GS816118DD-250

GS816118DD-250
Mfr. #:
GS816118DD-250
Fabricante:
GSI Technology
Descripción:
SRAM 2.5 or 3.3V 1M x 18 18M
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
GS816118DD-250 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
GS816118DD-250 más información
Atributo del producto
Valor de atributo
Fabricante:
Tecnología GSI
Categoria de producto:
SRAM
RoHS:
N
Tamaño de la memoria:
18 Mbit
Organización:
1 M x 18
Tiempo de acceso:
5.5 ns
Frecuencia máxima de reloj:
250 MHz
Tipo de interfaz:
Parallel
Voltaje de suministro - Máx:
3.6 V
Voltaje de suministro - Min:
2.3 V
Corriente de suministro - Máx .:
210 mA, 230 mA
Temperatura mínima de funcionamiento:
0 C
Temperatura máxima de funcionamiento:
+ 70 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
BGA-165
Embalaje:
Bandeja
Tipo de memoria:
SDR
Serie:
GS816118DD
Escribe:
Tubería / Flujo a través
Marca:
Tecnología GSI
Sensible a la humedad:
Yes
Tipo de producto:
SRAM
Cantidad de paquete de fábrica:
36
Subcategoría:
Memoria y almacenamiento de datos
Nombre comercial:
SyncBurst
Tags
GS816118DD-25, GS816118DD-2, GS816118DD, GS816118D, GS81611, GS8161, GS816, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Dual 2.5V/3.3V 18M-Bit 1M x 18 5.5ns/2.5ns 165-Pin FBGA
SyncBurst SRAMs
GSI Technology SyncBurst SRAMs are a broad portfolio of Synchronous Burst (SyncBurst™) SRAMs with fast clock rates and low power. SyncBurst SRAMs provide a "burst" of (typically) 2 to 4 words in response to a single clock signal. The devices' simplified interface is designed to use a data bus's maximum bandwidth. SyncBurst SRAMs are used in military, networking, industrial, automotive and medical imaging applications where a mid-range performance point is required.Learn More
Imagen Parte # Descripción
GS816118DGT-150

Mfr.#: GS816118DGT-150

OMO.#: OMO-GS816118DGT-150

SRAM 2.5 or 3.3V 1M x 18 18M
GS816118DGT-250V

Mfr.#: GS816118DGT-250V

OMO.#: OMO-GS816118DGT-250V

SRAM 1.8/2.5V 1M x 18 18M
GS816118DGD-250V

Mfr.#: GS816118DGD-250V

OMO.#: OMO-GS816118DGD-250V

SRAM 1.8/2.5V 1M x 18 18M
GS816118DGT-250IV

Mfr.#: GS816118DGT-250IV

OMO.#: OMO-GS816118DGT-250IV

SRAM 1.8/2.5V 1M x 18 18M
GS816118DGT-333IV

Mfr.#: GS816118DGT-333IV

OMO.#: OMO-GS816118DGT-333IV

SRAM 1.8/2.5V 1M x 18 18M
GS816118DD-150

Mfr.#: GS816118DD-150

OMO.#: OMO-GS816118DD-150

SRAM 2.5 or 3.3V 1M x 18 18M
GS816118DD-250

Mfr.#: GS816118DD-250

OMO.#: OMO-GS816118DD-250

SRAM 2.5 or 3.3V 1M x 18 18M
GS816118DD-250V

Mfr.#: GS816118DD-250V

OMO.#: OMO-GS816118DD-250V

SRAM 1.8/2.5V 1M x 18 18M
GS816118DGD-400

Mfr.#: GS816118DGD-400

OMO.#: OMO-GS816118DGD-400

SRAM 2.5 or 3.3V 1M x 18 18M
GS816118DD-400

Mfr.#: GS816118DD-400

OMO.#: OMO-GS816118DD-400

SRAM 2.5 or 3.3V 1M x 18 18M
Disponibilidad
Valores:
Available
En orden:
3000
Ingrese la cantidad:
El precio actual de GS816118DD-250 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
14,46 US$
14,46 US$
25
13,43 US$
335,75 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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