IPD80R600P7ATMA1

IPD80R600P7ATMA1
Mfr. #:
IPD80R600P7ATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 800V 8A TO252-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPD80R600P7ATMA1 Ficha de datos
Entrega:
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ECAD Model:
Atributo del producto
Valor de atributo
Tags
IPD80R6, IPD80R, IPD80, IPD8, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 800 V 600 mOhm 20 nC CoolMOS™ Power Mosfet - DPAK
***ical
800V CoolMOS P7 Power Transistor
***i-Key
MOSFET N-CH 800V 8A TO252-3
***ronik
N-CH 800V 8A 600mOhm DPAK
***et Europe
LOW POWER_NEW
***ark
Mosfet, N-Ch, 800V, 8A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:800V; On Resistance Rds(On):0.51Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 800V, 8A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.51ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:60W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 800V, 8A, TO-252; Polarità Transistor:Canale N; Corrente Continua di Drain Id:8A; Tensione Drain Source Vds:800V; Resistenza di Attivazione Rds(on):0.51ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:60W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
800V CoolMOS TM P7 series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. | Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power
Parte # Mfg. Descripción Valores Precio
IPD80R600P7ATMA1
DISTI # 32416789
Infineon Technologies AG800V CoolMOS P7 Power Transistor2500
  • 2500:$0.8747
IPD80R600P7ATMA1
DISTI # IPD80R600P7ATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 800V 8A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2462In Stock
  • 1000:$0.7832
  • 500:$0.9921
  • 100:$1.2009
  • 10:$1.5400
  • 1:$1.7200
IPD80R600P7ATMA1
DISTI # IPD80R600P7ATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 800V 8A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2462In Stock
  • 1000:$0.7832
  • 500:$0.9921
  • 100:$1.2009
  • 10:$1.5400
  • 1:$1.7200
IPD80R600P7ATMA1
DISTI # IPD80R600P7ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 800V 8A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 5000:$0.6759
  • 2500:$0.7097
IPD80R600P7ATMA1
DISTI # IPD80R600P7ATMA1
Infineon Technologies AGLOW POWER_NEW - Tape and Reel (Alt: IPD80R600P7ATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 25000:$0.6129
  • 15000:$0.6239
  • 10000:$0.6459
  • 5000:$0.6699
  • 2500:$0.6949
IPD80R600P7ATMA1
DISTI # 24AC9046
Infineon Technologies AGMOSFET, N-CH, 800V, 8A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:800V,On Resistance Rds(on):0.51ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes0
  • 1000:$0.7320
  • 500:$0.9270
  • 250:$0.9840
  • 100:$1.0400
  • 50:$1.1500
  • 25:$1.2600
  • 10:$1.3600
  • 1:$1.6000
IPD80R600P7ATMA1Infineon Technologies AGSingle N-Channel 800 V 600 mOhm 20 nC CoolMOS Power Mosfet - DPAK
RoHS: Not Compliant
2500Reel
  • 2500:$0.6250
IPD80R600P7ATMA1
DISTI # 726-IPD80R600P7ATMA1
Infineon Technologies AGMOSFET
RoHS: Compliant
1411
  • 1:$1.5800
  • 10:$1.3500
  • 100:$1.0300
  • 500:$0.9180
  • 1000:$0.7250
IPD80R600P7ATMA1
DISTI # 2771324
Infineon Technologies AGMOSFET, N-CH, 800V, 8A, TO-2525
  • 500:£0.6940
  • 250:£0.7350
  • 100:£0.7770
  • 25:£0.8990
  • 5:£1.0200
IPD80R600P7ATMA1
DISTI # XSFP00000128481
Infineon Technologies AG 
RoHS: Compliant
5000 in Stock0 on Order
  • 5000:$1.1400
  • 2500:$1.2500
IPD80R600P7ATMA1
DISTI # 2771324
Infineon Technologies AGMOSFET, N-CH, 800V, 8A, TO-252
RoHS: Compliant
0
  • 1000:$1.2600
  • 500:$1.6000
  • 100:$2.0600
  • 10:$2.6000
  • 1:$2.9200
Imagen Parte # Descripción
IPD80R600P7ATMA1

Mfr.#: IPD80R600P7ATMA1

OMO.#: OMO-IPD80R600P7ATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 800V 8A TO252-3
IPD80R600P7ATMA1-CUT TAPE

Mfr.#: IPD80R600P7ATMA1-CUT TAPE

OMO.#: OMO-IPD80R600P7ATMA1-CUT-TAPE-1190

Nuevo y original
IPD80R600P7

Mfr.#: IPD80R600P7

OMO.#: OMO-IPD80R600P7-1190

Nuevo y original
Disponibilidad
Valores:
Available
En orden:
5000
Ingrese la cantidad:
El precio actual de IPD80R600P7ATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,92 US$
0,92 US$
10
0,87 US$
8,73 US$
100
0,83 US$
82,74 US$
500
0,78 US$
390,70 US$
1000
0,74 US$
735,50 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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