NS65DGC9

    Mfr.#: RGT50NS65DGC9

    OMO.#: OMO-RGT50NS65DGC9

    		 IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
    RGT50NS65DGTL

    Mfr.#: RGT50NS65DGTL

    OMO.#: OMO-RGT50NS65DGTL

    		 IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
    RGT50NS65DGC9

    Mfr.#: RGT50NS65DGC9

    OMO.#: OMO-RGT50NS65DGC9-1190

    		 Transistor IGBT Chip N-CH 650V 48A 3-Pin TO-262 Tube (Alt: RGT50NS65DGC9)
    RGT50NS65DGTL

    Mfr.#: RGT50NS65DGTL

    OMO.#: OMO-RGT50NS65DGTL-1190

    		 Transistor IGBT Chip N-CH 650V 48A 3-Pin LPDS T/R (Alt: RGT50NS65DGTL)
    Disponibilidad
    Valores:
    Available
    En orden:
    1984
    Ingrese la cantidad:
    El precio actual de RGT50NS65DGC9 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    3,10 US$
    3,10 US$
    10
    2,63 US$
    26,30 US$
    100
    2,28 US$
    228,00 US$
    250
    2,17 US$
    542,50 US$
    500
    1,94 US$
    970,00 US$
    1000
    1,64 US$
    1 640,00 US$
    2500
    1,56 US$
    3 900,00 US$
    5000
    1,50 US$
    7 500,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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