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A2T09D400-23NR6

A2T09D400-23NR6
Mfr. #:
A2T09D400-23NR6
Fabricante:
NXP / Freescale
Descripción:
RF MOSFET Transistors AIRFAST RF POWER LDMOS TRANSISTOR 716-960 MHz, 93 W AVG., 28 V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
A2T09D400-23NR6 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
A2T09D400-23NR6 DatasheetA2T09D400-23NR6 Datasheet (P4-P6)A2T09D400-23NR6 Datasheet (P7-P9)A2T09D400-23NR6 Datasheet (P10-P12)A2T09D400-23NR6 Datasheet (P13-P15)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
NXP
Categoria de producto:
Transistores RF MOSFET
Polaridad del transistor:
Canal N
Tecnología:
Si
Id - Corriente de drenaje continua:
2.7 A
Vds - Voltaje de ruptura de drenaje-fuente:
- 500 mV, 70 V
Ganar:
17.9 dB
Potencia de salida:
93 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
OM-1230-4L2S-7
Embalaje:
Carrete
Frecuencia de operación:
716 MHz to 960 MHz
Escribe:
RF Power MOSFET
Marca:
NXP / Freescale
Número de canales:
2 Channel
Tipo de producto:
Transistores RF MOSFET
Cantidad de paquete de fábrica:
150
Subcategoría:
MOSFET
Vgs - Voltaje puerta-fuente:
- 6 V, 10 V
Vgs th - Voltaje umbral puerta-fuente:
1.5 V
Parte # Alias:
935318726528
Unidad de peso:
0.186416 oz
Tags
A2T09, A2T0, A2T
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***escale Semiconductor
AIRFAST RF POWER LDMOS TRANSISTOR 716-960 MHz, 93 W AVG., 28 V
***W
RF Power Transistor,716 to 960 MHz, 400 W, Typ Gain in dB is 17.9 @ 836 MHz, 28 V, LDMOS, SOT1819
***et Europe
Trans MOSFET N-CH -0.5/70V 6-Pin OM-1230 T/R
***i-Key
AIRFAST RF POWER LDMOS TRANSISTO
***hardson RFPD
RF POWER TRANSISTOR
Parte # Mfg. Descripción Valores Precio
A2T09D400-23NR6
DISTI # A2T09D400-23NR6-ND		NXP SemiconductorsAIRFAST RF POWER LDMOS TRANSISTO
RoHS: Not compliant
Min Qty: 150
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 150:$125.4911
A2T09D400-23NR6
DISTI # A2T09D400-23NR6		Avnet, Inc.Trans MOSFET N-CH -0.5/70V 6-Pin OM-1230 T/R - Tape and Reel (Alt: A2T09D400-23NR6)
RoHS: Compliant
Min Qty: 150
Container: Reel		Americas - 0
  • 150:$137.4900
  • 300:$132.0900
  • 600:$126.8900
  • 900:$122.2900
  • 1500:$119.9900
A2T09D400-23NR6
DISTI # 841-A2T09D400-23NR6		NXP SemiconductorsRF MOSFET Transistors AIRFAST RF POWER LDMOS TRANSISTOR 716-960 MHz, 93 W AVG., 28 V
RoHS: Compliant		0
  • 1:$150.6600
  • 5:$147.7300
  • 10:$142.8600
  • 25:$136.8100
  • 50:$134.9300
  • 100:$125.4900
  • 150:$122.6700
A2T09D400-23NR6
DISTI # A2T09D400-23NR6		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		6562
  • 1:$157.7700
  • 10:$145.8200
  • 25:$141.5400
Imagen Parte # Descripción
A2T09D400-23NR6

Mfr.#: A2T09D400-23NR6

OMO.#: OMO-A2T09D400-23NR6

 RF MOSFET Transistors AIRFAST RF POWER LDMOS TRANSISTOR 716-960 MHz, 93 W AVG., 28 V
A2T09D400-23NR6

Mfr.#: A2T09D400-23NR6

OMO.#: OMO-A2T09D400-23NR6-NXP-SEMICONDUCTORS

 RF MOSFET Transistors AIRFAST RF POWER LDMOS TRANSISTOR 716-960 MHz, 93 W AVG, 28 V
Disponibilidad
Valores:
Available
En orden:
4000
Ingrese la cantidad:
El precio actual de A2T09D400-23NR6 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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