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SSM3K56ACT,L3F

SSM3K56ACT,L3F
Mfr. #:
SSM3K56ACT,L3F
Fabricante:
Toshiba
Descripción:
MOSFET Small-signal MOSFET ID: 1.4A, VDSS: 20V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SSM3K56ACT,L3F Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SSM3K56ACT,L3F DatasheetSSM3K56ACT,L3F Datasheet (P4-P6)SSM3K56ACT,L3F Datasheet (P7-P8)
ECAD Model:
Más información:
SSM3K56ACT,L3F más información
Atributo del producto
Valor de atributo
Fabricante:
Toshiba
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
CST3-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
20 V
Id - Corriente de drenaje continua:
1.4 A
Rds On - Resistencia de la fuente de drenaje:
840 mOhms
Vgs th - Voltaje umbral puerta-fuente:
400 mV
Vgs - Voltaje puerta-fuente:
8 V
Qg - Carga de puerta:
1 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
500 mW (1/2 W)
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Altura:
0.38 mm
Longitud:
1 mm
Serie:
SSM3K56
Tipo de transistor:
1 N-Channel
Ancho:
0.6 mm
Marca:
Toshiba
Transconductancia directa - Mín .:
1.4 S
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
10000
Subcategoría:
MOSFET
Tags
SSM3K56, SSM3K5, SSM3K, SSM3, SSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 20V 1.4A 3-Pin SOT-883 Embossed T/R
***i-Key
MOSFET N-CH 20V 1.4A CST3
***
N-CHL RDSON=.0186OHM VDSSS=20V
U-MOS VI Small Signal MOSFETs
Toshiba U-MOS VI Small Signal MOSFETs offer a variety of gate drive voltages required for many different types of mobile devices. Offered in single, dual, n-channel, p-channel and various voltage versions, they offer a wide variety of options for the design engineer. Each address the need to support high-current charging with low voltage and low RDS(on) requirements. These compact packages and and low voltage operation make them ideal solutions for high-density packaging requirements in smart phones and game consoles.
SSM3 High Current MOSFETs
Toshiba SSM3 High Current MOSFETs provide a high drain current rating, low capacitance, low on-resistance, and fast switching. Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are semiconductor devices used for switching and amplifying electronic signals in electronic devices. Applications include mobile devices (wearable device, smart phone, tablet PC, etc.), load switches, DC-DC converters, and general purpose switches. 
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Disponibilidad
Valores:
20
En orden:
2003
Ingrese la cantidad:
El precio actual de SSM3K56ACT,L3F es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,55 US$
0,55 US$
10
0,30 US$
3,03 US$
100
0,13 US$
13,00 US$
1000
0,10 US$
100,00 US$
2500
0,08 US$
190,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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