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IXFX64N60P3

IXFX64N60P3
Mfr. #:
IXFX64N60P3
Fabricante:
Littelfuse
Descripción:
MOSFET 600V 64A 0.095Ohm PolarP3 Power MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFX64N60P3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFX64N60P3 DatasheetIXFX64N60P3 Datasheet (P4-P5)
ECAD Model:
Más información:
IXFX64N60P3 más información
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
64 A
Rds On - Resistencia de la fuente de drenaje:
95 mOhms
Vgs th - Voltaje umbral puerta-fuente:
5 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
145 nC
Pd - Disipación de energía:
1.13 kW
Configuración:
Único
Nombre comercial:
HiPerFET
Embalaje:
Tubo
Serie:
IXFX64N60
Tipo de transistor:
1 N-Channel
Marca:
IXYS
Transconductancia directa - Mín .:
60 S, 36 S
Otoño:
11 ns
Tipo de producto:
MOSFET
Hora de levantarse:
17 ns
Cantidad de paquete de fábrica:
30
Subcategoría:
MOSFET
Unidad de peso:
0.056438 oz
Tags
IXFX64N6, IXFX64, IXFX6, IXFX, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 64A 3-Pin(3+Tab) PLUS 247
***ure Electronics
MOSFET 600V 64A 0.095Ohm PolarP3 Power MOSFET
*** Stop Electro
Power Field-Effect Transistor, 64A I(D), 600V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***i-Key
MOSFET N-CH 600V 64A PLUS247-3
***emi
N-Channel Power MOSFET, SUPERFET® II, FRFET®, 600 V, 52 A, 72 mΩ, TO-247
***nell
MOSFET, N-CH, 600V, 52A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 52A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Po
*** Stop Electro
Power Field-Effect Transistor, 52A I(D), 600V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
***emi
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 52 A, 70 mΩ, TO-247
***r Electronics
Power Field-Effect Transistor, 52A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET II MOSFET series. Noted by the "E" part number suffix, this family helps manage EMI issues and allows for easier design implementation. For faster switching in applications where switching losses must be at an absolute minimum, please consider the Super-FET II MOSFET series.
***emi
SuperFET II™ FRFET MOSFET, N-Channel, 600V, 52A, 62mΩ
***ical
Trans MOSFET N-CH 600V 52A Automotive 3-Pin(3+Tab) TO-247 Rail
*** Stop Electro
Power Field-Effect Transistor, 52A I(D), 600V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***el Electronic
Aluminum Electrolytic Capacitors 47μF Radial, Can - SMD ±20% Tape & Reel (TR) HA 0.402 10.20mm Surface Mount Automotive 45mA CAP ALUM 47UF 20% 63V SMD
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.Consequently SuperFETII is very well suited for the Soft switching and Hard Switching topologies like High Voltage Full Bridge and Half Bridge DC-DC, Interleaved Boost PFC, Boost PFC for HEV-EV automotive.SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
***p One Stop Global
Trans MOSFET N-CH 600V 46A 3-Pin(3+Tab) TO-247 Bulk
***i-Key
MOSFET N-CH 600V 46A TO247
***icroelectronics
N-channel 600 V, 0.06 Ohm typ., 42 A MDmesh M2 Power MOSFET in TO-247 package
***r Electronics
Power Field-Effect Transistor, 42A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
*** Source Electronics
Trans MOSFET N-CH 600V 42A 3-Pin(3+Tab) TO-247 Tube / MOSFET N-CH 600V 42A TO-247
***ure Electronics
STW48N60M2 Series 650 V 0.07 Ohm 42 A N-Channel MDmesh™ M2 Power Mosfet-TO-247
***ark
MOSFET, N-CH, 600V, 42A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:42A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***nell
MOSFET, N-CH, 600V, 42A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 42A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.06ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 300W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh M2 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
***icroelectronics
N-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a TO-247 package
***ure Electronics
N-Channel 600 V 87 mOhm Flange Mount MDmesh M2 Power Mosfet - TO-247 EP
***ark
MOSFET, N-CH, 600V, 34A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:34A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***nell
MOSFET, N-CH, 600V, 34A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 34A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.076ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 250W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh M2 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
PolarP3™ Power MOSFETs
IXYS PolarP3™ HiPerFET product family is the latest addition to IXYS' benchmark high-performance Polar-Series product line. These MOSFETs combine IXYS' latest PolarP3™ Technology platform and HiPerFET™ process to bring superior performance and energy savings to a variety of applications. Featuring low on state resistances and extremely low gate charge values, IXYS PolarP3™ HiPerFETs enable the development of more efficient power subsystems in applications such as switch/resonant-mode power supplies and UPS' for telecommunication, base stations, servers and server farms and energy efficient consumer appliances. Other applications that will benefit from the MOSFETs include power factor correction circuits, motor drives, lamp ballasts, laser drivers, DC-DC converters, battery chargers, robotic and servo control.Learn More
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Parte # Mfg. Descripción Valores Precio
IXFX64N60P3
DISTI # IXFX64N60P3-ND		IXYS CorporationMOSFET N-CH 600V 64A PLUS247
RoHS: Compliant
Min Qty: 1
Container: Tube		93In Stock
  • 510:$7.4338
  • 120:$8.8726
  • 30:$9.8317
  • 1:$11.9900
IXFX64N60P3
DISTI # 747-IXFX64N60P3		IXYS CorporationMOSFET 600V 64A 0.095Ohm PolarP3 Power MOSFET
RoHS: Compliant		165
  • 1:$12.5300
  • 10:$11.2800
  • 25:$9.3900
  • 50:$8.7200
  • 100:$8.5200
  • 250:$7.7800
  • 500:$7.1000
  • 1000:$6.7700
IXFX64N60P3
DISTI # 8024499P		IXYS CorporationMOSFET 600V 64A POLAR3 HIPERFET PLUS247, TU14
  • 5:£8.5100
  • 10:£8.0500
  • 30:£7.3400
  • 90:£6.9700
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 Cartridge Fuses 500V 25A 3AB PB-FREE
Disponibilidad
Valores:
120
En orden:
2103
Ingrese la cantidad:
El precio actual de IXFX64N60P3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
10,90 US$
10,90 US$
10
9,91 US$
99,10 US$
25
8,93 US$
223,25 US$
50
8,72 US$
436,00 US$
100
8,06 US$
806,00 US$
250
7,78 US$
1 945,00 US$
500
6,75 US$
3 375,00 US$
1000
6,27 US$
6 270,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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