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IRF9Z34NSTRLPBF

IRF9Z34NSTRLPBF
Mfr. #:
IRF9Z34NSTRLPBF
Fabricante:
Infineon Technologies
Descripción:
MOSFET MOSFT PCh -55V 19A 100mOhm 23.3nC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF9Z34NSTRLPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
D2PAK-3
Número de canales:
1 Channel
Polaridad del transistor:
P-Channel
Vds - Voltaje de ruptura de drenaje-fuente:
55 V
Id - Corriente de drenaje continua:
19 A
Rds On - Resistencia de la fuente de drenaje:
100 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
23.3 nC
Pd - Disipación de energía:
68 W
Configuración:
Único
Embalaje:
Carrete
Altura:
2.3 mm
Longitud:
6.5 mm
Tipo de transistor:
1 P-Channel
Ancho:
6.22 mm
Marca:
Infineon Technologies
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
800
Subcategoría:
MOSFET
Parte # Alias:
SP001554544
Unidad de peso:
0.139332 oz
Tags
IRF9Z34NST, IRF9Z34NS, IRF9Z34N, IRF9Z34, IRF9Z3, IRF9Z, IRF9, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET; Power; P-Ch; VDSS -55V; RDS(ON) 0.1Ohm; ID -19A; D2Pak; PD 68W; VGS +/-20V; -55C
***ure Electronics
Single P-Channel 55 V 0.1 Ohm 35nC HEXFET® Power Mosfet - D2PAK
***Components
P-Channel MOSFET, 19 A, 55 V, 3-Pin D2PAK Infineon IRF9Z34NSPBF
***essParts.Net
INTERNATIONAL RECTIFIER IRF9Z34NSTRLPBF / MOSFET P-CH 55V 19A D2PAK
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: P Power dissipation: 68 W
***ical
Trans MOSFET P-CH Si 55V 19A 3-Pin(2+Tab) D2PAK Tube
***ernational Rectifier
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
***p One Stop Japan
Trans MOSFET P-CH 55V 19A 3-Pin(2+Tab) D2PAK
***et Europe
MOSFET P-CH 55V 19A D2PAK
***ark
Planar_Mosfets Rohs Compliant: Yes
***eco
55V 17.000A D2PAK <AZ
***ukat
P-Ch 55V 19A 68W 0,10R D²Pak
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***ronik
MOSFET P-CHANNEL
***rt123
D2-PAK (TO-263)
***ment14 APAC
Prices include import duty and tax. P CHANNEL MOSFET, -55V, 19A, D2-PAK; Tra; P CHANNEL MOSFET, -55V, 19A, D2-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:-19A; Drain Source Voltage Vds:-55V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V
***nell
MOSFET, P, D2-PAK; Polarità Transistor:Canale P; Corrente Continua di Drain Id:19A; Tensione Drain Source Vds:-55V; Resistenza di Attivazione Rds(on):0.1ohm; Tensione Vgs di Misura Rds(on):-10V; Tensione di Soglia Vgs:-4V; Dissipazione di Potenza Pd:68W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Id Max:-19A; Corrente di Impulso Idm:72A; Dissipazione di Potenza su PCB 1"Sq.:3.8W; Intervallo Temperatura di Esercizio:Da -55°C a +175°C; Livello Temperatura a Piena Potenza:25°C; Marcatura SMD:IRF9Z24NS; Modello Case Alternativo:D2-PAK; Temperatura di Corrente:25°C; Temperatura di Esercizio Min:-55°C; Tensione Vds Tipica:55V; Tensione Vgs Max:-4V; Tensione Vgs di Misurazione Rds on:10V
Parte # Mfg. Descripción Valores Precio
IRF9Z34NSTRLPBF
DISTI # V72:2272_13889939		Infineon Technologies AGTrans MOSFET P-CH Si 55V 19A 3-Pin(2+Tab) D2PAK T/R648
  • 500:$0.5998
  • 250:$0.6625
  • 100:$0.6643
  • 25:$0.8118
  • 10:$0.8149
  • 1:$0.9172
IRF9Z34NSTRLPBF
DISTI # IRF9Z34NSTRLPBFCT-ND		Infineon Technologies AGMOSFET P-CH 55V 19A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		11394In Stock
  • 100:$0.9890
  • 10:$1.2510
  • 1:$1.4100
IRF9Z34NSTRLPBF
DISTI # IRF9Z34NSTRLPBFDKR-ND		Infineon Technologies AGMOSFET P-CH 55V 19A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		11394In Stock
  • 100:$0.9890
  • 10:$1.2510
  • 1:$1.4100
IRF9Z34NSTRLPBF
DISTI # IRF9Z34NSTRLPBFTR-ND		Infineon Technologies AGMOSFET P-CH 55V 19A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		10400In Stock
  • 800:$0.6506
IRF9Z34NSTRLPBF
DISTI # 30309704		Infineon Technologies AGTrans MOSFET P-CH Si 55V 19A 3-Pin(2+Tab) D2PAK T/R800
  • 800:$0.3635
IRF9Z34NSTRLPBF
DISTI # 30150641		Infineon Technologies AGTrans MOSFET P-CH Si 55V 19A 3-Pin(2+Tab) D2PAK T/R648
  • 500:$0.5998
  • 250:$0.6625
  • 100:$0.6643
  • 25:$0.8118
  • 16:$0.8149
IRF9Z34NSTRLPBF
DISTI # 13AC9219		Infineon Technologies AGMOSFET, P-CH, -55V, -19A, TO-263,Transistor Polarity:P Channel,Continuous Drain Current Id:-19A,Drain Source Voltage Vds:-55V,On Resistance Rds(on):0.1ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-4V,Power RoHS Compliant: Yes1565
  • 1:$1.1700
  • 10:$0.9980
  • 25:$0.9210
  • 50:$0.8440
  • 100:$0.7670
  • 250:$0.7220
  • 500:$0.6770
IRF9Z34NSTRLPBF
DISTI # 70019669		Infineon Technologies AGMOSFET,P-CHANNEL,-55V,19A,100 MOHM,23.3 NC QG,D2-PAK
RoHS: Compliant		0
  • 1:$1.6900
  • 2:$1.6560
  • 5:$1.6060
  • 10:$1.5380
  • 25:$1.4370
IRF9Z34NSTRLPBF
DISTI # 942-IRF9Z34NSTRLPBF		Infineon Technologies AGMOSFET MOSFT PCh -55V 19A 100mOhm 23.3nC
RoHS: Compliant		1504
  • 1:$1.1700
  • 10:$0.9980
  • 100:$0.7670
  • 500:$0.6770
IRF9Z34NSTRLPBFInternational Rectifier19 A, 55 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET3
  • 1:$1.2000
IRF9Z34NSTRLPBF
DISTI # IRF9Z34NSTRLPBF		Infineon Technologies AGTransistor: P-MOSFET,unipolar,-55V,-19A,3.8W,D2PAK402
  • 1:$0.6640
  • 3:$0.5714
  • 10:$0.4592
  • 100:$0.3990
IRF9Z34NSTRLPBF
DISTI # TMOSP12094		Infineon Technologies AGP-CH 55V 19A 100mOhm D2PAK
RoHS: Compliant		Stock DE - 800Stock US - 0
  • 800:$0.4990
  • 1600:$0.4699
  • 3200:$0.4415
  • 4800:$0.3987
  • 9600:$0.3850
IRF9Z34NSTRLPBF
DISTI # IRF9Z34NSPBF-GURT		Infineon Technologies AGP-Ch 55V 19A 68W 0,1R DPak
RoHS: Compliant		840
  • 10:€0.6085
  • 50:€0.3685
  • 200:€0.3085
  • 500:€0.2970
IRF9Z34NSTRLPBF
DISTI # 2725932		Infineon Technologies AGMOSFET, P-CH, -55V, -19A, TO-263
RoHS: Compliant		1570
  • 1:$1.8500
  • 10:$1.5800
  • 100:$1.2200
IRF9Z34NSTRLPBF
DISTI # 2725932		Infineon Technologies AGMOSFET, P-CH, -55V, -19A, TO-263
RoHS: Compliant		1580
  • 5:£0.8570
  • 25:£0.7700
  • 100:£0.5920
  • 250:£0.5570
  • 500:£0.5220
IRF9Z34NSTRLPBF
DISTI # C1S322000488128		Infineon Technologies AGTrans MOSFET P-CH Si 55V 19A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		648
  • 250:$0.6625
  • 100:$0.6643
  • 25:$0.8118
  • 10:$0.8149
IRF9Z34NSTRLPBF
DISTI # C1S322000488119		Infineon Technologies AGTrans MOSFET P-CH Si 55V 19A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		800
  • 800:$0.5570
IRF9Z34NSTRLPBF
DISTI # XSLY00000000898		INFINEON/IRD2-PAK (TO-263)
RoHS: Compliant		1152
  • 1600:$0.5657
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Disponibilidad
Valores:
Available
En orden:
1986
Ingrese la cantidad:
El precio actual de IRF9Z34NSTRLPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,16 US$
1,16 US$
10
1,00 US$
9,98 US$
100
0,77 US$
76,70 US$
500
0,68 US$
338,50 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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