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AFT27S010NT1

AFT27S010NT1
Mfr. #:
AFT27S010NT1
Fabricante:
NXP / Freescale
Descripción:
RF MOSFET Transistors Airfast RF Pwr LDMOS Trx, .7-3.6GHz 1.26W
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
AFT27S010NT1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
AFT27S010NT1 más información
Atributo del producto
Valor de atributo
Fabricante:
NXP
Categoria de producto:
Transistores RF MOSFET
Polaridad del transistor:
Canal N
Tecnología:
Si
Id - Corriente de drenaje continua:
90 mA
Vds - Voltaje de ruptura de drenaje-fuente:
- 500 mV, 65 V
Ganar:
21.7 dB
Potencia de salida:
1.26 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PLD-1.5W
Embalaje:
Carrete
Frecuencia de operación:
100 MHz to 3.6 GHz
Escribe:
RF Power MOSFET
Marca:
NXP / Freescale
Número de canales:
1 Channel
Sensible a la humedad:
Yes
Tipo de producto:
Transistores RF MOSFET
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Vgs - Voltaje puerta-fuente:
10 V
Vgs th - Voltaje umbral puerta-fuente:
1.2 V
Parte # Alias:
935317972515
Unidad de peso:
0.009877 oz
Tags
AFT27S010, AFT27S01, AFT27, AFT2, AFT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***escale Semiconductor
Airfast RF Power LDMOS Transistor, 728-2700 MHz, 1.26 W Avg., 28 V
***W
RF Power Transistor,100 to 3600 MHz, 10 W, Typ Gain in dB is 21.7 @ 2170 MHz, 28 V, LDMOS, SOT1811
***et
AIRFAST RF POWER LDMOS TRANSISTOR, 728-2700 MHZ, 1.26 W AVG.
***ical
Trans RF MOSFET N-CH 65V 3-Pin PLD-1.5W T/R
***et Europe
Trans MOSFET N-CH 65V 2-Pin PLD-1.5W T/R
***i-Key
IC RF TRANSISTOR PLD-1.5W
***hardson RFPD
RF POWER TRANSISTOR
***ark
Rf Fet, 65V, 728Mhz-3600Mhz, Pld-1.5W; Drain Source Voltage Vds:65V; Continuous Drain Current Id:-; Power Dissipation Pd:-; Operating Frequency Min:728Mhz; Operating Frequency Max:3600Mhz; Rf Transistor Case:pld-1.5W; No. Of Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. RF FET, 65V, 728MHZ-3600MHZ, PLD-1.5W; Drain Source Voltage Vds:65V; Continuous Drain Current Id:-; Power Dissipation Pd:-; Operating Frequency Min:728MHz; Operating Frequency Max:3600MHz; RF Transistor Case:PLD-1.5W; No. of Pins:2Pins; Operating Temperature Max:150°C; Product Range:AFT27S010N Series; MSL:MSL 3 - 168 hours; SVHC:No SVHC (15-Jan-2019)
***nell
RF FET, 65V, 728MHZ-3600MHZ, PLD-1.5W; Tensione Drain Source Vds:65V; Corrente Continua di Drain Id:-; Dissipazione di Potenza Pd:-; Frequenza Operativa Min:728MHz; Frequenza Operativa Max:3600MHz; Case Transistor RF:PLD-1.5W; No. di Pin:2Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:AFT27S010N Series; Livello di Sensibilità all'Umidità (MSL):MSL 3 - 168 ore; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)
MRF15xx Lateral N-Ch Broadband RF Power MOSFETs
NXP MRF15xx Lateral N-Channel Broadband RF Power MOSFETs are designed for broadband commercial and industrial applications with frequencies of 175 MHz or 520 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 7.5 volt or 12.5 volt portable FM equipment.Learn More
AFT27S010NT1 RF Power LDMOS Transistor
NXP Semiconductors AFT27S010NT1 RF Power LDMOS Transistor is designed for cellular base station applications covering the frequency range from 728MHz to 3600MHz. This LDMOS transistor offers greater negative Gate-Source voltage range for improved Class C operation. The AFT27S010NT1 transistor is designed for Digital Predistortion Error Correction systems. This transistor operates at a temperature range from -40°C to 150°C and offers a typical gain of 21.7dB.
Parte # Mfg. Descripción Valores Precio
AFT27S010NT1
DISTI # V72:2272_07185778		NXP SemiconductorsTrans RF MOSFET N-CH 65V 3-Pin PLD-1.5W T/R
RoHS: Compliant		797
  • 500:$10.1000
  • 250:$10.9520
  • 100:$11.8430
  • 25:$13.7040
  • 10:$14.1710
  • 1:$15.4930
AFT27S010NT1
DISTI # AFT27S010NT1CT-ND		NXP SemiconductorsFET RF NCH 65V 2700MHZ PLD1.5W
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1045In Stock
  • 500:$11.1021
  • 100:$12.4803
  • 10:$14.7770
  • 1:$16.0800
AFT27S010NT1
DISTI # AFT27S010NT1DKR-ND		NXP SemiconductorsFET RF NCH 65V 2700MHZ PLD1.5W
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1045In Stock
  • 500:$11.1021
  • 100:$12.4803
  • 10:$14.7770
  • 1:$16.0800
AFT27S010NT1
DISTI # AFT27S010NT1TR-ND		NXP SemiconductorsFET RF NCH 65V 2700MHZ PLD1.5W
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		1000In Stock
  • 1000:$9.8867
AFT27S010NT1
DISTI # 25766876		NXP SemiconductorsTrans RF MOSFET N-CH 65V 3-Pin PLD-1.5W T/R
RoHS: Compliant		797
  • 500:$10.1000
  • 250:$10.9520
  • 100:$11.8430
  • 25:$13.7040
  • 10:$14.1710
  • 1:$15.4930
AFT27S010NT1
DISTI # AFT27S010NT1		NXP SemiconductorsTrans MOSFET N-CH 65V 2-Pin PLD-1.5W T/R (Alt: AFT27S010NT1)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Asia - 0
  • 1000:$9.0958
  • 2000:$8.8431
  • 3000:$8.6041
  • 5000:$8.3777
  • 10000:$8.2689
  • 25000:$8.1629
  • 50000:$7.9588
AFT27S010NT1
DISTI # AFT27S010NT1		NXP SemiconductorsTrans MOSFET N-CH 65V 2-Pin PLD-1.5W T/R - Tape and Reel (Alt: AFT27S010NT1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$10.7900
  • 2000:$10.3900
  • 4000:$9.9900
  • 6000:$9.5900
  • 10000:$9.3900
AFT27S010NT1
DISTI # 60AC7751		NXP Semiconductors 988
  • 1:$16.0800
  • 10:$14.7800
  • 25:$14.1300
  • 50:$13.3100
  • 100:$12.4900
  • 250:$11.1500
  • 500:$10.7800
AFT27S010NT1
DISTI # 841-AFT27S010NT1		NXP SemiconductorsRF MOSFET Transistors Airfast RF Pwr LDMOS Trx, .7-3.6GHz 1.26W
RoHS: Compliant		1016
  • 1:$16.0800
  • 10:$14.7800
  • 25:$14.1300
  • 100:$12.4900
  • 250:$11.1500
  • 500:$10.7800
  • 1000:$9.8900
AFT27S010NT1
DISTI # AFT27S010NT1		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		82109
  • 1:$16.6100
  • 10:$15.0200
  • 25:$14.2000
AFT27S010NT1
DISTI # 2890594		NXP SemiconductorsRF FET, 65V, 728MHZ-3600MHZ, PLD-1.5W
RoHS: Compliant		988
  • 1:£12.5200
  • 5:£12.1800
  • 10:£11.1900
  • 50:£10.3200
  • 100:£9.4500
AFT27S010NT1
DISTI # 2890594		NXP SemiconductorsRF FET, 65V, 728MHZ-3600MHZ, PLD-1.5W
RoHS: Compliant		988
  • 1:$25.4500
  • 10:$23.3900
  • 100:$19.7500
  • 500:$17.5700
AFT27S010NT1
DISTI # C1S537101527111		NXP SemiconductorsTrans RF MOSFET N-CH 65V 3-Pin PLD-1.5W T/R
RoHS: Compliant		881
  • 250:$10.9520
  • 25:$13.7040
  • 1:$15.4930
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Disponibilidad
Valores:
Available
En orden:
1985
Ingrese la cantidad:
El precio actual de AFT27S010NT1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
16,08 US$
16,08 US$
10
14,78 US$
147,80 US$
25
14,13 US$
353,25 US$
100
12,49 US$
1 249,00 US$
250
11,15 US$
2 787,50 US$
500
10,78 US$
5 390,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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