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IPZA60R120P7XKSA1

IPZA60R120P7XKSA1
Mfr. #:
IPZA60R120P7XKSA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET HIGH POWER_NEW
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPZA60R120P7XKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPZA60R120P7XKSA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
PG-TO-247-4
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
26 A
Rds On - Resistencia de la fuente de drenaje:
100 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Vgs - Voltaje puerta-fuente:
10 V
Qg - Carga de puerta:
36 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
95 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Tipo de transistor:
MOSFET de potencia
Marca:
Infineon Technologies
Otoño:
6 ns
Tipo de producto:
MOSFET
Hora de levantarse:
8 ns
Cantidad de paquete de fábrica:
240
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
81 ns
Tiempo típico de retardo de encendido:
21 ns
Parte # Alias:
IPZA60R120P7 SP001707744
Tags
IPZA, IPZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 600 V 120 mOhm Industrial Grade CoolMOS P7 Mosfet - TO-247-4
***et
Trans MOSFET N-CH 650V 26A 4-Pin TO-247 Tube
***ical
Trans MOSFET N-CH 600V 26A Tube
***ronik
N-CH 600V 26A 100mOhm TO247-4
***i-Key
MOSFET TO247-4
***ark
Mosfet, N-Ch, 600V, 26A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.1Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipationrohs Compliant: Yes
***ineon
Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 26A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:95W; Transistor Case Style:TO-247; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 600V, 26A, TO-247; Polarità Transistor:Canale N; Corrente Continua di Drain Id:26A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.1ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:95W; Modello Case Transistor:TO-247; No. di Pin:4Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
Parte # Mfg. Descripción Valores Precio
IPZA60R120P7XKSA1
DISTI # V99:2348_18786395		Infineon Technologies AG600V CoolMOS¿ P7 Power Transistor190
  • 2500:$2.2879
  • 1200:$2.3290
  • 1000:$2.4650
  • 720:$2.6040
  • 500:$2.8090
  • 250:$2.9600
  • 240:$3.0630
  • 100:$3.2310
  • 10:$3.4230
  • 1:$3.8040
IPZA60R120P7XKSA1
DISTI # IPZA60R120P7XKSA1-ND		Infineon Technologies AGMOSFET TO247-4
RoHS: Compliant
Min Qty: 1
Container: Tube		240In Stock
  • 1200:$2.7608
  • 720:$3.2735
  • 240:$4.0425
  • 10:$4.9300
  • 1:$5.5200
IPZA60R120P7XKSA1
DISTI # 31223478		Infineon Technologies AG600V CoolMOS¿ P7 Power Transistor240
  • 2400:$2.1287
  • 482:$2.1984
  • 242:$2.2944
  • 240:$2.3904
IPZA60R120P7XKSA1
DISTI # 31231760		Infineon Technologies AG600V CoolMOS¿ P7 Power Transistor190
  • 2500:$2.4595
  • 1200:$2.5037
  • 1000:$2.6499
  • 720:$2.7993
  • 500:$3.0197
  • 250:$3.1820
  • 240:$3.2927
  • 100:$3.4733
  • 10:$3.6797
  • 3:$4.0893
IPZA60R120P7XKSA1
DISTI # IPZA60R120P7XKSA1		Infineon Technologies AGTrans MOSFET N-CH 650V 26A 4-Pin TO-247 Tube - Rail/Tube (Alt: IPZA60R120P7XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 240
  • 240:$2.4900
  • 242:$2.3900
  • 482:$2.2900
  • 1200:$2.2900
  • 2400:$2.1900
IPZA60R120P7XKSA1
DISTI # SP001707744		Infineon Technologies AGTrans MOSFET N-CH 650V 26A 4-Pin TO-247 Tube (Alt: SP001707744)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 240
  • 1:€2.3900
  • 10:€2.2900
  • 25:€2.2900
  • 50:€2.0900
  • 100:€2.0900
  • 500:€2.0900
  • 1000:€2.0900
IPZA60R120P7XKSA1
DISTI # 57AC6821		Infineon Technologies AGMOSFET, N-CH, 600V, 26A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:26A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.1ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power DissipationRoHS Compliant: Yes240
  • 500:$2.3800
  • 250:$2.6500
  • 100:$2.7900
  • 50:$2.9400
  • 25:$3.0800
  • 10:$3.2200
  • 1:$3.7900
IPZA60R120P7XKSA1Infineon Technologies AGN-Channel 600 V 120 mOhm Industrial Grade CoolMOS P7 Mosfet - TO-247-4
RoHS: Not Compliant		240Tube
  • 240:$2.3700
IPZA60R120P7XKSA1
DISTI # 726-IPZA60R120P7XKSA		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		240
  • 1:$4.7400
  • 10:$4.0300
  • 100:$3.4900
  • 250:$3.3100
  • 500:$2.9700
  • 1000:$2.5100
  • 2500:$2.3800
IPZA60R120P7XKSA1
DISTI # 2862304		Infineon Technologies AGMOSFET, N-CH, 600V, 26A, TO-247
RoHS: Compliant		240
  • 500:£2.3100
  • 250:£2.5700
  • 100:£2.7100
  • 10:£3.1400
  • 1:£4.1100
IPZA60R120P7XKSA1
DISTI # 2862304		Infineon Technologies AGMOSFET, N-CH, 600V, 26A, TO-247
RoHS: Compliant		240
  • 1200:$4.1000
  • 720:$4.8700
  • 240:$6.0100
  • 10:$7.3300
  • 1:$8.2000
IPZA60R120P7XKSA1
DISTI # XSFP00000164271		Infineon Technologies AG 
RoHS: Compliant		720 in Stock0 on Order
  • 720:$4.3100
  • 240:$4.7400
IPZA60R120P7XKSA1
DISTI # XSKDRABS0023710		Infineon Technologies AG"PowerField-EffectTransistor,100AI(D),100V,0.0054ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,TO-220AB"
RoHS: Compliant		180 in Stock0 on Order
  • 240:$3.5760
Imagen Parte # Descripción
EVAL45W19VFLYBP7TOBO1

Mfr.#: EVAL45W19VFLYBP7TOBO1

OMO.#: OMO-EVAL45W19VFLYBP7TOBO1

 Power Management IC Development Tools 45W adapter evaluation board
EVAL45W19VFLYBP7TOBO1

Mfr.#: EVAL45W19VFLYBP7TOBO1

OMO.#: OMO-EVAL45W19VFLYBP7TOBO1-INFINEON-TECHNOLOGIES

 EVAL KIT 800V COOLMOS P7
Disponibilidad
Valores:
240
En orden:
2223
Ingrese la cantidad:
El precio actual de IPZA60R120P7XKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
4,74 US$
4,74 US$
10
4,03 US$
40,30 US$
100
3,49 US$
349,00 US$
250
3,31 US$
827,50 US$
500
2,97 US$
1 485,00 US$
1000
2,51 US$
2 510,00 US$
2500
2,38 US$
5 950,00 US$
5000
2,29 US$
11 450,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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