NUS3116MTR2G

NUS3116MTR2G
Mfr. #:
NUS3116MTR2G
Fabricante:
ON Semiconductor
Descripción:
MOSFET OSPI QUAD BUS BUFFER
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NUS3116MTR2G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NUS3116MTR2G DatasheetNUS3116MTR2G Datasheet (P4-P6)NUS3116MTR2G Datasheet (P7-P9)NUS3116MTR2G Datasheet (P10)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
DFN-8
Número de canales:
1 Channel
Polaridad del transistor:
P-Channel
Vds - Voltaje de ruptura de drenaje-fuente:
12 V
Id - Corriente de drenaje continua:
4.4 A
Rds On - Resistencia de la fuente de drenaje:
32 mOhms
Pd - Disipación de energía:
1.7 W
Configuración:
Único
Embalaje:
Carrete
Producto:
Pequeña señal MOSFET
Tipo de transistor:
1 P-Channel
Marca:
EN Semiconductor
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Unidad de peso:
0.001319 oz
Tags
NUS3, NUS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Power MOSFET 12V 6.2A 110 mOhm Dual P-Channel DFN8 with PNP Low VCE Transistors
***th Star Micro
NUS3116MT: Overvoltage Protection IC with Integrated 30V 1A 110 mOhm Dual P-Channel DFN8
***ical
Main Switch Power MOSFET and Dual Charging BJT 8-Pin WDFN T/R
*** Stop Electro
Small Signal Field-Effect Transistor, 4.4A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
***ser
MOSFETs- Power and Small Signal OSPI QUAD BUS BUFFER
***i-Key
IC MOSFET MAIN SW DUAL BJT 8-DFN
***ark
Battery Management IC; Battery Management Function:Charger; Input Voltage Primary Max:-12V; Supply Voltage Min:2.3V; Supply Voltage Max:15V; Termination Type:SMD; Package/Case:DFN; No. of Pins:8 ;RoHS Compliant: Yes
Parte # Mfg. Descripción Valores Precio
NUS3116MTR2G
DISTI # NUS3116MTR2GOSTR-ND
ON SemiconductorIC MOSFET MAIN SW DUAL BJT 8-DFN
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    NUS3116MTR2G
    DISTI # NUS3116MTR2GOSCT-ND
    ON SemiconductorIC MOSFET MAIN SW DUAL BJT 8-DFN
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      NUS3116MTR2G
      DISTI # 863-NUS3116MTR2G
      ON SemiconductorMOSFET OSPI QUAD BUS BUFFER
      RoHS: Compliant
      0
        NUS3116MTR2GON Semiconductor 
        RoHS: Not Compliant
        62795
        • 1000:$0.7400
        • 500:$0.7700
        • 100:$0.8100
        • 25:$0.8400
        • 1:$0.9100
        NUS3116MTR2GON SemiconductorINSTOCK1913
          Imagen Parte # Descripción
          NUS3116MTR2G

          Mfr.#: NUS3116MTR2G

          OMO.#: OMO-NUS3116MTR2G

          MOSFET OSPI QUAD BUS BUFFER
          NUS3116MT

          Mfr.#: NUS3116MT

          OMO.#: OMO-NUS3116MT-1190

          Nuevo y original
          NUS3116MTR2G

          Mfr.#: NUS3116MTR2G

          OMO.#: OMO-NUS3116MTR2G-ON-SEMICONDUCTOR

          IC MOSFET MAIN SW DUAL BJT 8-DFN
          Disponibilidad
          Valores:
          Available
          En orden:
          5000
          Ingrese la cantidad:
          El precio actual de NUS3116MTR2G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
          Empezar con
          Top