SI4686DY-T1-GE3

SI4686DY-T1-GE3
Mfr. #:
SI4686DY-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET N-CH 30V 18.2A 8-SOIC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI4686DY-T1-GE3 Ficha de datos
Entrega:
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Más información:
SI4686DY-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante
VISHAY
categoria de producto
FET - Single
embalaje
Carrete
Alias ​​de parte
SI4686DY-GE3
Unidad de peso
0.006596 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
SOIC-Narrow-8
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
3 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
8 ns
Hora de levantarse
20 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
13.8 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Resistencia a la fuente de desagüe de Rds
9.5 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
20 ns
Tiempo de retardo de encendido típico
20 ns
Modo de canal
Mejora
Tags
SI4686DY-T1, SI4686DY-T, SI4686, SI468, SI46, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R
***ment14 APAC
N CHANNEL MOSFET, 30V, 18.2A, SOIC
***ponent Sense
MOSFET SO8S N 0.0144R 30V 13A~
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:18.2A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:3V ;RoHS Compliant: Yes
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Parte # Mfg. Descripción Valores Precio
SI4686DY-T1-GE3
DISTI # SI4686DY-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 30V 18.2A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
2500In Stock
  • 2500:$0.6930
SI4686DY-T1-GE3
DISTI # SI4686DY-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 30V 18.2A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2500In Stock
  • 1000:$0.7648
  • 500:$0.9687
  • 100:$1.2491
  • 10:$1.5810
  • 1:$1.7800
SI4686DY-T1-GE3
DISTI # SI4686DY-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 30V 18.2A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2500In Stock
  • 1000:$0.7648
  • 500:$0.9687
  • 100:$1.2491
  • 10:$1.5810
  • 1:$1.7800
SI4686DY-T1-GE3
DISTI # SI4686DY-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R (Alt: SI4686DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 0
  • 2500:€0.5219
  • 5000:€0.3559
  • 10000:€0.3059
  • 15000:€0.2829
  • 25000:€0.2629
SI4686DY-T1-GE3
DISTI # SI4686DY-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4686DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.6189
  • 5000:$0.6009
  • 10000:$0.5759
  • 15000:$0.5599
  • 25000:$0.5449
SI4686DY-T1-GE3
DISTI # 15R5074
Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 18.2A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:18.2A,Drain Source Voltage Vds:30V,On Resistance Rds(on):14mohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes0
  • 1:$0.6170
  • 2500:$0.6120
  • 5000:$0.5940
  • 10000:$0.5720
SI4686DY-T1-GE3
DISTI # 26R1888
Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 18.2A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:18.2A,Drain Source Voltage Vds:30V,On Resistance Rds(on):14mohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes0
  • 1:$1.4900
  • 10:$1.2300
  • 25:$1.1300
  • 50:$1.0400
  • 100:$0.9410
  • 250:$0.8750
  • 500:$0.8090
SI4686DY-T1-GE3
DISTI # 781-SI4686DY-T1-GE3
Vishay IntertechnologiesMOSFET 30V 18.2A 5.2W 9.5mohm @ 10V
RoHS: Compliant
2486
  • 1:$1.4900
  • 10:$1.2300
  • 100:$0.9410
  • 500:$0.8090
  • 1000:$0.6390
  • 2500:$0.5960
  • 5000:$0.5670
  • 10000:$0.5530
Imagen Parte # Descripción
SI4686DY-T1-E3

Mfr.#: SI4686DY-T1-E3

OMO.#: OMO-SI4686DY-T1-E3

MOSFET 30V 18.2A 5.2W 9.5mohm @ 10V
SI4686DY-T1-GE3

Mfr.#: SI4686DY-T1-GE3

OMO.#: OMO-SI4686DY-T1-GE3

MOSFET 30V 18.2A 5.2W 9.5mohm @ 10V
SI4686DY

Mfr.#: SI4686DY

OMO.#: OMO-SI4686DY-1190

Nuevo y original
SI4686DY-T1

Mfr.#: SI4686DY-T1

OMO.#: OMO-SI4686DY-T1-1190

Nuevo y original
SI4686DY-T1-E3

Mfr.#: SI4686DY-T1-E3

OMO.#: OMO-SI4686DY-T1-E3-VISHAY

MOSFET N-CH 30V 18.2A 8-SOIC
SI4686DY-T1-GE3

Mfr.#: SI4686DY-T1-GE3

OMO.#: OMO-SI4686DY-T1-GE3-VISHAY

MOSFET N-CH 30V 18.2A 8-SOIC
SI4686DY-TI-E3

Mfr.#: SI4686DY-TI-E3

OMO.#: OMO-SI4686DY-TI-E3-1190

Nuevo y original
Disponibilidad
Valores:
Available
En orden:
2000
Ingrese la cantidad:
El precio actual de SI4686DY-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,45 US$
0,45 US$
10
0,43 US$
4,26 US$
100
0,40 US$
40,33 US$
500
0,38 US$
190,45 US$
1000
0,36 US$
358,50 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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