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IRFHM8235TRPBF

IRFHM8235TRPBF
Mfr. #:
IRFHM8235TRPBF
Fabricante:
Infineon Technologies
Descripción:
MOSFET 25V 7.3nC SGL N-CH HEXFET Pwr MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRFHM8235TRPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IRFHM8235TRPBF más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PQFN-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
25 V
Id - Corriente de drenaje continua:
16 A
Rds On - Resistencia de la fuente de drenaje:
10.3 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1.8 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
7.7 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
3 W
Configuración:
Único
Nombre comercial:
SmallPowIR
Embalaje:
Carrete
Altura:
0.9 mm
Longitud:
3.3 mm
Serie:
IRFHM8235
Tipo de transistor:
1 N-Channel
Ancho:
3.3 mm
Marca:
Infineon Technologies
Transconductancia directa - Mín .:
43 S
Otoño:
5.2 ns
Tipo de producto:
MOSFET
Hora de levantarse:
16 ns
Cantidad de paquete de fábrica:
4000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
7.5 ns
Tiempo típico de retardo de encendido:
7.9 ns
Parte # Alias:
SP001556558
Tags
IRFHM82, IRFHM8, IRFHM, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
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***ineon SCT
25V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PQFN 3.3X3.3 8L, RoHS
***ark
TAPE AND REEL / MOSFET, 25V,A, 7.4mOhm, 7.3nC, PQFN3.3x3.3 single
***p One Stop
Trans MOSFET N-CH 25V 16A 8-Pin QFN EP T/R
***ineon
Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 4.1C/W); Low Profile (less than 1.05 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; MultiPhase ControlFET; Point of Load ControlFET
***ure Electronics
Single N-Channel 25 V 5.2 mOhm 18 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
***ineon SCT
25V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PQFN 3.3X3.3 8L, RoHS
***ark
TAPE AND REEL / MOSFET, 25V,A, 5mOhm, 12nC, PQFN3.3x3.3 single
***p One Stop
Trans MOSFET N-CH 25V 19A 8-Pin QFN EP T/R
***ineon
Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 3.4C/W); Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; MultiPhase ControlFET; Point of Load ControlFET
***ark
MOSFET, N-CH, 30V, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Curren
***emi
N-Channel Power Trench® MOSFET 30V, 26A, 5.5mΩ
***r Electronics
Power Field-Effect Transistor, 17.5A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
***nell
MOSFET, N-CH, 30V, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:41W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
***ure Electronics
Single N-Channel 30 V 9 mOhm 15 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PQFN 3.3X3.3 8L, RoHS
***p One Stop
Trans MOSFET N-CH 30V 13A 8-Pin PQFN EP T/R
***ment14 APAC
MOSFET, N CHANNEL, 25V, 30A, PQFN-8; TRA; MOSFET, N CHANNEL, 25V, 30A, PQFN-8; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0072ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V
***ineon
Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 4.5C/W); Low Profile (less than 1.2 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
***ure Electronics
Single N-Channel 30 V 6.6 mOhm 20 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PQFN 3.3X3.3 8L, RoHS
***ical
Trans MOSFET N-CH 30V 16A 8-Pin PQFN EP T/R
***ineon
Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 3.8C/W); Low Profile (less than 1.2 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
***hard Electronics
FAIRCHILD SEMICONDUCTOR FDMC7672S MOSFET Transistor, N Channel, 18 A, 30 V, 0.005 ohm, 10 V, 1.6 V
***nell
MOSFET, N CH, 30V, 18A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.005ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:36W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
This FDMC7672S is produced using Fairchild Semiconductor's advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery packs.
***ure Electronics
N-Channel 30 V 7 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
***emi
N-Channel PowerTrench® MOSFET 30V, 15A, 7.0mΩ
***Yang
Trans MOSFET N-CH 30V 15A 8-Pin SOIC N T/R - Tape and Reel
***ment14 APAC
N CHANNEL MOSFET, 30V, 15A, SOIC; Transi; N CHANNEL MOSFET, 30V, 15A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V
***rchild Semiconductor
This N–Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on–state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Small PowIR MOSFETs
Infineon Small PowIR MOSFETs combine high performance silicon technology with small and innovative packaging to offer designers more flexibility when it comes to making a MOSFET selection. The IRLML6244TRPBF provides 21 mO max @ 4.5Vgs RDS(on). The new 2x2 PQFN package offers some of the smallest dual configurations possible (dual N or dual P) while providing 19°C/W optimal thermal performance. Infineon Small PowIR MOSFETs are available in SO-8, TSOP-6 and PQFN 3x3 packages allowing designers to maximize board space, save on part count and improve system efficiency.Learn More
Parte # Mfg. Descripción Valores Precio
IRFHM8235TRPBF
DISTI # V72:2272_13891072		Infineon Technologies AGTrans MOSFET N-CH 25V 16A 8-Pin PQFN EP T/R
RoHS: Compliant		1575
  • 1000:$0.2436
  • 500:$0.3063
  • 250:$0.3071
  • 100:$0.3079
  • 25:$0.4235
  • 10:$0.4306
  • 1:$0.4954
IRFHM8235TRPBF
DISTI # IRFHM8235TRPBFCT-ND		Infineon Technologies AGMOSFET N-CH 25V 16A 8PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3991In Stock
  • 1000:$0.3515
  • 500:$0.4308
  • 100:$0.5695
  • 10:$0.7280
  • 1:$0.8200
IRFHM8235TRPBF
DISTI # IRFHM8235TRPBFDKR-ND		Infineon Technologies AGMOSFET N-CH 25V 16A 8PQFN
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3991In Stock
  • 1000:$0.3515
  • 500:$0.4308
  • 100:$0.5695
  • 10:$0.7280
  • 1:$0.8200
IRFHM8235TRPBF
DISTI # IRFHM8235TRPBFTR-ND		Infineon Technologies AGMOSFET N-CH 25V 16A 8PQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 4000:$0.3124
IRFHM8235TRPBF
DISTI # 26196360		Infineon Technologies AGTrans MOSFET N-CH 25V 16A 8-Pin PQFN EP T/R
RoHS: Compliant		1575
  • 1000:$0.2436
  • 500:$0.3063
  • 250:$0.3071
  • 100:$0.3079
  • 33:$0.4235
IRFHM8235TRPBF
DISTI # IRFHM8235TRPBF		Infineon Technologies AGTrans MOSFET N-CH 25V 16A 8-Pin PQFN T/R - Tape and Reel (Alt: IRFHM8235TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 4000:$0.2009
  • 8000:$0.1939
  • 16000:$0.1869
  • 24000:$0.1809
  • 40000:$0.1769
IRFHM8235TRPBF
DISTI # 942-IRFHM8235TRPBF		Infineon Technologies AGMOSFET 25V 7.3nC SGL N-CH HEXFET Pwr MOSFET
RoHS: Compliant		2953
  • 1:$0.6600
  • 10:$0.5430
  • 100:$0.3500
  • 1000:$0.2800
  • 4000:$0.2370
  • 8000:$0.2280
  • 24000:$0.2190
IRFHM8235TRPBFInternational Rectifier 
RoHS: Compliant		Europe - 4000
    IRFHM8235TRPBF
    DISTI # C1S322000490798    		Infineon Technologies AGTrans MOSFET N-CH 25V 16A 8-Pin PQFN EP T/R
    RoHS: Compliant    		1575
    • 250:$0.3071
    • 100:$0.3079
    • 10:$0.4306
    Imagen Parte # Descripción
    PCA9306DCTR

    Mfr.#: PCA9306DCTR

    OMO.#: OMO-PCA9306DCTR

    		 Translation - Voltage Levels Dual BiDir I2C-Bus & SMBus Vltg Lvl-Trans
    MIC5203-5.0YM5-TR

    Mfr.#: MIC5203-5.0YM5-TR

    OMO.#: OMO-MIC5203-5-0YM5-TR

    		 LDO Voltage Regulators 80mA, 3% uCapLDO Regulator
    RC0603JR-071KL

    Mfr.#: RC0603JR-071KL

    OMO.#: OMO-RC0603JR-071KL

    		 Thick Film Resistors - SMD 1K OHM 5%
    RC0402FR-0710KL

    Mfr.#: RC0402FR-0710KL

    OMO.#: OMO-RC0402FR-0710KL

    		 Thick Film Resistors - SMD 10K OHM 1%
    RC0402JR-074K7L

    Mfr.#: RC0402JR-074K7L

    OMO.#: OMO-RC0402JR-074K7L

    		 Thick Film Resistors - SMD 4.7K OHM 5%
    RT0402BRD0710KL

    Mfr.#: RT0402BRD0710KL

    OMO.#: OMO-RT0402BRD0710KL

    		 Thin Film Resistors - SMD 10K ohm 0.1% 1/16W
    MIC5203-5.0YM5-TR

    Mfr.#: MIC5203-5.0YM5-TR

    OMO.#: OMO-MIC5203-5-0YM5-TR-MICROCHIP-TECHNOLOGY

    		 LDO Voltage Regulators
    RT0402BRD0710KL

    Mfr.#: RT0402BRD0710KL

    OMO.#: OMO-RT0402BRD0710KL-YAGEO

    		 Thin Film Resistors - SMD 10K ohm 0.1% 1/16W
    PCA9306DCTR

    Mfr.#: PCA9306DCTR

    OMO.#: OMO-PCA9306DCTR-TEXAS-INSTRUMENTS

    		 Translation - Voltage Levels Dual BiDir I2C-Bus & SMBus Vltg Lvl-Trans
    RC0402JR-074K7L

    Mfr.#: RC0402JR-074K7L

    OMO.#: OMO-RC0402JR-074K7L-YAGEO

    		 Thick Film Resistors - SMD 4.7K OHM 5%
    Disponibilidad
    Valores:
    Available
    En orden:
    1987
    Ingrese la cantidad:
    El precio actual de IRFHM8235TRPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,65 US$
    0,65 US$
    10
    0,54 US$
    5,43 US$
    100
    0,35 US$
    35,00 US$
    1000
    0,28 US$
    280,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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