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IRFU13N20DPBF

IRFU13N20DPBF
Mfr. #:
IRFU13N20DPBF
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 200V 13A I-PAK
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRFU13N20DPBF Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
IRFU13N20DPBF más información
Atributo del producto
Valor de atributo
Fabricante
IR
categoria de producto
FET - Single
embalaje
Tubo
Unidad de peso
0.139332 oz
Estilo de montaje
A través del orificio
Paquete-Estuche
IPAK-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
110 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
10 ns
Hora de levantarse
27 ns
Vgs-Puerta-Fuente-Voltaje
30 V
Id-corriente-de-drenaje-continua
13 A
Vds-Drain-Source-Breakdown-Voltage
200 V
Resistencia a la fuente de desagüe de Rds
235 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
17 ns
Tiempo de retardo de encendido típico
11 ns
Qg-Gate-Charge
25 nC
Transconductancia directa-Mín.
6.2 S
Modo de canal
Mejora
Tags
IRFU13N, IRFU13, IRFU1, IRFU, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
200-250V HEXFET® Power MOSFETs
Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More
Parte # Mfg. Descripción Valores Precio
IRFU13N20DPBF
DISTI # V99:2348_13892676		Infineon Technologies AGTrans MOSFET N-CH 200V 13A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		2906
  • 9000:$0.3943
  • 3000:$0.4381
  • 1000:$0.4867
  • 500:$0.5950
  • 100:$0.6389
  • 10:$0.8195
  • 1:$0.9259
IRFU13N20DPBF
DISTI # IRFU13N20DPBF-ND		Infineon Technologies AGMOSFET N-CH 200V 13A I-PAK
RoHS: Compliant
Min Qty: 1
Container: Tube		5875In Stock
  • 1000:$0.5978
  • 500:$0.7572
  • 100:$0.9764
  • 10:$1.2350
  • 1:$1.3900
IRFU13N20DPBF
DISTI # 31335313		Infineon Technologies AGTrans MOSFET N-CH 200V 13A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		2906
  • 1000:$0.4867
  • 500:$0.5950
  • 100:$0.6389
  • 16:$0.8195
IRFU13N20DPBF
DISTI # 24161208		Infineon Technologies AGTrans MOSFET N-CH 200V 13A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		1980
  • 1000:$0.5136
  • 150:$0.6096
  • 22:$0.6720
IRFU13N20DPBF
DISTI # IRFU13N20DPBF		Infineon Technologies AGTrans MOSFET N-CH 200V 13A 3-Pin(3+Tab) IPAK - Rail/Tube (Alt: IRFU13N20DPBF)
RoHS: Compliant
Min Qty: 3000
Container: Tube		Americas - 0
  • 3000:$0.4169
  • 6000:$0.4019
  • 12000:$0.3869
  • 18000:$0.3739
  • 30000:$0.3679
IRFU13N20DPBF
DISTI # IRFU13N20DPBF		Infineon Technologies AGTrans MOSFET N-CH 200V 13A 3-Pin(3+Tab) IPAK (Alt: IRFU13N20DPBF)
RoHS: Compliant
Min Qty: 3000		Asia - 0
  • 3000:$0.4600
  • 6000:$0.4472
  • 9000:$0.4351
  • 15000:$0.4237
  • 30000:$0.4182
  • 75000:$0.4128
  • 150000:$0.4076
IRFU13N20DPBF
DISTI # 70018362		Infineon Technologies AGIRFU13N20DPBF N-channel MOSFET Module,13 A,200 V,3-Pin IPAK
RoHS: Compliant		0
  • 675:$1.4400
IRFU13N20DPBFInfineon Technologies AGSingle N-Channel 200 V 0.235 Ohm 38 nC HEXFET Power Mosfet - IPAK
RoHS: Compliant		2570Tube
  • 20:$0.5550
  • 200:$0.5000
  • 1000:$0.4250
IRFU13N20DPBF
DISTI # 942-IRFU13N20DPBF		Infineon Technologies AGMOSFET MOSFT 200V 13A 235mOhm 25nC
RoHS: Compliant		2828
  • 1:$1.1900
  • 10:$1.0200
  • 100:$0.7790
  • 500:$0.6890
  • 1000:$0.5440
IRFU13N20DPBF
DISTI # 8655847P		Infineon Technologies AGMOSFET N-CH 200V 13A HEXFET SMPS IPAK, TU445
  • 100:£0.5640
  • 250:£0.5310
  • 500:£0.4990
  • 1350:£0.3930
IRFU13N20DPBF
DISTI # C1S322000496783		Infineon Technologies AGTrans MOSFET N-CH 200V 13A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		2906
  • 1000:$0.4867
  • 500:$0.5950
  • 100:$0.6389
  • 10:$0.8195
Imagen Parte # Descripción
IRFU13N20DPBF

Mfr.#: IRFU13N20DPBF

OMO.#: OMO-IRFU13N20DPBF

 MOSFET MOSFT 200V 13A 235mOhm 25nC
IRFU130ATU

Mfr.#: IRFU130ATU

OMO.#: OMO-IRFU130ATU-1190

 Power Field-Effect Transistor, 13A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
IRFU13N15D

Mfr.#: IRFU13N15D

OMO.#: OMO-IRFU13N15D-INFINEON-TECHNOLOGIES

 MOSFET N-CH 150V 14A I-PAK
IRFU13N15DPBF

Mfr.#: IRFU13N15DPBF

OMO.#: OMO-IRFU13N15DPBF-1190

 MOSFET, 150V, 14A, 180 MOHM, 19 NC QG, D-PAK
IRFU13N20DPBF

Mfr.#: IRFU13N20DPBF

OMO.#: OMO-IRFU13N20DPBF-INFINEON-TECHNOLOGIES

 MOSFET N-CH 200V 13A I-PAK
Disponibilidad
Valores:
Available
En orden:
4000
Ingrese la cantidad:
El precio actual de IRFU13N20DPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,55 US$
0,55 US$
10
0,52 US$
5,24 US$
100
0,50 US$
49,67 US$
500
0,47 US$
234,55 US$
1000
0,44 US$
441,50 US$
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