SI7308DN-T1-GE3

SI7308DN-T1-GE3
Mfr. #:
SI7308DN-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET N-CH 60V 6A 1212-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI7308DN-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Vishay Siliconix
categoria de producto
FET - Single
Serie
TrincheraFETR
embalaje
Embalaje alternativo de Digi-ReelR
Alias ​​de parte
SI7308DN-GE3
Estilo de montaje
SMD / SMT
Paquete-Estuche
PowerPAKR 1212-8
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
1 Channel
Paquete de dispositivo de proveedor
PowerPAKR 1212-8
Configuración
Único
Tipo FET
Canal N MOSFET, óxido metálico
Potencia máxima
19.8W
Tipo transistor
1 N-Channel
Drenaje-a-fuente-voltaje-Vdss
60V
Entrada-Capacitancia-Ciss-Vds
665pF @ 15V
Función FET
Estándar
Corriente-Continuo-Drenaje-Id-25 ° C
6A (Tc)
Rds-On-Max-Id-Vgs
58 mOhm @ 5.4A, 10V
Vgs-th-Max-Id
3V @ 250μA
Puerta-Carga-Qg-Vgs
20nC @ 10V
Disipación de potencia Pd
3.2 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
10 ns
Hora de levantarse
65 ns 15 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
5.4 A
Vds-Drain-Source-Breakdown-Voltage
60 V
Resistencia a la fuente de desagüe de Rds
58 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
15 ns 20 ns
Tiempo de retardo de encendido típico
15 ns 10 ns
Modo de canal
Mejora
Tags
SI7308DN-T, SI7308, SI730, SI73, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Si7308DN Series N-Channel 60 V 58 mOhms SMT Power Mosfet - PowerPAK 1212-8
***ical
Trans MOSFET N-CH 60V 5.4A 8-Pin PowerPAK 1212 T/R
***nell
N CHANNEL MOSFET, 60V, 6A, POWERPAK
***ment14 APAC
N CHANNEL MOSFET, 60V, 6A, POWERPAK; Tra; N CHANNEL MOSFET, 60V, 6A, POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:60V; On Resistance Rds(on):72mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:3V
Parte # Mfg. Descripción Valores Precio
SI7308DN-T1-GE3
DISTI # V72:2272_09216327
Vishay IntertechnologiesTrans MOSFET N-CH 60V 5.4A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant
5667
  • 3000:$0.4379
  • 1000:$0.4992
  • 500:$0.6203
  • 250:$0.7107
  • 100:$0.7116
  • 25:$0.8999
  • 10:$0.9018
  • 1:$1.0684
SI7308DN-T1-GE3
DISTI # V36:1790_09216327
Vishay IntertechnologiesTrans MOSFET N-CH 60V 5.4A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant
0
    SI7308DN-T1-GE3
    DISTI # SI7308DN-T1-GE3CT-ND
    Vishay SiliconixMOSFET N-CH 60V 6A 1212-8
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    3686In Stock
    • 1000:$0.6129
    • 500:$0.7669
    • 100:$0.9788
    • 10:$1.2290
    • 1:$1.3900
    SI7308DN-T1-GE3
    DISTI # SI7308DN-T1-GE3DKR-ND
    Vishay SiliconixMOSFET N-CH 60V 6A 1212-8
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    3686In Stock
    • 1000:$0.6129
    • 500:$0.7669
    • 100:$0.9788
    • 10:$1.2290
    • 1:$1.3900
    SI7308DN-T1-GE3
    DISTI # SI7308DN-T1-GE3TR-ND
    Vishay SiliconixMOSFET N-CH 60V 6A 1212-8
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)
    3000In Stock
    • 3000:$0.5576
    SI7308DN-T1-GE3
    DISTI # 27478980
    Vishay IntertechnologiesTrans MOSFET N-CH 60V 5.4A 8-Pin PowerPAK 1212 T/R
    RoHS: Compliant
    5667
    • 3000:$0.4707
    • 1000:$0.5366
    • 500:$0.6668
    • 250:$0.7640
    • 100:$0.7650
    • 25:$0.9674
    • 14:$0.9694
    SI7308DN-T1-GE3
    DISTI # 29708274
    Vishay IntertechnologiesTrans MOSFET N-CH 60V 5.4A 8-Pin PowerPAK 1212 T/R
    RoHS: Compliant
    3000
    • 3000:$0.5353
    SI7308DN-T1-GE3
    DISTI # SI7308DN-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 60V 5.4A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7308DN-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
    • 3000:$0.4949
    • 6000:$0.4802
    • 12000:$0.4607
    • 18000:$0.4480
    • 30000:$0.4359
    SI7308DN-T1-GE3
    DISTI # SI7308DN-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 60V 5.4A 8-Pin PowerPAK 1212 T/R (Alt: SI7308DN-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel
    Europe - 0
    • 3000:€1.0779
    • 6000:€0.7729
    • 12000:€0.6269
    • 18000:€0.5539
    • 30000:€0.5299
    SI7308DN-T1-GE3
    DISTI # 33P5390
    Vishay IntertechnologiesN CHANNEL MOSFET, 60V, 6A, POWERPAK,Continuous Drain Current Id:6A,Drain Source Voltage Vds:60V,Filter Terminals:Surface Mount,No. of Pins:8,On Resistance Rds(on):72mohm,Operating Temperature Range:-55°C to +150°C RoHS Compliant: Yes0
    • 10000:$0.4320
    • 6000:$0.4420
    • 4000:$0.4590
    • 2000:$0.5100
    • 1000:$0.5610
    • 1:$0.5850
    SI7308DN-T1-GE3
    DISTI # 26R1916
    Vishay IntertechnologiesN CHANNEL MOSFET, 60V, 6A, POWERPAK,Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.072ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
    • 1000:$0.5100
    • 500:$0.6470
    • 250:$0.7000
    • 100:$0.7520
    • 50:$0.8660
    • 25:$0.9800
    • 1:$1.1900
    SI7308DN-T1-GE3
    DISTI # 781-SI7308DN-T1-GE3
    Vishay IntertechnologiesMOSFET 60V Vds 20V Vgs PowerPAK 1212-8
    RoHS: Compliant
    5928
    • 1:$1.1900
    • 10:$0.9800
    • 100:$0.7520
    • 500:$0.6470
    • 1000:$0.5100
    SI7308DNT1GE3Vishay IntertechnologiesPower Field-Effect Transistor, 5.4A I(D), 60V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant
    Europe - 3000
      SI7308DN-T1-GE3  371
        SI7308DN-T1-GE3Vishay IntertechnologiesMOSFET 60V Vds 20V Vgs PowerPAK 1212-8Americas -
          SI7308DN-T1-GE3
          DISTI # 1871374
          Vishay IntertechnologiesN CHANNEL MOSFET, 60V, 6A, POWERPAK
          RoHS: Compliant
          0
          • 3000:$0.7540
          • 1000:$0.7690
          • 500:$0.9750
          • 100:$1.1300
          • 10:$1.4800
          • 1:$1.7900
          Imagen Parte # Descripción
          SI7308DN-T1-GE3

          Mfr.#: SI7308DN-T1-GE3

          OMO.#: OMO-SI7308DN-T1-GE3

          MOSFET 60V Vds 20V Vgs PowerPAK 1212-8
          SI7308DN-T1-E3

          Mfr.#: SI7308DN-T1-E3

          OMO.#: OMO-SI7308DN-T1-E3

          MOSFET 60V Vds 20V Vgs PowerPAK 1212-8
          SI7308DN

          Mfr.#: SI7308DN

          OMO.#: OMO-SI7308DN-1190

          Nuevo y original
          SI7308DN-T1-E3

          Mfr.#: SI7308DN-T1-E3

          OMO.#: OMO-SI7308DN-T1-E3-VISHAY

          MOSFET N-CH 60V 6A 1212-8
          SI7308DN-T1-E3-PBF

          Mfr.#: SI7308DN-T1-E3-PBF

          OMO.#: OMO-SI7308DN-T1-E3-PBF-1190

          Nuevo y original
          SI7308DN-T1-GE3

          Mfr.#: SI7308DN-T1-GE3

          OMO.#: OMO-SI7308DN-T1-GE3-VISHAY

          MOSFET N-CH 60V 6A 1212-8
          SI7308DNT1GE3

          Mfr.#: SI7308DNT1GE3

          OMO.#: OMO-SI7308DNT1GE3-1190

          Power Field-Effect Transistor, 5.4A I(D), 60V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
          Disponibilidad
          Valores:
          Available
          En orden:
          3500
          Ingrese la cantidad:
          El precio actual de SI7308DN-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
          Precio de referencia (USD)
          Cantidad
          Precio unitario
          Ext. Precio
          1
          0,65 US$
          0,65 US$
          10
          0,62 US$
          6,16 US$
          100
          0,58 US$
          58,32 US$
          500
          0,55 US$
          275,40 US$
          1000
          0,52 US$
          518,40 US$
          Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
          Empezar con
          Top