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MRFE6VP100HR5

MRFE6VP100HR5
Mfr. #:
MRFE6VP100HR5
Fabricante:
NXP / Freescale
Descripción:
RF MOSFET Transistors VHV6 100W 50V ISM
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
MRFE6VP100HR5 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
NXP
Categoria de producto:
Transistores RF MOSFET
RoHS:
Y
Polaridad del transistor:
Canal N
Tecnología:
Si
Vds - Voltaje de ruptura de drenaje-fuente:
141 V
Ganar:
26 dB
Potencia de salida:
100 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
NI-780-4
Embalaje:
Carrete
Configuración:
Único
Frecuencia de operación:
1800 MHz to 2000 MHz
Serie:
MRFE6VP100H
Escribe:
RF Power MOSFET
Marca:
NXP / Freescale
Tipo de producto:
Transistores RF MOSFET
Cantidad de paquete de fábrica:
50
Subcategoría:
MOSFET
Vgs - Voltaje puerta-fuente:
- 6 V, 10 V
Vgs th - Voltaje umbral puerta-fuente:
2.1 V
Parte # Alias:
935319905178
Unidad de peso:
0.225605 oz
Tags
MRFE6VP1, MRFE6VP, MRFE6V, MRFE6, MRFE, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor,1.8 to 2000 MHz, 100 W, Typ Gain in dB is 27.2 @ 512 MHz, 50 V, LDMOS, SOT1827
***roFlash
RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
***nell
TRANSISTOR, RF, 133V, NI-780H-4L; Drain Source Voltage Vds: 133VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 2000MHz; RF Transistor Case: NI-780; No. of Pins: 4Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: -; SVHC: No SVHC (15-Jan-2019)
***ark
LDMOS, RF, 100W, NI-780; Transistor Type:RF MOSFET; Drain Source Voltage Vds:133V DC; Power Dissipation Pd:100W; Operating Frequency Range:1.8MHz to 2GHz; Operating Temperature Min:-40°C; Operating Temperature Max:150°C
***W
RF Power Transistor,470 to 1215 MHz, 90 W, Typ Gain in dB is 22 @ 860 MHz, 50 V, LDMOS, SOT1735
***nsix Microsemi
1-Element Ultra High Frequency Band Silicon N-Channel Metal-oxide Semiconductor FET TO-272
***ical
Trans RF MOSFET N-CH 110V 5-Pin TO-270 WB T/R
*** Electronic Components
RF MOSFET Transistors VHV6 860MHz 90W TO 272WB4
***ponent Stockers USA
UHF BAND Si N-CHANNEL RF POWER MOSFET TO-272
***W
RF Power Transistor,470 to 1215 MHz, 90 W, Typ Gain in dB is 22 @ 860 MHz, 50 V, LDMOS, SOT1735
***ical
Trans RF MOSFET N-CH 115V 5-Pin TO-272 WB EP T/R
*** Electronic Components
RF MOSFET Transistors VHV6 50V 4.5W TO272WB4
***i-Key
RF 2-ELEMENT, ULTRA HIGH FREQUE
***or
FET RF 2CH 115V 860MHZ TO272-4
*** Semiconductors SCT
Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V, FM2F
***et
Transistor RF FET N-CH 110V 10MHz to 450MHz 2-Pin TO-272 T/R
*** Electronic Components
RF MOSFET Transistors VHV6 10W TO272-2N
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:50µA; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.68V; Package/Case:TO-272 ;RoHS Compliant: Yes
***(Formerly Allied Electronics)
N-channel MOSFET Transistor 190 A 100 V 4-Pin SOT-227
***ical
Trans MOSFET N-CH 100V 190A 4-Pin SOT-227
*** Source Electronics
Power MOSFET, 190 A | MOSFET N-CH 100V 190A SOT227
***ukat
N-Ch 100V 190A 568W 0,0065R SOT227
***ronik
N-CH 100V 190A 6,5mOhm SOT-227
***ure Electronics
Output & SW Modules - ECONO IGBT-e3
***nell
MOSFET, N-CH, 100V, 190A, SOT-227; Transistor Polarity:N Channel; Continuous Drain Current Id:190A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0054ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.3V; Power Dissipation Pd:568W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-227; No. of Pins:4; MSL:-; Operating Temperature Range:-55°C to +150°C
***ure Electronics
N-Channel 125 V 389 W HF/VHF/UHF MOS Field-Effect RF Power Transistor-M174
***roFlash
Rf Fet Transistor, 125 V, 20 A, 389 W, 230 Mhz, M174 Rohs Compliant: Yes
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***el Electronic
TDK - CGA2B3X7S2A102K050BB - Keramikvielschichtkondensator, SMD, 1000 pF, 100 V, 0402 [Metrisch 1005], ± 10%, X7S, Baureihe CGA
***nell
MOSFET, RF, 150W, 125V, 20A, M174; Drain Source Voltage Vds: 125V; Continuous Drain Current Id: 20A; Power Dissipation Pd: 389W; Operating Frequency Min: -; Operating Frequency Max: 230MHz; RF Transistor Case: M174; No. of Pin
***r Electronics
RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ure Electronics
STAC2942 Series 130 V 40 A 350 W 21 dB N-channel RF SMT Power Transistor
***el Electronic
TDK - CGA5L3X7R2E104K160AA - SMD flerskiktig keramisk kondensator, 0.1 µF, 250 V, 1206 [3216 Metrisk], ± 10%, X7R, CGA Serien
***nell
RF TRANSISTOR, 130V, 175MHZ, STAC244B; Drain Source Voltage Vds: 130V; Continuous Drain Current Id: 40A; Power Dissipation Pd: 625W; Operating Frequency Min: -; Operating Frequency Max: 175MHz; RF Transistor Case: STAC244B; No. of Pins: 4Pins; Operating Temperature Max: 200°C; Product Range: -; MSL: -; SVHC: No SVHC (07-Jul-2017)
Parte # Mfg. Descripción Valores Precio
MRFE6VP100HR5
DISTI # V72:2272_07190026		NXP SemiconductorsTrans RF MOSFET N-CH 133V 5-Pin Case 465M-01 T/R
RoHS: Compliant		23
  • 10:$77.0600
  • 1:$80.9800
MRFE6VP100HR5
DISTI # MRFE6VP100HR5CT-ND		NXP SemiconductorsFET RF 2CH 133V 512MHZ NI780
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		19In Stock
  • 10:$78.4140
  • 1:$82.6800
MRFE6VP100HR5
DISTI # MRFE6VP100HR5DKR-ND		NXP SemiconductorsFET RF 2CH 133V 512MHZ NI780
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		19In Stock
  • 10:$78.4140
  • 1:$82.6800
MRFE6VP100HR5
DISTI # MRFE6VP100HR5TR-ND		NXP SemiconductorsFET RF 2CH 133V 512MHZ NI780
RoHS: Compliant
Min Qty: 50
Container: Tape & Reel (TR)		On Order
  • 100:$68.8794
  • 50:$74.0582
MRFE6VP100HR5
DISTI # 26078465		NXP SemiconductorsTrans RF MOSFET N-CH 133V 5-Pin Case 465M-01 T/R
RoHS: Compliant		122
  • 1:$111.5400
MRFE6VP100HR5
DISTI # 25766996		NXP SemiconductorsTrans RF MOSFET N-CH 133V 5-Pin Case 465M-01 T/R
RoHS: Compliant		23
  • 10:$77.0600
  • 1:$80.9800
MRFE6VP100HR5
DISTI # MRFE6VP100HR5		Avnet, Inc.Trans MOSFET N-CH 133V 4-Pin NI-780 T/R - Tape and Reel (Alt: MRFE6VP100HR5)
RoHS: Compliant
Min Qty: 50
Container: Reel		Americas - 0
  • 50:$71.7900
  • 100:$67.2900
  • 200:$67.0900
  • 300:$66.8900
  • 500:$66.7900
MRFE6VP100HR5
DISTI # 28W3506		Avnet, Inc.Trans MOSFET N-CH 133V 4-Pin NI-780 T/R - Product that comes on tape, but is not reeled (Alt: 28W3506)
RoHS: Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$81.6700
MRFE6VP100HR5
DISTI # 28W3506		NXP SemiconductorsLDMOS, RF, 100W, NI-780,Drain Source Voltage Vds:133VDC,Continuous Drain Current Id:-,Power Dissipation Pd:100W,Operating Frequency Min:1.8MHz,Operating Frequency Max:2GHz,RF Transistor Case:NI-780,No. of Pins:4Pins,MSL:- RoHS Compliant: Yes1
  • 1:$89.9400
  • 10:$85.2800
  • 25:$81.6700
MRFE6VP100HR5
DISTI # 05W8099		NXP SemiconductorsLDMOS, RF, 100W, NI-780, FULL REEL,Drain Source Voltage Vds:133VDC,Continuous Drain Current Id:-,Power Dissipation Pd:100W,Operating Frequency Min:1.8MHz,Operating Frequency Max:2GHz,RF Transistor Case:NI-780,No. of Pins:4PinsRoHS Compliant: Yes0
  • 1:$86.7500
  • 50:$61.9600
MRFE6VP100HR5
DISTI # 841-MRFE6VP100HR5		NXP SemiconductorsRF MOSFET Transistors VHV6 100W 50V ISM
RoHS: Compliant		267
  • 1:$89.9400
  • 5:$88.2000
  • 10:$85.2800
  • 25:$81.6700
  • 50:$80.5500
  • 100:$74.9200
MRFE6VP100HR5Freescale SemiconductorRF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
RoHS: Compliant		1
  • 1000:$68.1500
  • 500:$71.7300
  • 100:$74.6800
  • 25:$77.8800
  • 1:$83.8700
MRFE6VP100HR5
DISTI # MRFE6VP100HR5		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		393
  • 1:$86.6000
  • 10:$80.0400
  • 25:$77.6800
MRFE6VP100HR5
DISTI # 2776256		NXP SemiconductorsTRANSISTOR, RF, 133V, NI-780H-4L
RoHS: Compliant		35
  • 1:£65.3200
  • 5:£63.6400
  • 10:£61.9500
  • 50:£55.8300
MRFE6VP100HR5
DISTI # C1S233100301975		NXP SemiconductorsTrans RF MOSFET N-CH 133V 5-Pin Case 465M-01 T/R
RoHS: Compliant		23
  • 10:$77.0600
  • 1:$80.9800
MRFE6VP100HR5
DISTI # 2776256		NXP SemiconductorsTRANSISTOR, RF, 133V, NI-780H-4L
RoHS: Compliant		27
  • 1:$123.7400
  • 5:$119.6200
  • 10:$113.9200
  • 50:$110.4200
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Disponibilidad
Valores:
154
En orden:
2137
Ingrese la cantidad:
El precio actual de MRFE6VP100HR5 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
89,94 US$
89,94 US$
5
88,20 US$
441,00 US$
10
85,28 US$
852,80 US$
25
81,67 US$
2 041,75 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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