SI9407BDY-T1-GE3

Mfr. #:: SI9407BDY-T1-GE3
Fabricante:: Vishay
Descripción:: MOSFET P-CH 60V 4.7A 8-SOIC
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: SI9407BDY-T1-GE3 Ficha de datos
Entrega:: DHL FedEx Ups TNT EMS
Pago:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Atributo del producto
Valor de atributo

Fabricante: VISHAY

categoria de producto: FET - Single

Serie: TrincheraFETR

embalaje: Embalaje alternativo de Digi-ReelR

Alias de parte: SI9407BDY-GE3

Unidad de peso: 0.017870 oz

Estilo de montaje: SMD / SMT

Paquete-Estuche: 8-SOIC (0.154", 3.90mm Width)

Tecnología: Si

Temperatura de funcionamiento: -55°C ~ 150°C (TJ)

Tipo de montaje: Montaje superficial

Número de canales: 1 Channel

Paquete de dispositivo de proveedor: 8-SO

Configuración: Único

Tipo FET: Canal P MOSFET, óxido metálico

Potencia máxima: 5W

Tipo transistor: 1 P-Channel

Drenaje-a-fuente-voltaje-Vdss: 60V

Entrada-Capacitancia-Ciss-Vds: 600pF @ 30V

Función FET: Estándar

Corriente-Continuo-Drenaje-Id-25 ° C: 4.7A (Tc)

Rds-On-Max-Id-Vgs: 120 mOhm @ 3.2A, 10V

Vgs-th-Max-Id: 3V @ 250μA

Puerta-Carga-Qg-Vgs: 22nC @ 10V

Disipación de potencia Pd: 2.4 W

Temperatura máxima de funcionamiento: + 150 C

Temperatura mínima de funcionamiento: - 55 C

Otoño: 30 ns

Hora de levantarse: 70 ns

Vgs-Puerta-Fuente-Voltaje: 20 V

Id-corriente-de-drenaje-continua: 3.2 A

Vds-Drain-Source-Breakdown-Voltage: - 60 V

Resistencia a la fuente de desagüe de Rds: 120 mOhms

Polaridad del transistor: P-Channel

Tiempo de retardo de apagado típico: 40 ns

Tiempo de retardo de encendido típico: 30 ns

Modo de canal: Mejora

Tags: SI9407BDY-T1-GE3, SI9407BDY-T1-G, SI9407BDY-T, SI9407BDY, SI9407BD, SI9407B, SI9407, SI940, SI94, SI9

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI9407BDY-T1-GE3 Descripción

***ied Electronics & Automation: MOSFET; P-Ch; Vds -60V; Vgs +/- 20V; Rds(on) 150mohm; Id 4.7A; SO-8; Pd 5W

***ure Electronics: SI9407BDY Series 60 V 0.12 Ohm 22 nC P-Channel Surface Mount Mosfet - SOIC-8

***ark: Mosfet, P Channel, -60V, -4.7A, Soic-8, Full Reel; Transistor Polarity:p Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4.7A; On Resistance Rds(On):0.1Ohm; Transistor Mounting:surface Mount; No. Of Pins:8Pins Rohs Compliant: No

***nell: MOSFET, P CH, 60V, 4.7A, 8SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.7A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-55°C to +150°C

Market price

Parte #	Mfg.	Descripción	Valores	Precio
SI9407BDY-T1-GE3 DISTI # SI9407BDY-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 60V 4.7A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	2500:$0.4107
SI9407BDY-T1-GE3 DISTI # SI9407BDY-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 60V 4.7A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.4533 500:$0.5741 100:$0.7403 10:$0.9370 1:$1.0600
SI9407BDY-T1-GE3 DISTI # SI9407BDY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 60V 4.7A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.4533 500:$0.5741 100:$0.7403 10:$0.9370 1:$1.0600
SI9407BDY-T1-GE3 DISTI # SI9407BDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 60V 3.2A 8-Pin SOIC N T/R - Cut TR (SOS) (Alt: SI9407BDY-T1-GE3) RoHS: Not Compliant Min Qty: 1 Container: Cut Tape	Americas - 0	1:$0.4219 25:$0.4069 62:$0.3929 125:$0.3799 312:$0.3699 625:$0.3699 1250:$0.3689
SI9407BDY-T1-GE3 DISTI # SI9407BDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 60V 3.2A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI9407BDY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.3539 5000:$0.3439 10000:$0.3299 15000:$0.3209 25000:$0.3119
SI9407BDY-T1-GE3 DISTI # 16P3885	Vishay Intertechnologies	Trans MOSFET P-CH 60V 3.2A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 16P3885) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$1.1200 10:$0.9190 25:$0.8480 50:$0.7760 100:$0.7050 250:$0.6560 500:$0.6060
SI9407BDY-T1-GE3 DISTI # 29X0553	Vishay Intertechnologies	MOSFET, P CHANNEL, -60V, -4.7A, SOIC-8, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-4.7A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.1ohm,Rds(on) Test Voltage Vgs:-10V,Power Dissipation Pd:5W , RoHS Compliant: Yes	0	1:$0.4780 2500:$0.4720 5000:$0.4660 10000:$0.4610 15000:$0.4550 25000:$0.4500
SI9407BDY-T1-GE3 DISTI # 16P3885	Vishay Intertechnologies	P CHANNEL MOSFET, -60V, 4.7A, SOIC,Transistor Polarity:P Channel,Continuous Drain Current Id:-4.7A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.1ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V , RoHS Compliant: Yes	0	1:$1.1200 10:$0.9190 25:$0.8480 50:$0.7760 100:$0.7050 250:$0.6560 500:$0.6060
SI9407BDY-T1-GE3. DISTI # 26AC3352	Vishay Intertechnologies	P-CHANNEL 60-V (D-S) MOSFET , ROHS COMPLIANT: NO	0	1:$0.4780 2500:$0.4720 5000:$0.4660 10000:$0.4610 15000:$0.4550 25000:$0.4500
SI9407BDY-T1-GE3 DISTI # 70026452	Vishay Siliconix	MOSFET,P-Ch,Vds -60V,Vgs +/- 20V,Rds(on) 150mohm,Id 4.7A,SO-8,Pd 5W RoHS: Compliant	0	1:$0.7400 25:$0.7100 100:$0.6800 250:$0.6400 500:$0.6000
SI9407BDY-T1-GE3 DISTI # 781-SI9407BDY-T1-GE3	Vishay Intertechnologies	MOSFET -60V Vds 20V Vgs SO-8 RoHS: Compliant	0	1:$1.1200 10:$0.9190 100:$0.7050 500:$0.6060 1000:$0.4790 2500:$0.4470 5000:$0.4250 10000:$0.4090
SI9407BDY-T1-GE3 DISTI # SI9407BDY-GE3	Vishay Intertechnologies	P-Ch 60V 4,7A 2,4W 0,12R SO8 RoHS: Compliant	0	50:€0.3720 100:€0.3120 500:€0.2820 2500:€0.2730
SI9407BDY-T1-GE3 DISTI # 2101454	Vishay Intertechnologies	MOSFET, P CH, 60V, 4.7A, 8SOIC RoHS: Compliant	50	5:£0.9090 25:£0.8860 100:£0.6500
SI9407BDY-T1-GE3 DISTI # 2101454	Vishay Intertechnologies	MOSFET, P CH, 60V, 4.7A, 8SOIC RoHS: Compliant	50	1:$1.6800 10:$1.4900 100:$1.1800 500:$0.9090 1000:$0.7180
SI9407BDY-T1-GE3.	Vishay Intertechnologies	MOSFET 60V 4.7A 5.0W 120mohm @ 10V RoHS: Compliant	Americas -	25:$0.5550
SI9407BDY-T1-GE3	Vishay Intertechnologies	MOSFET -60V Vds 20V Vgs SO-8 RoHS: Compliant	Americas - Stock

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: SI9407BDY-T1-E3 OMO.#: OMO-SI9407BDY-T1-E3	MOSFET -60V Vds 20V Vgs SO-8
	Mfr.#: SI9407BDY-T1-GE3 OMO.#: OMO-SI9407BDY-T1-GE3	MOSFET -60V Vds 20V Vgs SO-8
	Mfr.#: SI9407BDY-T1-GE3-CUT TAPE OMO.#: OMO-SI9407BDY-T1-GE3-CUT-TAPE-1190	Nuevo y original
	Mfr.#: SI9407BD OMO.#: OMO-SI9407BD-1190	Nuevo y original
	Mfr.#: SI9407BDY OMO.#: OMO-SI9407BDY-1190	Nuevo y original
	Mfr.#: SI9407BDY-T1 OMO.#: OMO-SI9407BDY-T1-1190	Nuevo y original
	Mfr.#: SI9407BDY-T1-E3 OMO.#: OMO-SI9407BDY-T1-E3-VISHAY	MOSFET P-CH 60V 4.7A 8-SOIC
	Mfr.#: SI9407BDY-T1-GE OMO.#: OMO-SI9407BDY-T1-GE-1190	Nuevo y original
	Mfr.#: SI9407BDY-T1-GE3 OMO.#: OMO-SI9407BDY-T1-GE3-VISHAY	MOSFET P-CH 60V 4.7A 8-SOIC
	Mfr.#: SI9407BDY-T1-GE3 GE3 OMO.#: OMO-SI9407BDY-T1-GE3-GE3-1190	Nuevo y original

Disponibilidad

Valores:: Available
En orden:: 2500
Ingrese la cantidad:

El precio actual de SI9407BDY-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,38 US$~~; ~~0,38 US$~~

10: ~~0,36 US$~~; ~~3,61 US$~~

100: ~~0,34 US$~~; ~~34,17 US$~~

500: ~~0,32 US$~~; ~~161,35 US$~~

1000: ~~0,30 US$~~; ~~303,70 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

Empezar con

SI9407BDY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes