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IPD075N03LGATMA1

IPD075N03LGATMA1
Mfr. #:
IPD075N03LGATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 30V 50A DPAK-2
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPD075N03LGATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-252-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
50 A
Rds On - Resistencia de la fuente de drenaje:
6.3 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
18 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
47 W
Configuración:
Único
Nombre comercial:
OptiMOS
Embalaje:
Carrete
Altura:
2.3 mm
Longitud:
6.5 mm
Serie:
OptiMOS 3
Tipo de transistor:
1 N-Channel
Ancho:
6.22 mm
Marca:
Infineon Technologies
Transconductancia directa - Mín .:
61 S
Otoño:
2.8 ns
Tipo de producto:
MOSFET
Hora de levantarse:
3.6 ns
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Parte # Alias:
G IPD075N03L IPD75N3LGXT SP000680634
Unidad de peso:
0.139332 oz
Tags
IPD075N03LG, IPD075, IPD07, IPD0, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
On a Reel of 2500, N-Channel MOSFET, 50 A, 30 V, 3-Pin DPAK Infineon IPD075N03LGATMA1
***ical
Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) DPAK T/R
***et Europe
Trans MOSFET N-CH 30V 50A 3-Pin TO-252 T/R
***i-Key
MOSFET N-CH 30V 50A TO252-3
***ark
MOSFET, N CH, 50A, 30V, PG-TO252-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:47W; Operating Temperature Range:-55°C to +175°C; ;RoHS Compliant: Yes
***nell
MOSFET, N CH, 50A, 30V, PG-TO252-3; Transistor Polarity:N; Current Id Max:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.3mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Power Dissipation:47W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO252; No. of Pins:3; Transistor Type:Power MOSFET
***ment14 APAC
MOSFET, N CH, 50A, 30V, PG-TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:47W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:50A; Power Dissipation Pd:47W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
Parte # Mfg. Descripción Valores Precio
IPD075N03LGATMA1
DISTI # V72:2272_06391043		Infineon Technologies AGTrans MOSFET N-CH 30V 50A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		1607
  • 75000:$0.2616
  • 30000:$0.2665
  • 15000:$0.2713
  • 6000:$0.2762
  • 3000:$0.2811
  • 1000:$0.2859
  • 500:$0.3513
  • 250:$0.3738
  • 100:$0.3878
  • 50:$0.4087
  • 25:$0.4541
  • 10:$0.5550
  • 1:$0.7506
IPD075N03LGATMA1
DISTI # IPD075N03LGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 30V 50A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		971In Stock
  • 500:$0.3648
  • 100:$0.4064
  • 10:$0.5080
  • 1:$0.6900
IPD075N03LGATMA1
DISTI # IPD075N03LGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 30V 50A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Limited Supply - Call
    IPD075N03LGATMA1
    DISTI # IPD075N03LGATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 30V 50A TO252-3
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 2500:$0.3251
    IPD075N03LGATMA1
    DISTI # 26195730    		Infineon Technologies AGTrans MOSFET N-CH 30V 50A 3-Pin(2+Tab) DPAK T/R
    RoHS: Compliant    		1607
    • 24:$0.7506
    IPD075N03LGXT
    DISTI # IPD075N03LGATMA1    		Infineon Technologies AGTrans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD075N03LGATMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 25000:$0.2709
    • 15000:$0.2759
    • 10000:$0.2849
    • 5000:$0.2959
    • 2500:$0.3069
    IPD075N03LGATMA1
    DISTI # 13AC9040    		Infineon Technologies AGMOSFET, N-CH, 30V, 50A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0063ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power RoHS Compliant: Yes25
    • 1000:$0.3450
    • 500:$0.3740
    • 250:$0.4030
    • 100:$0.4310
    • 50:$0.5100
    • 25:$0.5900
    • 10:$0.6690
    • 1:$0.7980
    IPD075N03LGATMA1
    DISTI # 726-IPD075N03LGATMA1    		Infineon Technologies AGMOSFET N-Ch 30V 50A DPAK-2
    RoHS: Compliant    		20
    • 1:$0.7900
    • 10:$0.6620
    • 100:$0.4270
    • 1000:$0.3420
    • 2500:$0.2890
    • 10000:$0.2780
    • 25000:$0.2670
    IPD075N03LGATMA1
    DISTI # 1107437P    		Infineon Technologies AGMOSFET N-CHANNEL OPTIMOS-3 30V 50A TO252, RL360
    • 4000:£0.2370
    • 1000:£0.2460
    • 400:£0.2730
    IPD075N03LGATMA1
    DISTI # 2725847    		Infineon Technologies AGMOSFET, N-CH, 30V, 50A, TO-2521485
    • 500:£0.3040
    • 250:£0.3170
    • 100:£0.3290
    • 10:£0.4690
    • 1:£0.6600
    IPD075N03LGATMA1
    DISTI # 2725847    		Infineon Technologies AGMOSFET, N-CH, 30V, 50A, TO-252
    RoHS: Compliant    		5
    • 500:$0.5500
    • 100:$0.6130
    • 10:$0.7660
    • 1:$1.0400
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    Disponibilidad
    Valores:
    Available
    En orden:
    1500
    Ingrese la cantidad:
    El precio actual de IPD075N03LGATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,79 US$
    0,79 US$
    10
    0,66 US$
    6,62 US$
    100
    0,43 US$
    42,70 US$
    1000
    0,34 US$
    342,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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