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IPW60R040C7XKSA1

IPW60R040C7XKSA1
Mfr. #:
IPW60R040C7XKSA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET HIGH POWER_NEW
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPW60R040C7XKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPW60R040C7XKSA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
50 A
Rds On - Resistencia de la fuente de drenaje:
34 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
107 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
227 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
CoolMOS
Embalaje:
Tubo
Altura:
21.1 mm
Longitud:
16.13 mm
Serie:
CoolMOS C7
Tipo de transistor:
1 N-Channel
Ancho:
5.21 mm
Marca:
Infineon Technologies
Otoño:
3.2 ns
Tipo de producto:
MOSFET
Hora de levantarse:
11 ns
Cantidad de paquete de fábrica:
240
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
81 ns
Tiempo típico de retardo de encendido:
18.5 ns
Parte # Alias:
IPW60R040C7 SP001296190
Unidad de peso:
1.340411 oz
Tags
IPW60R040, IPW60R04, IPW60R0, IPW60, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 40 mOhm 107 nC CoolMOS™ Power Mosfet - TO-247-3
***ark
Mosfet, N-Ch, 600V, 50A, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.034Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
Parte # Mfg. Descripción Valores Precio
IPW60R040C7XKSA1
DISTI # V99:2348_06377973		Infineon Technologies AGTrans MOSFET N-CH 600V 50A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		213
  • 240:$8.0290
  • 10:$9.3820
  • 1:$10.1310
IPW60R040C7XKSA1
DISTI # V36:1790_06377973		Infineon Technologies AGTrans MOSFET N-CH 600V 50A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
    IPW60R040C7XKSA1
    DISTI # IPW60R040C7XKSA1-ND    		Infineon Technologies AGMOSFET N-CH 600V 50A TO247-3
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		253In Stock
    • 1200:$8.3617
    • 720:$9.0294
    • 240:$10.4205
    • 10:$12.0900
    • 1:$13.2000
    IPW60R040C7XKSA1
    DISTI # 31924760    		Infineon Technologies AGTrans MOSFET N-CH 600V 50A 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant    		213
    • 240:$8.6312
    • 10:$10.0856
    • 1:$10.8908
    IPW60R040C7XKSA1
    DISTI # IPW60R040C7    		Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: IPW60R040C7)
    RoHS: Compliant
    Min Qty: 240    		Asia - 240
    • 240:$8.4308
    • 480:$8.1589
    • 720:$7.9039
    • 1200:$7.6644
    • 2400:$7.5500
    • 6000:$7.4390
    • 12000:$7.3312
    IPW60R040C7XKSA1
    DISTI # IPW60R040C7XKSA1    		Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Rail/Tube (Alt: IPW60R040C7XKSA1)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube    		Americas - 0
    • 240:$7.1900
    • 480:$6.9900
    • 960:$6.6900
    • 1440:$6.4900
    • 2400:$6.3900
    IPW60R040C7XKSA1
    DISTI # SP001296190    		Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: SP001296190)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1:€7.5900
    • 10:€6.9900
    • 25:€6.6900
    • 50:€6.3900
    • 100:€6.1900
    • 500:€5.9900
    • 1000:€5.5900
    IPW60R040C7XKSA1
    DISTI # 13AC9095    		Infineon Technologies AGMOSFET, N-CH, 600V, 50A, TO-247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.034ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes89
    • 500:$8.5400
    • 250:$9.0500
    • 100:$9.4500
    • 50:$10.0100
    • 25:$10.5600
    • 10:$10.9800
    • 1:$11.8300
    IPW60R040C7XKSA1
    DISTI # 726-IPW60R040C7XKSA1    		Infineon Technologies AGMOSFET HIGH POWER_NEW
    RoHS: Compliant    		463
    • 1:$10.6100
    • 10:$9.7600
    • 25:$9.3500
    • 100:$8.2400
    • 250:$7.8400
    • 500:$7.3300
    IPW60R040C7XKSA1
    DISTI # 1702279    		Infineon Technologies AGMOSFET N-CH 600V 50A COOLMOS C7 TO-247, TU145
    • 300:£6.0470
    • 150:£6.3310
    • 30:£7.4300
    IPW60R040C7XKSA1
    DISTI # IPW60R040C7XKSA1    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,600V,50A,227W,PG-TO247-328
    • 1:$18.5200
    • 3:$15.9900
    • 10:$12.7500
    • 25:$11.1100
    IPW60R040C7XKSA1
    DISTI # IPW60R040C7    		Infineon Technologies AGN-Ch 600V 50A 227W 0,04R TO247
    RoHS: Compliant    		0
    • 1:€10.7000
    • 10:€7.7000
    • 50:€6.2000
    • 100:€5.9100
    IPW60R040C7XKSA1
    DISTI # 2726076    		Infineon Technologies AGMOSFET, N-CH, 600V, 50A, TO-247-3
    RoHS: Compliant    		0
    • 240:$14.0500
    • 10:$16.5300
    • 1:$18.1800
    IPW60R040C7XKSA1
    DISTI # 2726076    		Infineon Technologies AGMOSFET, N-CH, 600V, 50A, TO-247-3
    RoHS: Compliant    		0
    • 100:£6.4800
    • 50:£6.9200
    • 10:£7.3500
    • 5:£8.3400
    • 1:£8.9300
    Imagen Parte # Descripción
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    OMO.#: OMO-STW72N60DM2AG

    		 MOSFET Automotive-grade N-channel 600 V, 0.037 Ohm typ., 66 A MDmesh DM2 Power MOSFET in a TO-247 package
    IPP410N30NAKSA1

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    Mfr.#: IPW65R041CFD

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    IDH20G65C6XKSA1

    Mfr.#: IDH20G65C6XKSA1

    OMO.#: OMO-IDH20G65C6XKSA1

    		 Schottky Diodes & Rectifiers SIC DIODES
    B32021A3472K000

    Mfr.#: B32021A3472K000

    OMO.#: OMO-B32021A3472K000

    		 Safety Capacitors .0047uF 10% 300Vac MKP Y2, LS 10MM
    OPA2333SHKQ

    Mfr.#: OPA2333SHKQ

    OMO.#: OMO-OPA2333SHKQ-TEXAS-INSTRUMENTS

    		 Operational Amplifiers - Op Amps High Temp 1.8V Micro Pwr CMOS Op Amp
    B32021A3472K000

    Mfr.#: B32021A3472K000

    OMO.#: OMO-B32021A3472K000-EPCOS

    		 Film Capacitors 4.7NF 10% 300V FILM CAP MKPY2
    IDH20G65C6XKSA1

    Mfr.#: IDH20G65C6XKSA1

    OMO.#: OMO-IDH20G65C6XKSA1-INFINEON-TECHNOLOGIES

    		 DIODE SCHOTTKY 650V 41A TO220-2
    Disponibilidad
    Valores:
    Available
    En orden:
    1984
    Ingrese la cantidad:
    El precio actual de IPW60R040C7XKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    10,61 US$
    10,61 US$
    10
    9,76 US$
    97,60 US$
    25
    9,35 US$
    233,75 US$
    100
    8,24 US$
    824,00 US$
    250
    7,84 US$
    1 960,00 US$
    500
    7,33 US$
    3 665,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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