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IPD85P04P407ATMA1

IPD85P04P407ATMA1
Mfr. #:
IPD85P04P407ATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET P-Ch -40V -85A DPAK-2 OptiMOS-P2
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPD85P04P407ATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPD85P04P407ATMA1 DatasheetIPD85P04P407ATMA1 Datasheet (P4-P6)IPD85P04P407ATMA1 Datasheet (P7-P9)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-252-3
Número de canales:
1 Channel
Polaridad del transistor:
P-Channel
Vds - Voltaje de ruptura de drenaje-fuente:
40 V
Id - Corriente de drenaje continua:
85 A
Rds On - Resistencia de la fuente de drenaje:
5.3 mOhms
Vgs th - Voltaje umbral puerta-fuente:
4 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
89 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
88 W
Configuración:
Único
Modo de canal:
Mejora
Calificación:
AEC-Q101
Embalaje:
Carrete
Altura:
2.3 mm
Longitud:
6.5 mm
Serie:
XPD85P04
Tipo de transistor:
1 P-Channel
Ancho:
6.22 mm
Marca:
Infineon Technologies
Otoño:
39 ns
Tipo de producto:
MOSFET
Hora de levantarse:
15 ns
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
34 ns
Tiempo típico de retardo de encendido:
24 ns
Parte # Alias:
IPD85P04P4-07 IPD85P4P47XT SP000842066
Unidad de peso:
0.139332 oz
Tags
IPD85, IPD8, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single P-Channel 40 V 73 mOhm 89 nC OptiMOS™ Power Mosfet - TO-252-3
***ical
Trans MOSFET P-CH 40V 85A Automotive 3-Pin(2+Tab) DPAK T/R
***et Europe
Trans MOSFET P-CH 40V 85A 3-Pin(2+Tab) TO-252
***i-Key
MOSFET N-CH TO252-3
***ark
Mosfet, Aec-Q101, P-Ch, -40V, To-252; Transistor Polarity:p Channel; Continuous Drain Current Id:-85A; Drain Source Voltage Vds:-40V; On Resistance Rds(On):0.0073Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, AEC-Q101, P-CH, -40V, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:-85A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.0073ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:88W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS P2 Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, AEC-Q101, CA-P, -40V, TO-252; Polarità Transistor:Canale P; Corrente Continua di Drain Id:-85A; Tensione Drain Source Vds:-40V; Resistenza di Attivazione Rds(on):0.0073ohm; Tensione Vgs di Misura Rds(on):-10V; Tensione di Soglia Vgs:-3V; Dissipazione di Potenza Pd:88W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS P2 Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Summary of Features: P-channel - Normal Level - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (RoHS compliant); 100% Avalanche tested | Benefits: No charge pump required for high side drive.; Simple interface drive circuit; World's lowest RDSon at 40V; Highest current capability; Lowest switching and conduction power losses for highest thermal efficiency; Robust packages with superior quality and reliability; Standard packages TO-252, TO-263, TO-220, TO-262 | Target Applications: High-Side MOSFETs for motor bridges (half-bridges, H-bridges, 3-phase-motors); Bridge configuration could be realized with 40V P-Channel as high side device with no need of charge pump
Parte # Mfg. Descripción Valores Precio
IPD85P04P407ATMA1
DISTI # V72:2272_06384467		Infineon Technologies AGTrans MOSFET P-CH 40V 85A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2943
  • 250:$0.7055
  • 100:$0.7130
  • 25:$0.8926
  • 10:$0.9030
  • 1:$1.0287
IPD85P04P407ATMA1
DISTI # IPD85P04P407ATMA1-ND		Infineon Technologies AGMOSFET N-CH TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$0.5787
IPD85P04P407ATMA1
DISTI # 31035300		Infineon Technologies AGTrans MOSFET P-CH 40V 85A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		443
  • 250:$0.7055
  • 100:$0.7130
  • 25:$0.8926
  • 13:$0.9030
IPD85P04P407ATMA1
DISTI # IPD85P04P407ATMA1		Infineon Technologies AGTrans MOSFET P-CH 40V 85A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD85P04P407ATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.5409
  • 5000:$0.5209
  • 10000:$0.5029
  • 15000:$0.4859
  • 25000:$0.4769
IPD85P04P407ATMA1
DISTI # IPD85P04P4-07		Infineon Technologies AGTrans MOSFET P-CH 40V 85A 3-Pin(2+Tab) TO-252 (Alt: IPD85P04P4-07)
RoHS: Compliant
Min Qty: 2500		Asia - 0
    IPD85P04P407ATMA1
    DISTI # 13AC9052    		Infineon Technologies AGMOSFET, AEC-Q101, P-CH, -40V, TO-252,Transistor Polarity:P Channel,Continuous Drain Current Id:-85A,Drain Source Voltage Vds:-40V,On Resistance Rds(on):0.0073ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V,Power RoHS Compliant: Yes2054
    • 1:$1.2400
    • 10:$1.0600
    • 25:$0.9760
    • 50:$0.8920
    • 100:$0.8080
    • 250:$0.7620
    • 500:$0.7150
    • 1000:$0.5640
    IPD85P04P4-07
    DISTI # 726-IPD85P04P4-07    		Infineon Technologies AGMOSFET P-Ch -40V -85A DPAK-2 OptiMOS-P2
    RoHS: Compliant    		3473
    • 1:$1.2400
    • 10:$1.0600
    • 100:$0.8080
    • 500:$0.7150
    • 1000:$0.5640
    • 2500:$0.5000
    IPD85P04P407ATMA1
    DISTI # 726-IPD85P04P407ATMA    		Infineon Technologies AGMOSFET P-Ch -40V -85A DPAK-2 OptiMOS-P2
    RoHS: Compliant    		2082
    • 1:$1.2400
    • 10:$1.0600
    • 100:$0.8080
    • 500:$0.7150
    • 1000:$0.5640
    • 2500:$0.5000
    IPD85P04P407ATMA1
    DISTI # 2725851    		Infineon Technologies AGMOSFET, AEC-Q101, P-CH, -40V, TO-252
    RoHS: Compliant    		2234
    • 5:£0.9080
    • 25:£0.8180
    • 100:£0.6230
    • 250:£0.5880
    • 500:£0.5520
    IPD85P04P407ATMA1
    DISTI # C1S322000306745    		Infineon Technologies AGTrans MOSFET P-CH 40V 85A Automotive 3-Pin(2+Tab) DPAK T/R
    RoHS: Compliant    		443
    • 250:$0.7055
    • 100:$0.7130
    • 25:$0.8928
    • 10:$0.9030
    IPD85P04P407ATMA1
    DISTI # 2725851    		Infineon Technologies AGMOSFET, AEC-Q101, P-CH, -40V, TO-252
    RoHS: Compliant    		2054
    • 5:$1.7600
    • 25:$1.5400
    • 100:$1.2500
    • 250:$1.0600
    • 500:$0.9160
    • 1000:$0.8660
    • 5000:$0.8210
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    Disponibilidad
    Valores:
    Available
    En orden:
    1984
    Ingrese la cantidad:
    El precio actual de IPD85P04P407ATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,23 US$
    1,23 US$
    10
    1,05 US$
    10,50 US$
    100
    0,81 US$
    80,80 US$
    500
    0,72 US$
    357,50 US$
    1000
    0,56 US$
    564,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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