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DMN62D1LFD-7

DMN62D1LFD-7
Mfr. #:
DMN62D1LFD-7
Fabricante:
Diodes Incorporated
Descripción:
MOSFET 60V N-Ch Enh FET 20Vgs 0.4A 32pF
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
DMN62D1LFD-7 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
DMN62D1LFD-7 DatasheetDMN62D1LFD-7 Datasheet (P4-P6)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Diodos incorporados
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
X1-DFN1212-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
60 V
Id - Corriente de drenaje continua:
400 mA
Rds On - Resistencia de la fuente de drenaje:
1.4 Ohms
Vgs th - Voltaje umbral puerta-fuente:
1 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
550 pC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
500 mW (1/2 W)
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Serie:
DMN62D
Tipo de transistor:
1 N-Channel
Marca:
Diodos incorporados
Otoño:
13.9 ns
Tipo de producto:
MOSFET
Hora de levantarse:
2.8 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
21 ns
Tiempo típico de retardo de encendido:
2.1 ns
Tags
DMN62D1LFD, DMN62D1L, DMN62D1, DMN62, DMN6, DMN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 60 V 2 Ohm 0.55 nC SMT Enhancement Mode Mosfet - X1-DFN1212-3
***ark
Mosfet, N-Ch, 60V, 0.4A, U-Dfn1212 Rohs Compliant: Yes
***ical
Trans MOSFET N-CH 60V 0.4A 3-Pin X1-DFN T/R
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
***et
2N7002 FAMILY X1-DFN1212-3 T&R 3K
*** Source Electronics
MOSFET N/P-CH 60V SOT563 / Trans MOSFET N/P-CH 60V 0.5A/0.36A 6-Pin SOT-563 T/R
***ure Electronics
N & P Channel 60 V 1.7/4 Ohm Enhancement Mode Mosfet - SOT-563
***ment14 APAC
MOSFET, N & P CH, 60V, SOT-563; Transistor Polarity:N and Complement; Continuous Drain Current Id:500mA; Source Voltage Vds:60V; On
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SOT-563 Polarity: N/P Variants: Enhancement mode Power dissipation: 0.45 W
***nell
MOSFET, N & P CH, 60V, SOT-563; Transistor Polarity: N and P Complement; Continuous Drain Current Id: 500mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 1.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 450mW; Transistor Case Style: SOT-563; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***et Japan
Transistor MOSFET Array Dual N-CH 60V 440mA 6-Pin SOT-563 T/R
***ment14 APAC
MOSFET, DUAL N-CH, 60V, 0.41A, SOT563; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:410mA; Source Voltage Vds:60V; On
***nell
MOSFET, DUAL N-CH, 60V, 0.41A, SOT563; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 410mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 1.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 580mW; Transistor Case Style: SOT-563; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***(Formerly Allied Electronics)
2N7002K-T1-GE3 N-channel MOSFET Transistor; 0.3 A; 60 V; 3-Pin SOT-23
***ure Electronics
2N7002K Series N-Channel 60 V 2 Ohm 0.6 nC MosFet Surface Mount - SOT-23-3
***et Europe
Transistor MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R
***enic
60V 300mA 2´Î@10V500mA 350mW 2.5V@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
***nsix Microsemi
Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***nell
MOSFET, N-CH, 60V, 0.3A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:300mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:350mW; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; Current Id Max:300mA; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:20V
***(Formerly Allied Electronics)
MOSFET, Power,N-Ch,VDSS 60V,RDS(ON) 2 Ohms,ID 300mA,TO-236 (SOT-23),PD 0.35W
*** Source Electronics
Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R / MOSFET N-CH 60V 300MA SOT-23
***ure Electronics
2N7002K Series N-Channel 60 V 2 Ohms Surface Mount Power Mosfet - SOT-23-3
*** Electronics
VISHAY - 2N7002K-T1-E3 - N CHANNEL MOSFET, 60V, 0.5A, SOT-23
***roFlash
Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***ment14 APAC
N CH MOSFET, 60V, 0.5A, SOT-23; Transist; N CH MOSFET, 60V, 0.5A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.5ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:200mW; No. of Pins:3
***emi
Dual N−Channel Power MOSFET with ESD Protection 60V, 295mA, 1.6Ω
***et Europe
Transistor MOSFET Array Dual N-CH 60V 300mA 6-Pin SC-88 T/R
***ark
Mosfet, Aec-Q101, Dual N-Ch, 60V, Sot-363; Channel Type:n Channel; Drain Source Voltage Vds N Channel:60V; Drain Source Voltage Vds P Channel:60V; Continuous Drain Current Id N Channel:295Ma; No. Of Pins:6Pins; Product Range:- Rohs Compliant: Yes
***nell
MOSFET, AUTO, DUAL N-CH, 60V, SOT-363; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 295mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 250mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ure Electronics
N-Channel 60 V 2 Ohm SMT Enhancement Mode Mosfet - X1-DFN1212-3
***ark
Mosfet, N-Ch, 60V, 0.31A, X1-Dfn1212 Rohs Compliant: Yes
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
Parte # Mfg. Descripción Valores Precio
DMN62D1LFD-7
DISTI # V72:2272_06697452		Zetex / Diodes IncN-Channel Enhancement Mode MOSFET
RoHS: Compliant		25
  • 25:$0.2334
  • 10:$0.2594
  • 1:$0.4084
DMN62D1LFD-7
DISTI # DMN62D1LFD-7DICT-ND		Diodes IncorporatedMOSFET N-CH 60V 0.4A DFN1212-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		29380In Stock
  • 1000:$0.1063
  • 500:$0.1362
  • 100:$0.2348
  • 10:$0.3930
  • 1:$0.5500
DMN62D1LFD-7
DISTI # DMN62D1LFD-7DIDKR-ND		Diodes IncorporatedMOSFET N-CH 60V 0.4A DFN1212-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		29380In Stock
  • 1000:$0.1063
  • 500:$0.1362
  • 100:$0.2348
  • 10:$0.3930
  • 1:$0.5500
DMN62D1LFD-7
DISTI # DMN62D1LFD-7DITR-ND		Diodes IncorporatedMOSFET N-CH 60V 0.4A DFN1212-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		24000In Stock
  • 3000:$0.0907
DMN62D1LFD-7
DISTI # C1S205700612409		Diodes IncorporatedMOSFETs
RoHS: Compliant		25
  • 25:$0.2334
DMN62D1LFD-7
DISTI # DMN62D1LFD-7		Diodes Incorporated2N7002 FAMILY X1-DFN1212-3 T&R 3K - Tape and Reel (Alt: DMN62D1LFD-7)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.0547
  • 6000:$0.0520
  • 12000:$0.0496
  • 18000:$0.0473
  • 30000:$0.0463
DMN62D1LFD-7
DISTI # DMN62D1LFD-7		Diodes Incorporated2N7002 FAMILY X1-DFN1212-3 T&R 3K (Alt: DMN62D1LFD-7)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Europe - 0
  • 3000:€0.0800
  • 6000:€0.0580
  • 12000:€0.0541
  • 18000:€0.0473
  • 30000:€0.0442
DMN62D1LFD-7
DISTI # DMN62D1LFD-7		Diodes Incorporated2N7002 FAMILY X1-DFN1212-3 T&R 3K (Alt: DMN62D1LFD-7)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Asia - 0
    DMN62D1LFD-7
    DISTI # 621-DMN62D1LFD-7    		Diodes IncorporatedMOSFET 60V N-Ch Enh FET 20Vgs 0.4A 32pF
    RoHS: Compliant    		2270
    • 1:$0.4300
    • 10:$0.2730
    • 100:$0.1170
    • 1000:$0.0900
    • 3000:$0.0690
    DMN62D1LFD-13
    DISTI # 621-DMN62D1LFD-13    		Diodes IncorporatedMOSFET 60V N-Ch Enh FET 20Vgs 0.4A 32pF
    RoHS: Compliant    		0
    • 1:$0.4300
    • 10:$0.2730
    • 100:$0.1170
    • 1000:$0.0900
    • 2500:$0.0690
    • 10000:$0.0610
    DMN62D1LFD-7
    DISTI # 9211123P    		Zetex / Diodes IncN-CH ENHANCEMENT MODE MOSFET, RL650
    • 250:£0.0970
    • 1000:£0.0750
    • 2000:£0.0660
    • 3000:£0.0580
    DMN62D1LFD-7
    DISTI # XSFP00000141599    		Diodes Incorporated 
    RoHS: Compliant    		17664
    • 3000:$0.1094
    • 17664:$0.0995
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    Disponibilidad
    Valores:
    Available
    En orden:
    1990
    Ingrese la cantidad:
    El precio actual de DMN62D1LFD-7 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,42 US$
    0,42 US$
    10
    0,27 US$
    2,73 US$
    100
    0,12 US$
    11,70 US$
    1000
    0,09 US$
    90,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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