IKD03N60RFATMA1

IKD03N60RFATMA1
Mfr. #:
IKD03N60RFATMA1
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors IGBT w/ INTG DIODE 600V 5A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IKD03N60RFATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IKD03N60RFATMA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-252-3
Estilo de montaje:
SMD / SMT
Configuración:
Único
Voltaje colector-emisor VCEO Max:
600 V
Voltaje de saturación colector-emisor:
2.2 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
5 A
Pd - Disipación de energía:
53.6 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
RC
Embalaje:
Carrete
Altura:
2.41 mm
Longitud:
6.73 mm
Ancho:
6.22 mm
Marca:
Infineon Technologies
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
2500
Subcategoría:
IGBT
Nombre comercial:
TRENCHSTOP
Parte # Alias:
IKD03N60RF SP000942930
Tags
IKD03, IKD0, IKD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Stop Electro
Insulated Gate Bipolar Transistor, 5A I(C), 600V V(BR)CES, N-Channel, TO-252
***ineon SCT
The RC-Drives 600 V, 3 A hard-switching IGBT3 with monolithically integrated reverse conducting diode in a TO252 package, has been developed by Infineon as a cost optimized solution for consumer drives market, PG-TO252-3, RoHS
***ineon
RC-Drives IGBT technology has been developed by Infineon as a cost optimized solution for sensitive consumer drives market. This basic technology provides outstanding performance for permanent magnet synchronous and brushless DC motor drives. | Summary of Features: Optimized parameters for up to 20% lower switching losses; Operating range of DC to 30kHz; Max junction temperature 175C; Short circuit capability of 5s; Very tight parameter distribution; Best in class current versus package size performance; Smooth switching performance leading to low EMI levels | Benefits: Excellent cost/performance for hard switching applications; Outstanding temperature stability; Very good EMI behavior; Up to 60% space saving on the PCB; Higher reliability due to monolithically integrated IGBT & diode due to less thermal cycling during switching | Target Applications: Washing machines; General purpose inverters; Aircon compressors; Hard switching topologies up to 1.0kW
***ical
Trans IGBT Chip N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
***emi
IGBT, 600V, 3A, Short Circuit Rated
*** Stop Electro
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252
***S
French Electronic Distributor since 1988
***rchild Semiconductor
Using advanced NPT IGBT Technology, Fairchild’s the NPT IGBTs offer the optimum performance for low power inverter-driven applications where low-losses and short circuit ruggedness feature are essential.
***ical
Trans IGBT Chip N-CH 600V 6A 3-Pin(2+Tab) TO-252
***ineon SCT
Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies, PG-TO252-3, RoHS
***ineon
Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies. | Summary of Features: 30% lower E off compared to previous generation; Short circuit withstand time 10s; Designed for operation above 30kHz; High ruggedness, temperature stable behaviour; Pb-free lead plating; RoHS compliant; Qualified according to JEDEC for target applications | Target Applications: Infineon offers a comprehensive IGBT portfolio for the general purpose inverters, solar inverters, UPS, induction heating, microwave oven, rice cookers, welding and SMPS segments.
***et
IGBT 600V 6A 30W DPAK
*** Electronic Components
IGBT Transistors Dis High Perf IGBT
***inecomponents.com
Discrete, High Performance IGBT
***rchild Semiconductor
Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
***ical
Trans IGBT Chip N-CH 600V 6A 3-Pin (2+Tab) DPAK T/R
***icontronic
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA
***inecomponents.com
POWER IGBT UFS 3A 600V TF=275NS MAX TO-252 TAPE AND REEL
***ser
IGBTs 6a, 600V N-Ch IGBT UFS Series
***ponent Stockers USA
6 A 600 V N-CHANNEL IGBT TO-252AA
***ical
Trans IGBT Chip N-CH 600V 6.3A 35000mW 3-Pin(2+Tab) DPAK Tube
***ineon SCT
600V IGBT with UltraFast Soft Recovery Diode, DPAKCOPAK-3, RoHS
***ineon
Target Applications: Dishwasher; Fan; Lighting HID; Refridgeration
***icontronic
Insulated Gate Bipolar Transistor, 6.3A I(C), 600V V(BR)CES, N-Channel
***ment14 APAC
IGBT, SINGLE, 600V, 6.3A, TO-252AA-3
*** Electronic Components
Rectifiers 600V IGBT Ultrafast 3.7A 1.95V
***ark
TUBE / IG,COPAK DPAK,G5,U,U,N,0.5,600
***nell
IGBT, SINGLE, 600V, 6.3A, TO-252AA-3; DC Collector Current: 6.3A; Collector Emitter Saturation Voltage Vce(on): 1.95V; Power Dissipation Pd: 35W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252AA; No.
***ical
Trans IGBT Chip N-CH 600V 6A 48000mW Automotive 3-Pin(2+Tab) DPAK T/R
***icroelectronics
N-channel 3 A, 600 V low drop IGBT
***ure Electronics
STGD3NB60SD Series 600 V 3 A Surface Mount N-Channel PowerMESH™ IGBT - DPAK-3
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252
***ser
IGBTs Insulated Gate Bipolar Transistor N-Ch 600 Volt 3 Amp
Home Appliance Solutions
Infineon Home Appliance Solutions offer a range of products for low power drive in-home appliance applications. These devices meet and exceed the most rigorous requirements for reliability, quality, security and energy efficiency. Included in this portfolio are RC-Drives IGBTs, fast IGBTs, discrete IGBTs, rapid diodes, gate driver ICs, microcontrollers: XMC™ and iMotion™, IPM: CIPOS™ and IRAM.Learn More
Parte # Mfg. Descripción Valores Precio
IKD03N60RFATMA1
DISTI # V36:1790_06384425
Infineon Technologies AGTrans IGBT Chip N-CH 600V 5A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
0
  • 2500000:$0.3880
  • 1250000:$0.3883
  • 250000:$0.4204
  • 25000:$0.4796
  • 2500:$0.4897
IKD03N60RFATMA1
DISTI # IKD03N60RFATMA1CT-ND
Infineon Technologies AGIGBT 600V 6.5A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2296In Stock
  • 1000:$0.5404
  • 500:$0.6845
  • 100:$0.8286
  • 10:$1.0630
  • 1:$1.1900
IKD03N60RFATMA1
DISTI # IKD03N60RFATMA1DKR-ND
Infineon Technologies AGIGBT 600V 6.5A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2296In Stock
  • 1000:$0.5404
  • 500:$0.6845
  • 100:$0.8286
  • 10:$1.0630
  • 1:$1.1900
IKD03N60RFATMA1
DISTI # IKD03N60RFATMA1TR-ND
Infineon Technologies AGIGBT 600V 6.5A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 5000:$0.4663
  • 2500:$0.4897
IKD03N60RFATMA1
DISTI # IKD03N60RFATMA1
Infineon Technologies AGTrans IGBT Chip N-CH 600V 5A 3-Pin TO-252 T/R - Bulk (Alt: IKD03N60RFATMA1)
RoHS: Compliant
Min Qty: 863
Container: Bulk
Americas - 0
  • 8630:$0.3679
  • 4315:$0.3749
  • 2589:$0.3879
  • 1726:$0.4019
  • 863:$0.4169
IKD03N60RFATMA1
DISTI # IKD03N60RFATMA1
Infineon Technologies AGTrans IGBT Chip N-CH 600V 5A 3-Pin TO-252 T/R - Tape and Reel (Alt: IKD03N60RFATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 25000:$0.4229
  • 15000:$0.4299
  • 10000:$0.4449
  • 5000:$0.4619
  • 2500:$0.4789
IKD03N60RFATMA1
DISTI # SP000942930
Infineon Technologies AGTrans IGBT Chip N-CH 600V 5A 3-Pin TO-252 T/R (Alt: SP000942930)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 0
  • 25000:€0.3729
  • 15000:€0.4019
  • 10000:€0.4349
  • 5000:€0.4749
  • 2500:€0.5799
IKD03N60RFATMA1
DISTI # 726-IKD03N60RFATMA1
Infineon Technologies AGIGBT Transistors IGBT w/ INTG DIODE 600V 5A
RoHS: Compliant
2061
  • 1:$1.0500
  • 10:$0.8910
  • 100:$0.6840
  • 500:$0.6050
  • 1000:$0.4770
  • 2500:$0.4230
IKD03N60RFATMA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 5A I(C), 600V V(BR)CES, N-Channel, TO-252
RoHS: Compliant
9000
  • 1000:$0.3800
  • 500:$0.4000
  • 100:$0.4200
  • 25:$0.4400
  • 1:$0.4700
IKD03N60RFATMA1
DISTI # IKD03N60RF
Infineon Technologies AG600V 5A 53,6W TO252
RoHS: Compliant
0
  • 5:€1.2800
  • 50:€0.6800
  • 200:€0.3800
  • 500:€0.3600
Imagen Parte # Descripción
IKD03N60RFATMA1

Mfr.#: IKD03N60RFATMA1

OMO.#: OMO-IKD03N60RFATMA1

IGBT Transistors IGBT w/ INTG DIODE 600V 5A
IKD03N60RFAATMA1

Mfr.#: IKD03N60RFAATMA1

OMO.#: OMO-IKD03N60RFAATMA1

IGBT Transistors IGBT PRODUCTS
IKD03N60RF

Mfr.#: IKD03N60RF

OMO.#: OMO-IKD03N60RF

IGBT Transistors TRENCH RC Drives Fast 600V 2.5A
IKD03N60RF

Mfr.#: IKD03N60RF

OMO.#: OMO-IKD03N60RF-INFINEON-TECHNOLOGIES

IGBT 600V 5A 53.6W TO252-3
IKD03N60RFATMA1

Mfr.#: IKD03N60RFATMA1

OMO.#: OMO-IKD03N60RFATMA1-INFINEON-TECHNOLOGIES

IGBT 600V 6.5A TO252-3
IKD03N60RFAATMA1

Mfr.#: IKD03N60RFAATMA1

OMO.#: OMO-IKD03N60RFAATMA1-INFINEON-TECHNOLOGIES

IGBT Transistors IGBT PRODUCTS
Disponibilidad
Valores:
Available
En orden:
1985
Ingrese la cantidad:
El precio actual de IKD03N60RFATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,05 US$
1,05 US$
10
0,89 US$
8,91 US$
100
0,68 US$
68,40 US$
500
0,60 US$
302,50 US$
1000
0,48 US$
477,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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