SI7434DP-T1-GE3

SI7434DP-T1-GE3
Mfr. #:
SI7434DP-T1-GE3
Fabricante:
Vishay
Descripción:
IGBT Transistors MOSFET 250V 3.8A 5.2W 155mohm @ 10V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI7434DP-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Vishay Siliconix
categoria de producto
FET - Single
Serie
TrincheraFETR
embalaje
Embalaje alternativo de Digi-ReelR
Alias ​​de parte
SI7434DP-GE3
Unidad de peso
0.017870 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
PowerPAKR SO-8
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
1 Channel
Paquete de dispositivo de proveedor
PowerPAKR SO-8
Configuración
Único
Tipo FET
Canal N MOSFET, óxido metálico
Potencia máxima
1.9W
Tipo transistor
1 N-Channel
Drenaje-a-fuente-voltaje-Vdss
250V
Entrada-Capacitancia-Ciss-Vds
-
Función FET
Estándar
Corriente-Continuo-Drenaje-Id-25 ° C
2.3A (Ta)
Rds-On-Max-Id-Vgs
155 mOhm @ 3.8A, 10V
Vgs-th-Max-Id
4V @ 250μA
Puerta-Carga-Qg-Vgs
50nC @ 10V
Disipación de potencia Pd
1.9 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
23 ns
Hora de levantarse
23 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
2.3 A
Vds-Drain-Source-Breakdown-Voltage
250 V
Resistencia a la fuente de desagüe de Rds
155 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
47 ns
Tiempo de retardo de encendido típico
16 ns
Modo de canal
Mejora
Tags
SI7434, SI743, SI74, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Trans MOSFET N-CH 250V 2.3A 8-Pin PowerPAK SO T/R
***ark
COMPLEMENTARY MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:250V; Continuous Drain Current, Id:3.8A; On Resistance, Rds(on):0.162ohm; Rds(on) Test Voltage, Vgs:6V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET,N CH,DIODE,250V,3.8A,SO8 PPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3.8A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.129ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:3.8A; Power Dissipation Pd:5.2W; Voltage Vgs Max:20V
Parte # Mfg. Descripción Valores Precio
SI7434DP-T1-GE3
DISTI # V72:2272_09216354
Vishay IntertechnologiesTrans MOSFET N-CH 250V 2.3A 8-Pin PowerPAK SO T/R
RoHS: Compliant
3099
  • 3000:$1.4910
  • 1000:$1.5220
  • 500:$1.6900
  • 250:$1.8150
  • 100:$1.9320
  • 25:$2.1629
  • 10:$2.1750
  • 1:$2.4129
SI7434DP-T1-GE3
DISTI # SI7434DP-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 250V 2.3A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
7731In Stock
  • 1000:$1.5296
  • 500:$1.8461
  • 100:$2.3736
  • 10:$2.9540
  • 1:$3.2700
SI7434DP-T1-GE3
DISTI # SI7434DP-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 250V 2.3A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
7731In Stock
  • 1000:$1.5296
  • 500:$1.8461
  • 100:$2.3736
  • 10:$2.9540
  • 1:$3.2700
SI7434DP-T1-GE3
DISTI # SI7434DP-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 250V 2.3A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
6000In Stock
  • 3000:$1.3827
SI7434DP-T1-GE3
DISTI # 25790042
Vishay IntertechnologiesTrans MOSFET N-CH 250V 2.3A 8-Pin PowerPAK SO T/R
RoHS: Compliant
3099
  • 3000:$1.4900
  • 1000:$1.5209
  • 500:$1.6870
  • 250:$1.8120
  • 100:$1.9270
  • 25:$2.1570
  • 10:$2.1680
  • 5:$2.4040
SI7434DP-T1-GE3
DISTI # SI7434DP-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 250V 2.3A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7434DP-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$1.2900
  • 6000:$1.2900
  • 12000:$1.2900
  • 18000:$1.2900
  • 30000:$1.2900
SI7434DP-T1-GE3
DISTI # 26R1922
Vishay IntertechnologiesTrans MOSFET N-CH 250V 2.3A 8-Pin PowerPAK SO T/R - Product that comes on tape, but is not reeled (Alt: 26R1922)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack
Americas - 0
  • 1:$1.7900
SI7434DP-T1-GE3
DISTI # 15R5190
Vishay IntertechnologiesN CHANNEL MOSFET, 250V, 3.8A, SOIC,Continuous Drain Current Id:3.8A,Drain Source Voltage Vds:250V,No. of Pins:8,On Resistance Rds(on):162mohm,Operating Temperature Range:-55°C to +150°C,Package / Case:8-SOIC RoHS Compliant: Yes0
  • 1:$1.9500
  • 2000:$1.8600
  • 4000:$1.7400
  • 8000:$1.6200
  • 12000:$1.5500
  • 20000:$1.5300
SI7434DP-T1-GE3
DISTI # 26R1922
Vishay IntertechnologiesN CHANNEL MOSFET, 250V, 3.8A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:3.8A,Drain Source Voltage Vds:250V,On Resistance Rds(on):0.129ohm,Rds(on) Test Voltage Vgs:6V,Threshold Voltage Vgs:4V RoHS Compliant: Yes20
  • 1:$3.5800
  • 25:$2.9600
  • 50:$2.7100
  • 100:$2.4500
  • 250:$2.3600
  • 500:$2.1200
  • 1000:$1.7900
SI7434DP-T1-GE3
DISTI # 781-SI7434DP-T1-GE3
Vishay IntertechnologiesMOSFET 250V Vds 20V Vgs PowerPAK SO-8
RoHS: Compliant
1700
  • 1:$2.9800
  • 10:$2.4700
  • 100:$2.0400
  • 250:$1.9700
  • 500:$1.7700
  • 1000:$1.4900
  • 3000:$1.4200
SI7434DPT1GE3Vishay IntertechnologiesPower Field-Effect Transistor, 2.3A I(D), 250V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
Europe - 3000
    SI7434DP-T1-GE3Vishay Intertechnologies 2333
      SI7434DP-T1-GE3Vishay Intertechnologies 273
        SI7434DP-T1-GE3
        DISTI # C1S803604026283
        Vishay IntertechnologiesTrans MOSFET N-CH 250V 2.3A 8-Pin PowerPAK SO T/R
        RoHS: Compliant
        3099
        • 250:$1.8120
        • 100:$1.9270
        • 25:$2.1570
        • 10:$2.1680
        • 1:$2.4040
        SI7434DP-T1-GE3
        DISTI # 2132253
        Vishay IntertechnologiesN CHANNEL MOSFET, 250V, 3.8A, SOIC
        RoHS: Compliant
        20
        • 1:£3.1500
        • 25:£2.6000
        • 50:£2.3900
        • 100:£2.1500
        • 250:£2.0700
        SI7434DP-T1-GE3Vishay IntertechnologiesMOSFET 250V Vds 20V Vgs PowerPAK SO-8Americas -
          SI7434DP-T1-GE3
          DISTI # 2132253
          Vishay IntertechnologiesN CHANNEL MOSFET, 250V, 3.8A, SOIC
          RoHS: Compliant
          20
          • 3000:$4.2400
          • 6000:$3.7000
          Imagen Parte # Descripción
          SI7434DP-T1-E3

          Mfr.#: SI7434DP-T1-E3

          OMO.#: OMO-SI7434DP-T1-E3

          MOSFET 250V Vds 20V Vgs PowerPAK SO-8
          SI7434DP-T1-GE3

          Mfr.#: SI7434DP-T1-GE3

          OMO.#: OMO-SI7434DP-T1-GE3

          MOSFET 250V Vds 20V Vgs PowerPAK SO-8
          SI7434DP-T1-GE3

          Mfr.#: SI7434DP-T1-GE3

          OMO.#: OMO-SI7434DP-T1-GE3-VISHAY

          IGBT Transistors MOSFET 250V 3.8A 5.2W 155mohm @ 10V
          SI7434DP-T1-E3

          Mfr.#: SI7434DP-T1-E3

          OMO.#: OMO-SI7434DP-T1-E3-VISHAY

          MOSFET N-CH 250V 2.3A PPAK SO-8
          Disponibilidad
          Valores:
          Available
          En orden:
          1000
          Ingrese la cantidad:
          El precio actual de SI7434DP-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
          Precio de referencia (USD)
          Cantidad
          Precio unitario
          Ext. Precio
          1
          1,94 US$
          1,94 US$
          10
          1,84 US$
          18,38 US$
          100
          1,74 US$
          174,15 US$
          500
          1,64 US$
          822,40 US$
          1000
          1,55 US$
          1 548,00 US$
          Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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