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SI2356DS-T1-GE3

SI2356DS-T1-GE3
Mfr. #:
SI2356DS-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET N-CH 40V 4.3A SOT-23
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI2356DS-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
SI2356DS-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante
VISHAY
categoria de producto
FET - Single
Serie
TrincheraFETR
embalaje
Embalaje alternativo de Digi-ReelR
Unidad de peso
0.050717 oz
Estilo de montaje
SMD / SMT
Nombre comercial
TrenchFET
Paquete-Estuche
TO-236-3, SC-59, SOT-23-3
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
1 Channel
Paquete de dispositivo de proveedor
TO-236
Configuración
Único
Tipo FET
Canal N MOSFET, óxido metálico
Potencia máxima
1.7W
Tipo transistor
1 N-Channel
Drenaje-a-fuente-voltaje-Vdss
40V
Entrada-Capacitancia-Ciss-Vds
370pF @ 20V
Función FET
Estándar
Corriente-Continuo-Drenaje-Id-25 ° C
4.3A (Tc)
Rds-On-Max-Id-Vgs
51 mOhm @ 3.2A, 10V
Vgs-th-Max-Id
1.5V @ 250μA
Puerta-Carga-Qg-Vgs
13nC @ 10V
Disipación de potencia Pd
1.7 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
53 ns
Hora de levantarse
52 ns
Vgs-Puerta-Fuente-Voltaje
12 V
Id-corriente-de-drenaje-continua
4.3 A
Vds-Drain-Source-Breakdown-Voltage
40 V
Vgs-th-Gate-Source-Threshold-Voltage
1.5 V
Resistencia a la fuente de desagüe de Rds
56 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
18 ns
Tiempo de retardo de encendido típico
10 ns
Qg-Gate-Charge
8.1 nC
Transconductancia directa-Mín.
13 S
Tags
SI235, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Si2356DS Series 40 V 3.2 A 51 mOhm Surface Mount N-Channel Mosfet - SOT-23-3
***ical
Trans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R
***ark
N-Ch MOSFET SOT-23 copper 40V 51mohm @ 10V
***et
N-CH MOSFET SOT-23 COPPER 40V 51MOHM @ 10V
***i-Key
MOSFET N-CH 40V 4.3A SOT-23
***ronik
N-CHANNEL-FET 4,3A 40V SOT23
***ied Electronics & Automation
40V .051ohm@10V 4.3A N-Ch T-FET
***
P-CHANNEL 40-V (D-S)
***ment14 APAC
MOSFET, N-CH, 40V, 4.3A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.042ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:1.7W; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2016)
***nell
MOSFET, N-CH, 40V, 4.3A, SOT-23; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:4.3A; Napięcie drenu / źródła Vds:40V; Rezystancja przewodzenia Rds(on):0.042ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:1.5V; Straty mocy Pd:1.7W; Rodzaj obudowy tranzystora:SOT-23; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (20-Jun-2016)
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Parte # Mfg. Descripción Valores Precio
SI2356DS-T1-GE3
DISTI # V72:2272_09216727		Vishay IntertechnologiesTrans MOSFET N-CH 40V 3.2A 3-Pin SOT-23 T/R
RoHS: Compliant		2757
  • 1000:$0.1356
  • 500:$0.1789
  • 250:$0.2021
  • 100:$0.2246
  • 25:$0.3306
  • 10:$0.3674
  • 1:$0.5266
SI2356DS-T1-GE3
DISTI # V36:1790_09216727		Vishay IntertechnologiesTrans MOSFET N-CH 40V 3.2A 3-Pin SOT-23 T/R
RoHS: Compliant		0
    SI2356DS-T1-GE3
    DISTI # SI2356DS-T1-GE3CT-ND    		Vishay SiliconixMOSFET N-CH 40V 4.3A SOT-23
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		87569In Stock
    • 1000:$0.1289
    • 500:$0.1718
    • 100:$0.2291
    • 10:$0.3370
    • 1:$0.4200
    SI2356DS-T1-GE3
    DISTI # SI2356DS-T1-GE3DKR-ND    		Vishay SiliconixMOSFET N-CH 40V 4.3A SOT-23
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		87569In Stock
    • 1000:$0.1289
    • 500:$0.1718
    • 100:$0.2291
    • 10:$0.3370
    • 1:$0.4200
    SI2356DS-T1-GE3
    DISTI # SI2356DS-T1-GE3TR-ND    		Vishay SiliconixMOSFET N-CH 40V 4.3A SOT-23
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		87000In Stock
    • 75000:$0.0890
    • 30000:$0.0925
    • 15000:$0.1008
    • 6000:$0.1077
    • 3000:$0.1147
    SI2356DS-T1-GE3
    DISTI # 32318889    		Vishay IntertechnologiesTrans MOSFET N-CH 40V 3.2A 3-Pin SOT-23 T/R
    RoHS: Compliant    		2757
    • 76:$0.5266
    SI2356DS-T1-GE3
    DISTI # SI2356DS-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R - Cut TR (SOS) (Alt: SI2356DS-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 1
    Container: Cut Tape    		Americas - 6000
    • 1500:$0.0988
    • 750:$0.1018
    • 375:$0.1051
    • 188:$0.1085
    • 94:$0.1122
    • 47:$0.1161
    • 1:$0.1204
    SI2356DS-T1-GE3
    DISTI # SI2356DS-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R (Alt: SI2356DS-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 3000
    • 30000:€0.0859
    • 18000:€0.0929
    • 12000:€0.0999
    • 6000:€0.1169
    • 3000:€0.1709
    SI2356DS-T1-GE3
    DISTI # SI2356DS-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R (Alt: SI2356DS-T1-GE3)
    RoHS: Compliant
    Min Qty: 6000
    Container: Tape and Reel    		Asia - 0
      SI2356DS-T1-GE3
      DISTI # SI2356DS-T1-GE3      		Vishay IntertechnologiesTrans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2356DS-T1-GE3)
      RoHS: Not Compliant
      Min Qty: 3000
      Container: Reel      		Americas - 0
      • 30000:$0.0839
      • 18000:$0.0869
      • 12000:$0.0889
      • 6000:$0.0929
      • 3000:$0.0959
      SI2356DS-T1-GE3
      DISTI # 05AC9483      		Vishay IntertechnologiesMOSFET, N-CH, 40V, 4.3A, SOT-23,Transistor Polarity:N Channel,Continuous Drain Current Id:4.3A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.042ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.5V,Power RoHS Compliant: Yes27000
      • 1:$0.1370
      • 3000:$0.1370
      SI2356DS-T1-GE3
      DISTI # 01AC4982      		Vishay IntertechnologiesMOSFET, N-CH, 40V, 4.3A, SOT-23,Transistor Polarity:N Channel,Continuous Drain Current Id:4.3A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.042ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.5V,Power RoHS Compliant: Yes8890
      • 1000:$0.1550
      • 500:$0.1960
      • 250:$0.2340
      • 100:$0.2720
      • 50:$0.3280
      • 25:$0.3830
      • 1:$0.4810
      SI2356DS-T1-GE3
      DISTI # 70459514      		Vishay Siliconix40V .051ohm@10V 4.3A N-Ch T-FET
      RoHS: Compliant      		0
      • 25:$0.1880
      • 250:$0.1790
      • 500:$0.1700
      • 750:$0.1610
      • 1000:$0.1340
      SI2356DS-T1-GE3
      DISTI # 78-SI2356DS-T1-GE3      		Vishay IntertechnologiesMOSFET 40V Vds 12V Vgs SOT-23
      RoHS: Compliant      		76574
      • 1:$0.4300
      • 10:$0.2930
      • 100:$0.1970
      • 500:$0.1580
      • 1000:$0.1190
      • 3000:$0.1090
      • 6000:$0.1020
      • 9000:$0.0950
      • 24000:$0.0880
      SI2356DS-T1-GE3
      DISTI # TMOSS6841      		Vishay IntertechnologiesN-CHANNEL-FET 4,3A 40V SOT23
      RoHS: Compliant      		Stock DE - 0Stock HK - 0Stock US - 0
      • 3000:$0.1301
      • 6000:$0.1226
      • 12000:$0.1152
      • 18000:$0.1041
      • 24000:$0.1003
      SI2356DS-T1-GE3Vishay IntertechnologiesMOSFET 40V Vds 12V Vgs SOT-23
      RoHS: Compliant      		Americas - 54000
        SI2356DS-T1-GE3
        DISTI # 2679679        		Vishay IntertechnologiesMOSFET, N-CH, 40V, 4.3A, SOT-2315000
        • 9000:£0.0763
        • 3000:£0.0889
        SI2356DS-T1-GE3
        DISTI # 2679679        		Vishay IntertechnologiesMOSFET, N-CH, 40V, 4.3A, SOT-23
        RoHS: Compliant        		15000
        • 12000:$0.1260
        • 9000:$0.1300
        • 6000:$0.1310
        • 3000:$0.1350
        SI2356DS-T1-GE3
        DISTI # 2646369        		Vishay IntertechnologiesMOSFET, N-CH, 40V, 4.3A, SOT-23
        RoHS: Compliant        		8230
        • 1000:$0.1950
        • 500:$0.2590
        • 100:$0.3460
        • 10:$0.5080
        • 1:$0.6300
        Imagen Parte # Descripción
        SI2356DS-T1-GE3

        Mfr.#: SI2356DS-T1-GE3

        OMO.#: OMO-SI2356DS-T1-GE3

        		 MOSFET 40V Vds 12V Vgs SOT-23
        SI2356DS-T1-GE3

        Mfr.#: SI2356DS-T1-GE3

        OMO.#: OMO-SI2356DS-T1-GE3-VISHAY

        		 MOSFET N-CH 40V 4.3A SOT-23
        SI2356DS-T1-GE3-CUT TAPE

        Mfr.#: SI2356DS-T1-GE3-CUT TAPE

        OMO.#: OMO-SI2356DS-T1-GE3-CUT-TAPE-1190

        		 Nuevo y original
        Disponibilidad
        Valores:
        Available
        En orden:
        5500
        Ingrese la cantidad:
        El precio actual de SI2356DS-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        0,13 US$
        0,13 US$
        10
        0,12 US$
        1,20 US$
        100
        0,11 US$
        11,33 US$
        500
        0,11 US$
        53,50 US$
        1000
        0,10 US$
        100,70 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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