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VMM90-09F

VMM90-09F
Mfr. #:
VMM90-09F
Fabricante:
Littelfuse
Descripción:
Discrete Semiconductor Modules 90 Amps 900V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
VMM90-09F Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
VMM90-09F DatasheetVMM90-09F Datasheet (P4)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
Módulos de semiconductores discretos
RoHS:
Y
Producto:
Módulos de semiconductores de potencia
Escribe:
HiPerFET
Vf - Voltaje directo:
1.1 V
Estilo de montaje:
Montaje con tornillo
Paquete / Caja:
Y3-Li
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
VMM90
Embalaje:
A granel
Marca:
IXYS
Tipo de producto:
Módulos de semiconductores discretos
Cantidad de paquete de fábrica:
2
Subcategoría:
Módulos de semiconductores discretos
Unidad de peso:
8 oz
Tags
VMM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual N- Channel 900 V 85 A 76 mOhm Power MOSFET Module
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Trans MOSFET N-CH 900V 85A 9-Pin Y3-Li
***ukat
N-Ch-Half-Bridge 900V 85A 0,076R Y3-Li
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FF150R12RT4 Series 1200 V 150 A 790 W Surface Mount IGBT Module
***ark
Igbt, Module, N-Ch, 1.2Kv, 150A; Transistor Polarity:n Channel; Dc Collector Current:150A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:790W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
***trelec
Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.75 / Collector-Emitter Voltage (Vceo) kV = 1.2 / Configuration = Dual / Channel Type = N-Channel / Power Dissipation (Pd) W = 790 / Continuous Collector Current (Ic) A = 150 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Emitter Leakage Current nA = 100 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tray
***ineon
Our well-known 34 mm 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled 4 Diode are the right choice for your design. | Summary of Features: Extended Operation Temperature T vj op; Low Switching Losses; Low V CEsat; T vj op = 150C; V CEsat with positive Temperature Coefficient; Isolated Base Plate; Standard Housing | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding
***ical
Trans IGBT Module N-CH 1200V 105A 350000mW 24-Pin EconoPIM3 Tray
***ineon SCT
EconoPIM™ 3 1200V three phase PIM IGBT module with IGBT3 and NTC, AG-ECONO3-3, RoHS
***ment14 APAC
IGBT MODULE, 1200V, ECONOPIM; Transistor Polarity:N Channel; DC Collector Current:105A; Emitter Saturation Voltage Vce(on):2.3V; Power
***ark
IGBT MODULE, 1200V, ECONOPIM; Continuous Collector Current:105A; Collector Emitter Saturation Voltage:2.3V; Power Dissipation:350W; Operating Temperature Max:125°C; IGBT Termination:Press Fit; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes
***ineon
EconoPIM 3 1200V three phase PIM IGBT module with IGBT3 and NTC | Summary of Features: Low stray inductance module design; High reliability and power density; Copper base plate for optimized heat spread; Solderable pins; Low switching losses; High switching frequency; RoHS-compliant modules | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility; Fast, reliable and low cost mounting concept | Target Applications: drives; medical; induction; aircon
***ark
IGBT Array & Module Transistor, Dual NPN, 580 A, 1.75 V, 2.4 kW, 1.2 kV, Module
*** Source Electronics
Trans IGBT Module N-CH 1200V 580A 2400000mW 7-Pin 62MM-1 Tray / IGBT MODULE 1200V 450A
***ure Electronics
FF450R12KT4 Series 1200 V 580 A Trench Field-Stop IGBT Module
***nell
IGBT MODULE, DUAL NPN, 1.75V, 580A; Transistor Polarity: Dual NPN; DC Collector Current: 580A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: 2.4kW; Collector Emitter Voltage V(br)ceo: 1.2kV; Trans
***ineon
Our well-known 62mm C-series 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled diode are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 150 C; Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding
***icontronic
Power Bipolar Transistor, 100A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon
***ure Electronics
NPN 125 V 100 A Surface Mount Transistor Power Module - ISOTOP
*** Electronic Components
Bipolar Transistors - BJT NPN Power Module
***ow.cn
Trans GP BJT NPN 125V 100A 250000mW 4-Pin ISOTOP Tube
***nell
TRANSISTOR, NPN, ISOTOP; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 200V; Transition Frequency ft: -; Power Dissipation Pd: 250W; DC Collector Current: 100A; DC Current Gain hFE: 27hFE; Transistor Case Style
***ark
BIPOLAR TRANSISTOR, NPN, 200V; Transistor Polarity:NPN; Collector Emitter Voltage Max:200V; Continuous Collector Current:100A; Power Dissipation:250W; Transistor Mounting:Module; No. of Pins:4Pins; Transition Frequency:-; MSL:- RoHS Compliant: Yes
Parte # Mfg. Descripción Valores Precio
VMM90-09F
DISTI # VMM90-09F-ND		IXYS CorporationMOSFET 2N-CH 900V 85A Y3-LI
RoHS: Compliant
Min Qty: 2
Container: Box		Temporarily Out of Stock
  • 2:$203.1900
VMM90-09F
DISTI # 747-VMM90-09F		IXYS CorporationDiscrete Semiconductor Modules 90 Amps 900V
RoHS: Compliant		32
  • 1:$203.2100
  • 5:$198.6300
  • 10:$193.3900
  • 25:$186.3700
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Disponibilidad
Valores:
12
En orden:
1995
Ingrese la cantidad:
El precio actual de VMM90-09F es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
203,19 US$
203,19 US$
5
198,63 US$
993,15 US$
10
193,39 US$
1 933,90 US$
25
186,37 US$
4 659,25 US$
50
182,15 US$
9 107,50 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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